This work adopts a multi⁃step etching⁃heat treatment strategy to prepare porous silicon microsphere com⁃posite with Sb⁃Sn surface modification and carbon coating(pSi/Sb⁃Sn@C),using industrial grade SiAl alloy micro⁃sp...This work adopts a multi⁃step etching⁃heat treatment strategy to prepare porous silicon microsphere com⁃posite with Sb⁃Sn surface modification and carbon coating(pSi/Sb⁃Sn@C),using industrial grade SiAl alloy micro⁃spheres as a precursor.pSi/Sb⁃Sn@C had a 3D structure with bimetallic(Sb⁃Sn)modified porous silicon micro⁃spheres(pSi/Sb⁃Sn)as the core and carbon coating as the shell.Carbon shells can improve the electronic conductivi⁃ty and mechanical stability of porous silicon microspheres,which is beneficial for obtaining a stable solid electrolyte interface(SEI)film.The 3D porous core promotes the diffusion of lithium ions,increases the intercalation/delithia⁃tion active sites,and buffers the volume expansion during the intercalation process.The introduction of active met⁃als(Sb⁃Sn)can improve the conductivity of the composite and contribute to a certain amount of lithium storage ca⁃pacity.Due to its unique composition and microstructure,pSi/Sb⁃Sn@C showed a reversible capacity of 1247.4 mAh·g^(-1) after 300 charge/discharge cycles at a current density of 1.0 A·g^(-1),demonstrating excellent rate lithium storage performance and enhanced electrochemical cycling stability.展开更多
We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film ...We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon （PS） layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy （FESEM）, X-ray diffractometer （XRD）, and high-resolution transmission electron microscopy （HRTEM）. Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.展开更多
Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various ir...Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.展开更多
The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiN...The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (I-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.展开更多
Flexible pressure sensors play an important role in the field of monitoring, owing to their inherent safety and the fact that they are embedded at the material level. Capacitive pressure sensors have been proven to be...Flexible pressure sensors play an important role in the field of monitoring, owing to their inherent safety and the fact that they are embedded at the material level. Capacitive pressure sensors have been proven to be quite versatile, with the ability to change the sensitivity and monitoring range by modifying the pore structure of the dielectric layer(elastic modulus). In this paper, capacitive pressure sensors are devised, comprising hierarchical porous polydimethylsiloxane. Due to the inherent hollow and hierarchical micropore structure, the capacitive pressure sensor allows operation at a wider pressure range(~1000 kPa) while maintaining sensitivity(6.33 MPa-1) in the range of 0–300 k Pa. Subsequently, the capacitance output model of the sensor is optimized, which provides an overall approximation of the experimental values for the sensor performance. Additionally, the signal response of the“break up the whole into parts”(by analysis of the whole sensor in parts) is simulated and outputted by the finite element analysis. The simplified analysis model provides a good understanding of the relationship between the local pressure and the signal response of the pressure sensor. For practical applications, seal monitoring and rubber wheel pressure array system are tested, and the proposed sensor shows sufficient potential for application in large deformation elastomer products.展开更多
The results of observation of different structuring techniques of thin metal layers applied in micro system technologies are presented. The Ti V getter films formed by magnetron sputtering have been explored using sca...The results of observation of different structuring techniques of thin metal layers applied in micro system technologies are presented. The Ti V getter films formed by magnetron sputtering have been explored using scanning electron and atomic-force microscopy, Brunauer-Emmett-Teller method, thermogravimetric analysis and fractal geometry. The film sorption capacity for hydrogen given by thermogravimetry was of 7.7 m3·Pa·g-1. To estimate the effective surface area, the fractal geometry tools were used and the calculated value of the specific surface area was about 155 m2/m3. The second object under investigation was a structure composed of micro- and mesoporous silicon and copper layer deposited electrochemically on the pore walls. Porous silicon when coupled with a reactive metal or alloy is expected to be an effective getter for micro system techniques. The use of porous silicon and specific conditions of depositions allows to form the structure of complex fractal type with a specific surface area of 167 m2/cm3.展开更多
A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less t...A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.展开更多
为了制备形貌良好性能优良的硅纳米线,利用金属辅助化学刻蚀法,在AgNO3和HF的混合水溶液中沉积Ag颗粒,使之作为刻蚀反应的催化剂,并在H2O2和HF的混合溶液中进行刻蚀反应制备硅纳米线.通过改变实验中的工艺参数,包括刻蚀反应时间、刻蚀...为了制备形貌良好性能优良的硅纳米线,利用金属辅助化学刻蚀法,在AgNO3和HF的混合水溶液中沉积Ag颗粒,使之作为刻蚀反应的催化剂,并在H2O2和HF的混合溶液中进行刻蚀反应制备硅纳米线.通过改变实验中的工艺参数,包括刻蚀反应时间、刻蚀反应温度、刻蚀液中HF浓度及反应过程中的搅拌速度,用扫描电子显微镜(scanning electron microscope,SEM)图像进行对比分析,讨论制备优良硅纳米线的最佳参数.结果表明:当刻蚀反应时间为1 h,反应温度在室温下,HF浓度为4.8 mol/L时,硅纳米线的表面形貌是最好的,但对刻蚀液的搅拌会严重破坏硅纳米线的表面形貌,不利于优良硅纳米线的制备.展开更多
利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效...利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效应(SCE)和漏感应势垒降低效应(DIBL);突起的源漏区增加了源漏区的厚度并减小源漏区的串联电阻,增强了器件的电流驱动能力。设计了101级环形振荡器电路,并对该电路进行测试与分析。根据在3V工作电压下环形振荡器电路的振荡波形图,计算出其单级门延迟时间为45ps,远小于体硅CMOS的单级门延迟时间。展开更多
文摘This work adopts a multi⁃step etching⁃heat treatment strategy to prepare porous silicon microsphere com⁃posite with Sb⁃Sn surface modification and carbon coating(pSi/Sb⁃Sn@C),using industrial grade SiAl alloy micro⁃spheres as a precursor.pSi/Sb⁃Sn@C had a 3D structure with bimetallic(Sb⁃Sn)modified porous silicon micro⁃spheres(pSi/Sb⁃Sn)as the core and carbon coating as the shell.Carbon shells can improve the electronic conductivi⁃ty and mechanical stability of porous silicon microspheres,which is beneficial for obtaining a stable solid electrolyte interface(SEI)film.The 3D porous core promotes the diffusion of lithium ions,increases the intercalation/delithia⁃tion active sites,and buffers the volume expansion during the intercalation process.The introduction of active met⁃als(Sb⁃Sn)can improve the conductivity of the composite and contribute to a certain amount of lithium storage ca⁃pacity.Due to its unique composition and microstructure,pSi/Sb⁃Sn@C showed a reversible capacity of 1247.4 mAh·g^(-1) after 300 charge/discharge cycles at a current density of 1.0 A·g^(-1),demonstrating excellent rate lithium storage performance and enhanced electrochemical cycling stability.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61271070,61274074,and 60771019)the Key Research Program of Application Foundation and Advanced Technology of Tianjin,China(Grant No.11JCZDJC15300)
文摘We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon （PS） layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy （FESEM）, X-ray diffractometer （XRD）, and high-resolution transmission electron microscopy （HRTEM）. Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.
文摘Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.
基金The authors thank Mr. Cao Guixun of Analysis and Testing Center of Gansu Province Cor usefulhelp and discussion. This work was supported by the National Natural Science Foundation of China (Grant Nos. 69890220 and 69871013).
文摘The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (I-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.
基金supported by the National Natural Science Foundation of China(Grant No.52075119)。
文摘Flexible pressure sensors play an important role in the field of monitoring, owing to their inherent safety and the fact that they are embedded at the material level. Capacitive pressure sensors have been proven to be quite versatile, with the ability to change the sensitivity and monitoring range by modifying the pore structure of the dielectric layer(elastic modulus). In this paper, capacitive pressure sensors are devised, comprising hierarchical porous polydimethylsiloxane. Due to the inherent hollow and hierarchical micropore structure, the capacitive pressure sensor allows operation at a wider pressure range(~1000 kPa) while maintaining sensitivity(6.33 MPa-1) in the range of 0–300 k Pa. Subsequently, the capacitance output model of the sensor is optimized, which provides an overall approximation of the experimental values for the sensor performance. Additionally, the signal response of the“break up the whole into parts”(by analysis of the whole sensor in parts) is simulated and outputted by the finite element analysis. The simplified analysis model provides a good understanding of the relationship between the local pressure and the signal response of the pressure sensor. For practical applications, seal monitoring and rubber wheel pressure array system are tested, and the proposed sensor shows sufficient potential for application in large deformation elastomer products.
文摘The results of observation of different structuring techniques of thin metal layers applied in micro system technologies are presented. The Ti V getter films formed by magnetron sputtering have been explored using scanning electron and atomic-force microscopy, Brunauer-Emmett-Teller method, thermogravimetric analysis and fractal geometry. The film sorption capacity for hydrogen given by thermogravimetry was of 7.7 m3·Pa·g-1. To estimate the effective surface area, the fractal geometry tools were used and the calculated value of the specific surface area was about 155 m2/m3. The second object under investigation was a structure composed of micro- and mesoporous silicon and copper layer deposited electrochemically on the pore walls. Porous silicon when coupled with a reactive metal or alloy is expected to be an effective getter for micro system techniques. The use of porous silicon and specific conditions of depositions allows to form the structure of complex fractal type with a specific surface area of 167 m2/cm3.
基金supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(No.KGCX2-YW-382)the National Program on Key Basic Research Project of China(No.2010CB933804)
文摘A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.
文摘为了制备形貌良好性能优良的硅纳米线,利用金属辅助化学刻蚀法,在AgNO3和HF的混合水溶液中沉积Ag颗粒,使之作为刻蚀反应的催化剂,并在H2O2和HF的混合溶液中进行刻蚀反应制备硅纳米线.通过改变实验中的工艺参数,包括刻蚀反应时间、刻蚀反应温度、刻蚀液中HF浓度及反应过程中的搅拌速度,用扫描电子显微镜(scanning electron microscope,SEM)图像进行对比分析,讨论制备优良硅纳米线的最佳参数.结果表明:当刻蚀反应时间为1 h,反应温度在室温下,HF浓度为4.8 mol/L时,硅纳米线的表面形貌是最好的,但对刻蚀液的搅拌会严重破坏硅纳米线的表面形貌,不利于优良硅纳米线的制备.
文摘利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效应(SCE)和漏感应势垒降低效应(DIBL);突起的源漏区增加了源漏区的厚度并减小源漏区的串联电阻,增强了器件的电流驱动能力。设计了101级环形振荡器电路,并对该电路进行测试与分析。根据在3V工作电压下环形振荡器电路的振荡波形图,计算出其单级门延迟时间为45ps,远小于体硅CMOS的单级门延迟时间。
