The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1 x 10(18) ions/cm(2). AES and XPS were used for the characterization of c...The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1 x 10(18) ions/cm(2). AES and XPS were used for the characterization of chemical bonding states of C and Si elements in SiC films as well as contamination oxygen before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand oxygen behaviors in the SiC films prepared with ion beam mixing. The results shou, that contamination oxygen can react with silicon to form silicon oxides, and more oxygen entered into the films during hydrogen ion irradiation. In addition, oxygen also reacts with carbon related hydrogen to form species including carbon, hydrogen and oxygen.展开更多
The oxidation behaviour of a fourth-generation single-crystal superalloy without coating and with two types of MCrAlY coatings at 1140℃was studied.The results showed that both coatings greatly improved the oxidation ...The oxidation behaviour of a fourth-generation single-crystal superalloy without coating and with two types of MCrAlY coatings at 1140℃was studied.The results showed that both coatings greatly improved the oxidation resistance of the superalloy,and the addition of Hf further improved the oxidation resistance by pinning the oxide layer into the coating.Before and after oxidation,obvious Cr and Al interdiffusion was detected.Inward Cr diffusion induces the precipitation of a topologically close-packed phase,while the diffusion of Al affects the structure of theγ/γ’phase,the solubility of refractory elements,and the formation of an interdiffusion zone.展开更多
文摘The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1 x 10(18) ions/cm(2). AES and XPS were used for the characterization of chemical bonding states of C and Si elements in SiC films as well as contamination oxygen before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand oxygen behaviors in the SiC films prepared with ion beam mixing. The results shou, that contamination oxygen can react with silicon to form silicon oxides, and more oxygen entered into the films during hydrogen ion irradiation. In addition, oxygen also reacts with carbon related hydrogen to form species including carbon, hydrogen and oxygen.
基金supported by the National Science and Technology Major Project under Grant No.2017-VI-0002-0072the National Key Research and Development Program of China under Grant No.2017YFA0700704+2 种基金the National Natural Science Foundation of China(NSFC)under Grant Nos.51671188 and 51771190the Youth Innovation Promotion Association,Chinese Academy of Sciences and Innovation Academy for Light-duty Gas TurbineChinese Academy of Sciences under Grant No.CXYJJ20-MS-03。
文摘The oxidation behaviour of a fourth-generation single-crystal superalloy without coating and with two types of MCrAlY coatings at 1140℃was studied.The results showed that both coatings greatly improved the oxidation resistance of the superalloy,and the addition of Hf further improved the oxidation resistance by pinning the oxide layer into the coating.Before and after oxidation,obvious Cr and Al interdiffusion was detected.Inward Cr diffusion induces the precipitation of a topologically close-packed phase,while the diffusion of Al affects the structure of theγ/γ’phase,the solubility of refractory elements,and the formation of an interdiffusion zone.
