This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external el...This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external electric field itself that drives the extrinsic spin-Hall effect in a nonmagnetic semiconductor （or metal）.By assuming that the impurity density is in a moderate range such that the total scattering potential due to all randomly distributed impurities is a smooth function of the space coordinate,it is shown that this dissipationless contribution shall be of the same orders of magnitude as the usual extrinsic contribution from spin-orbit dependent impurity scatterings （or may even be larger than the latter one）.The theoretical results obtained are in good agreement with recent relevant experimental results.展开更多
Spintronics is a new discipline focusing on the research and application of electronic spin properties. After the discovery of the giant magnetoresistance effect in 1988, spintronics has had a huge impact on scientifi...Spintronics is a new discipline focusing on the research and application of electronic spin properties. After the discovery of the giant magnetoresistance effect in 1988, spintronics has had a huge impact on scientific progress and related applications in the development of information technology. In recent decades, the main motivation in spintronics has been efficiently controlling local magnetization using electron flow or voltage rather than controlling the electron flow using magnetization. Using spin-orbit coupling in a material can convert a charge current into a pure spin current(a flow of spin momenta without a charge flow) and generate a spin-orbit torque on the adjacent ferromagnets. The ability of spintronic devices to utilize spin-orbit torques to manipulate the magnetization has resulted in large-scale developments such as magnetic random-access memories and has boosted the spintronic research area. Here in, we review the theoretical and experimental results that have established this subfield of spintronics. We introduce the concept of a pure spin current and spin-orbit torques within the experimental framework, and we review transport-, magnetization-dynamics-, and opticalbased measurements and link then to both phenomenological and microscopic theories of the effect. The focus is on the related progress reported from Chinese universities and institutes, and we specifically highlight the contributions made by Chinese researchers.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No 10874049)the State Key Program for Basic Research of China (Grant No 2007CB925204)the Natural Science Foundation of Guangdong Province of China (Grant No07005834)
文摘This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external electric field itself that drives the extrinsic spin-Hall effect in a nonmagnetic semiconductor （or metal）.By assuming that the impurity density is in a moderate range such that the total scattering potential due to all randomly distributed impurities is a smooth function of the space coordinate,it is shown that this dissipationless contribution shall be of the same orders of magnitude as the usual extrinsic contribution from spin-orbit dependent impurity scatterings （or may even be larger than the latter one）.The theoretical results obtained are in good agreement with recent relevant experimental results.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674142,51771099,11429401,and 51471081)the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT-16R35)
文摘Spintronics is a new discipline focusing on the research and application of electronic spin properties. After the discovery of the giant magnetoresistance effect in 1988, spintronics has had a huge impact on scientific progress and related applications in the development of information technology. In recent decades, the main motivation in spintronics has been efficiently controlling local magnetization using electron flow or voltage rather than controlling the electron flow using magnetization. Using spin-orbit coupling in a material can convert a charge current into a pure spin current(a flow of spin momenta without a charge flow) and generate a spin-orbit torque on the adjacent ferromagnets. The ability of spintronic devices to utilize spin-orbit torques to manipulate the magnetization has resulted in large-scale developments such as magnetic random-access memories and has boosted the spintronic research area. Here in, we review the theoretical and experimental results that have established this subfield of spintronics. We introduce the concept of a pure spin current and spin-orbit torques within the experimental framework, and we review transport-, magnetization-dynamics-, and opticalbased measurements and link then to both phenomenological and microscopic theories of the effect. The focus is on the related progress reported from Chinese universities and institutes, and we specifically highlight the contributions made by Chinese researchers.
