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Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process
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作者 陈山 潘天红 +1 位作者 李正明 郑西显 《Journal of Semiconductors》 EI CAS CSCD 2012年第6期118-124,共7页
This paper proposes to develop a data-driven via's depth estimator of the deep reactive ion etching process based on statistical identification of key variables.Several feature extraction algorithms are presented to ... This paper proposes to develop a data-driven via's depth estimator of the deep reactive ion etching process based on statistical identification of key variables.Several feature extraction algorithms are presented to reduce the high-dimensional data and effectively undertake the subsequent virtual metrology(VM) model building process.With the available on-line VM model,the model-based controller is hence readily applicable to improve the quality of a via's depth.Real operational data taken from a industrial manufacturing process are used to verify the effectiveness of the proposed method.The results demonstrate that the proposed method can decrease the MSE from 2.2×10^(-2) to 9×10^(-4) and has great potential in improving the existing DRIE process. 展开更多
关键词 deep reactive-ion etching virtual metrology through silicon via key variable analysis model-based control
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