Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of...Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.展开更多
We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring t...We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality.展开更多
We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire ...We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.展开更多
The metal organic vapor phase epitaxy （MOVPE） growth of indium gallium nitride （InGaN） has been discussed in detail towards the fabrication of solar cell. The InGaN film with In contents up to 0.4 are successfully...The metal organic vapor phase epitaxy （MOVPE） growth of indium gallium nitride （InGaN） has been discussed in detail towards the fabrication of solar cell. The InGaN film with In contents up to 0.4 are successfully grown by controlling the fundamental growth parameters such as the precursor gas flow rates, temperature etc. The formation of metallic In originates from the higher value （0.74） of trimethylindium/ （trimethylindium ＋ triethylgallium） （TMI/（TMI ＋ TEG）） molar ratio with low （4100） V/lll weight molar ratio while the lower value （0.2） of TMI/（TMI ＋ TEG） causes the phase separation. It is also necessary to control the growth rate and epitaxial film thickness to suppress the phase separation in the material. The crystalline quality of grown films is studied and it is found to be markedly deteriorated with increasing In content. The lattice parameters as well as the thermal expansion coefficient mismatch between GaN template and InGaN epi-layer are primarily considered as the reasons to deteriorate the film quality for higher In content. By using Ino.16Ga0.84N films, an n＋-p homo-junction structure is fabricated on 0.65 μm GaN template. For such a device, the response to the light illumination （AM 1.5） is observed with an open circuit voltage of 1.4 V and the short circuit current density of 0.25 mA/cm2. To improve the performance as well as increase solar photon capturing, the device is further fabricated on thick GaN template with higher In content. The In0.25Ga0.75N n＋-p junction solar cell is found better performance with an open circuit voltage of 1.5 V and the short circuit current density of 0.5 mA/cm2. This is the InGaN p-n homo-junction solar cell with the highest In content ever reported by MOVPE.展开更多
Light management and electrical isolation are essential for the majority of optoelectronic nanowire （NW） devices. Here, we present a cost-effective technique, based on vapor-phase deposition of parylene-C and subseq...Light management and electrical isolation are essential for the majority of optoelectronic nanowire （NW） devices. Here, we present a cost-effective technique, based on vapor-phase deposition of parylene-C and subsequent annealing, that provides conformal encapsulation, anti-reflective coating, improved optical properties, and electrical insulation for GaAs nanowires. The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure. In particular, the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires, with reflectivity down to 〈1% in the visible spectrum. Furthermore, the parylene-C coating increases photoluminescence intensity, suggesting improved light guiding to the NWs. Finally, based on this process, a NW LED was fabricated, which showed good diode performance and a clear electroluminescence signal. We believe the process can expand the fabrication possibilities and improve the devices. performance of optoelectronic nanowire展开更多
Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol techn...Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostruetures for a variety of applications in semiconductor physics and device technology. Examples are given from： production of metal and metal alloy particles： semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area deviees based on aerosol particles.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61204006the Fundamental Research Funds for the Central Universities under Grant No 7214570101the National Key Science and Technology Special Project under Grant No 2008ZX01002-002
文摘Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400803 and 2016YFB0401801)the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,and 61574134)。
文摘We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality.
文摘We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.
文摘The metal organic vapor phase epitaxy （MOVPE） growth of indium gallium nitride （InGaN） has been discussed in detail towards the fabrication of solar cell. The InGaN film with In contents up to 0.4 are successfully grown by controlling the fundamental growth parameters such as the precursor gas flow rates, temperature etc. The formation of metallic In originates from the higher value （0.74） of trimethylindium/ （trimethylindium ＋ triethylgallium） （TMI/（TMI ＋ TEG）） molar ratio with low （4100） V/lll weight molar ratio while the lower value （0.2） of TMI/（TMI ＋ TEG） causes the phase separation. It is also necessary to control the growth rate and epitaxial film thickness to suppress the phase separation in the material. The crystalline quality of grown films is studied and it is found to be markedly deteriorated with increasing In content. The lattice parameters as well as the thermal expansion coefficient mismatch between GaN template and InGaN epi-layer are primarily considered as the reasons to deteriorate the film quality for higher In content. By using Ino.16Ga0.84N films, an n＋-p homo-junction structure is fabricated on 0.65 μm GaN template. For such a device, the response to the light illumination （AM 1.5） is observed with an open circuit voltage of 1.4 V and the short circuit current density of 0.25 mA/cm2. To improve the performance as well as increase solar photon capturing, the device is further fabricated on thick GaN template with higher In content. The In0.25Ga0.75N n＋-p junction solar cell is found better performance with an open circuit voltage of 1.5 V and the short circuit current density of 0.5 mA/cm2. This is the InGaN p-n homo-junction solar cell with the highest In content ever reported by MOVPE.
文摘Light management and electrical isolation are essential for the majority of optoelectronic nanowire （NW） devices. Here, we present a cost-effective technique, based on vapor-phase deposition of parylene-C and subsequent annealing, that provides conformal encapsulation, anti-reflective coating, improved optical properties, and electrical insulation for GaAs nanowires. The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure. In particular, the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires, with reflectivity down to 〈1% in the visible spectrum. Furthermore, the parylene-C coating increases photoluminescence intensity, suggesting improved light guiding to the NWs. Finally, based on this process, a NW LED was fabricated, which showed good diode performance and a clear electroluminescence signal. We believe the process can expand the fabrication possibilities and improve the devices. performance of optoelectronic nanowire
文摘Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostruetures for a variety of applications in semiconductor physics and device technology. Examples are given from： production of metal and metal alloy particles： semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area deviees based on aerosol particles.
