A home-made electron source assisted medium-frequency （MF） magnetron sputter- ing system was used to deposit thick CrN films on silicon and tungsten carbide substrates at various nitrogen flow rates with a fixed tot...A home-made electron source assisted medium-frequency （MF） magnetron sputter- ing system was used to deposit thick CrN films on silicon and tungsten carbide substrates at various nitrogen flow rates with a fixed total pressure （0.3 Pa） and MF power （11.2 kW）. Result from scanning electron microscopy showed that the deposited CrN films have clear columnar struc- ture, and X-ray diffraction revealed a preferred orientation of CrN （200） for samples prepared at a rate of N2/（N2＋Ar） below 60%, whereas those prepared at higher N2/（N2＋Ar） rate are dom- inated by Cr2N. Deposition rates up to 12.5 μm/h were achieved and the hardness of the CrN coatings were in a range of 11 GPa to 18 GPa.展开更多
The nonuniform Yb-Er Codoped Al2O3 films were prepared on SiO2/Si substrates using a medium frequency magnetron sputtering system. Two asymmetry targets in the system were introduced to realize the nonuniform dopant. ...The nonuniform Yb-Er Codoped Al2O3 films were prepared on SiO2/Si substrates using a medium frequency magnetron sputtering system. Two asymmetry targets in the system were introduced to realize the nonuniform dopant. Some curves of Photoluminescence （PL） peak intensity were obtained by adjusting the deposition parameters, such as, the pillar number of erbium and ytterbium in the mixed target and the distance between a sample table and targets. Typically, the curve of PL peak intensity against the offset distance was approximately linear. The ratio of the PL intensity at the two ends of the same sample was 12.6 and the slope was 71.83/mm when the pillar numbers of the erbium and ytterbium in the mixed target are 5 and 60, respectively, and the distance between targets and the sample table is 2.9 cm.展开更多
基金supported by National Natural Science Foundation of China (No.10875090)the Ministry of Industry and Information Technology of China (No.2009ZX04012-032)
文摘A home-made electron source assisted medium-frequency （MF） magnetron sputter- ing system was used to deposit thick CrN films on silicon and tungsten carbide substrates at various nitrogen flow rates with a fixed total pressure （0.3 Pa） and MF power （11.2 kW）. Result from scanning electron microscopy showed that the deposited CrN films have clear columnar struc- ture, and X-ray diffraction revealed a preferred orientation of CrN （200） for samples prepared at a rate of N2/（N2＋Ar） below 60%, whereas those prepared at higher N2/（N2＋Ar） rate are dom- inated by Cr2N. Deposition rates up to 12.5 μm/h were achieved and the hardness of the CrN coatings were in a range of 11 GPa to 18 GPa.
基金Project supported by the National Natural Science Foundation of China (60477023)the Natural Science Foundation of Science and Tech-nology Commission of Liaoning Province (20062137)
文摘The nonuniform Yb-Er Codoped Al2O3 films were prepared on SiO2/Si substrates using a medium frequency magnetron sputtering system. Two asymmetry targets in the system were introduced to realize the nonuniform dopant. Some curves of Photoluminescence （PL） peak intensity were obtained by adjusting the deposition parameters, such as, the pillar number of erbium and ytterbium in the mixed target and the distance between a sample table and targets. Typically, the curve of PL peak intensity against the offset distance was approximately linear. The ratio of the PL intensity at the two ends of the same sample was 12.6 and the slope was 71.83/mm when the pillar numbers of the erbium and ytterbium in the mixed target are 5 and 60, respectively, and the distance between targets and the sample table is 2.9 cm.
