We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon dioxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain ...We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon dioxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain electrodes and the pentacene active layer.The threshold voltage decreased remarkably from ca.-20 V to a few volts(below-7.6 V) while the mobility increased 1.5-3 times after the insertion of the interlayer of only ca.2 nm,which could be attributed to the reduction of the carrier injection barrier.The results suggest a simple and effective way to achieve low-threshold-voltage pentacene-based organic thin film transistors with high mobility on silicon dioxide dielectric.展开更多
In history,semiconductor-metal-semiconductor transistor(SMST)was proposed for frequency improvement.However,a general fabrication method is still missing due to the unsolved technological problem of deposition of a ge...In history,semiconductor-metal-semiconductor transistor(SMST)was proposed for frequency improvement.However,a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal,and a thinner metal base is also difficult to be fabricated with high quality.Recently,due to the atomic thickness of graphene,the concept of semiconductor-graphene-semiconductor transistor(SGST)has emerged which leads to the renaissance of SMST,however the experimental study is in its infancy.In this letter,SMST and SGST are fabricated using Si membrane transfer.It is found the common base current gain can be improved from about 0.5%in a Si-Au-Si transistor to about 1%in a Si-Gr-Ge one,and to above 10%in a Si-Gr-Si one,which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene.展开更多
基金financially supported by the National Basic Research Program of China (973 Program) (Grant No. 2007CB936302)the National Natural Science Foundation of China (Grant No. 20833002)
文摘We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon dioxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain electrodes and the pentacene active layer.The threshold voltage decreased remarkably from ca.-20 V to a few volts(below-7.6 V) while the mobility increased 1.5-3 times after the insertion of the interlayer of only ca.2 nm,which could be attributed to the reduction of the carrier injection barrier.The results suggest a simple and effective way to achieve low-threshold-voltage pentacene-based organic thin film transistors with high mobility on silicon dioxide dielectric.
基金supported by National Natural Science Foundation of China(Nos.62074150,61704175)Chinese Academy of Sciences(SYNL Young Talent Project 2020,SKLA-2019-03,Project Young Merit Scholars)。
文摘In history,semiconductor-metal-semiconductor transistor(SMST)was proposed for frequency improvement.However,a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal,and a thinner metal base is also difficult to be fabricated with high quality.Recently,due to the atomic thickness of graphene,the concept of semiconductor-graphene-semiconductor transistor(SGST)has emerged which leads to the renaissance of SMST,however the experimental study is in its infancy.In this letter,SMST and SGST are fabricated using Si membrane transfer.It is found the common base current gain can be improved from about 0.5%in a Si-Au-Si transistor to about 1%in a Si-Gr-Ge one,and to above 10%in a Si-Gr-Si one,which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene.
