期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
Short-term Memory and Listening Comprehension 被引量:1
1
作者 Weina Ma 《Sino-US English Teaching》 2005年第5期69-72,81,共5页
More and more attention is paid to listening comprehension and learner factors nowadays, but less attention is paid to the effect of short-term memory. By analyzing the function and effect of short-term memory in the ... More and more attention is paid to listening comprehension and learner factors nowadays, but less attention is paid to the effect of short-term memory. By analyzing the function and effect of short-term memory in the process of information in the mind, this essay points out that short-term memory plays a vital role in listening comprehension, and puts forward three most effective ways to improve short-term memory retention. 展开更多
关键词 short-term memory listening comprehension information process
下载PDF
Physical informed memory networks for solving PDEs:implementation and applications
2
作者 Jiuyun Sun Huanhe Dong Yong Fang 《Communications in Theoretical Physics》 SCIE CAS CSCD 2024年第2期51-61,共11页
With the advent of physics informed neural networks(PINNs),deep learning has gained interest for solving nonlinear partial differential equations(PDEs)in recent years.In this paper,physics informed memory networks(PIM... With the advent of physics informed neural networks(PINNs),deep learning has gained interest for solving nonlinear partial differential equations(PDEs)in recent years.In this paper,physics informed memory networks(PIMNs)are proposed as a new approach to solving PDEs by using physical laws and dynamic behavior of PDEs.Unlike the fully connected structure of the PINNs,the PIMNs construct the long-term dependence of the dynamics behavior with the help of the long short-term memory network.Meanwhile,the PDEs residuals are approximated using difference schemes in the form of convolution filter,which avoids information loss at the neighborhood of the sampling points.Finally,the performance of the PIMNs is assessed by solving the Kd V equation and the nonlinear Schr?dinger equation,and the effects of difference schemes,boundary conditions,network structure and mesh size on the solutions are discussed.Experiments show that the PIMNs are insensitive to boundary conditions and have excellent solution accuracy even with only the initial conditions. 展开更多
关键词 nonlinear partial differential equations physics informed memory networks physics informed neural networks numerical solution
原文传递
Uncertainty relations based on skew information with quantum memory
3
作者 ZhiHao Ma ZhiHua Chen Shao-Ming Fei 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2017年第1期62-64,共3页
Uncertainty principle is one of the most fascinating features of the quantum world. It asserts a fundamental limit on the precision with which certain pairs of physical properties of a particle, such as position and m... Uncertainty principle is one of the most fascinating features of the quantum world. It asserts a fundamental limit on the precision with which certain pairs of physical properties of a particle, such as position and momentum, can not be si- multaneously known. The uncertainty principle has attracted considerable attention since the innovation of quantum me- chanics and has been investigated in terms of various types of uncertainty inequalities: in terms of the noise and dis- turbance, according to successive measurements, as informa- tional recourses in entropic terms, by means of majorization technique and based on sum of variances and standard devia- tions. 展开更多
关键词 Uncertainty relations based on skew information with quantum memory
原文传递
Design of power balance SRAM for DPA-resistance 被引量:1
4
作者 周可基 汪鹏君 温亮 《Journal of Semiconductors》 EI CAS CSCD 2016年第4期106-112,共7页
A power balance static random-access memory(SRAM) for resistance to differential power analysis(DPA) is proposed. In the proposed design, the switch power consumption and short-circuit power consumption are balanc... A power balance static random-access memory(SRAM) for resistance to differential power analysis(DPA) is proposed. In the proposed design, the switch power consumption and short-circuit power consumption are balanced by discharging and pre-charging the key nodes of the output circuit and adding an additional shortcircuit current path. Thus, the power consumption is constant in every read cycle. As a result, the DPA-resistant ability of the SRAM is improved. In 65 nm CMOS technology, the power balance SRAM is fully custom designed with a layout area of 5863.6 μm^2.The post-simulation results show that the normalized energy deviation(NED) and normalized standard deviation(NSD) are 0.099% and 0.04%, respectively. Compared to existing power balance circuits, the power balance ability of the proposed SRAM has improved 53%. 展开更多
关键词 differential power analysis(DPA) static random access memory(SRAM) power balance information security
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部