In recent years, semiconductor quantum dots （QDs） have been widely used as photon sources in quantum optics due to their special properties, such as high quantum effi- ciency, narrow and tunable emission spectrum, e...In recent years, semiconductor quantum dots （QDs） have been widely used as photon sources in quantum optics due to their special properties, such as high quantum effi- ciency, narrow and tunable emission spectrum, easy manipulation, and so on. The spontaneous emission of QDs also depends on the surrounding environment.展开更多
The transmitting light in GaN-based LED with 30 nm thickness metal film grating is investigated. We proposed a basic grating structure model to enhance light intensity in GaN material, which was simpler and cheaper. W...The transmitting light in GaN-based LED with 30 nm thickness metal film grating is investigated. We proposed a basic grating structure model to enhance light intensity in GaN material, which was simpler and cheaper. We calculated and analyzed the structure with different parameters, and studied the numerical simulation results of Ag-films/Al-films/Au-films. With a simple A1 or Ag basic grating structure, the 7.4-7.6 times intensity of 550 nm light can be obtained easily, and the enhancement efficiency is better than others.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11374289 and 61590932)the National Key R&D Program(No.2016YFA0301700)+2 种基金the Innovation Funds from the Chinese Academy of Sciences(No.60921091)the Fundamental Research Funds for the Central Universitiesthe Open Fund of the State Key Laboratory on Integrated Optoelectronics(No.IOSKL2015KF12)
文摘In recent years, semiconductor quantum dots （QDs） have been widely used as photon sources in quantum optics due to their special properties, such as high quantum effi- ciency, narrow and tunable emission spectrum, easy manipulation, and so on. The spontaneous emission of QDs also depends on the surrounding environment.
基金supported by the National Natural Science Foundation of China(No.60976070)
文摘The transmitting light in GaN-based LED with 30 nm thickness metal film grating is investigated. We proposed a basic grating structure model to enhance light intensity in GaN material, which was simpler and cheaper. We calculated and analyzed the structure with different parameters, and studied the numerical simulation results of Ag-films/Al-films/Au-films. With a simple A1 or Ag basic grating structure, the 7.4-7.6 times intensity of 550 nm light can be obtained easily, and the enhancement efficiency is better than others.
