This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical ch...This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical characteristics by using current-voltage （Ⅰ - Ⅴ） measurements. An electronic model with two back to back Sehottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured Ⅰ - Ⅴ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.展开更多
A complete model of Metal-Semiconductor-Metal Photodetector(MSM-PD) is presented. It can be used in any circuit simulators. Simulated DC characteristics for a GaAs MSM-PD are in good agreement with reported results.
基金Project supported by the National Natural Science Foundation of China (Grant No 50575113)Program for NCET
文摘This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical characteristics by using current-voltage （Ⅰ - Ⅴ） measurements. An electronic model with two back to back Sehottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured Ⅰ - Ⅴ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.
文摘A complete model of Metal-Semiconductor-Metal Photodetector(MSM-PD) is presented. It can be used in any circuit simulators. Simulated DC characteristics for a GaAs MSM-PD are in good agreement with reported results.
