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Memory characteristics of microcavity dielectric barrier discharge
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作者 Yanzhou Sun Xiaoqian Liu +1 位作者 Dati Su Huibin Yang 《Journal of Semiconductors》 EI CAS CSCD 2018年第11期62-67,共6页
The nonlinear resistance characteristics of microcavity dielectric barrier discharge are mainly studied in the paper. A simulation model of microcavity dielectric barrier discharge is herein built to study the relatio... The nonlinear resistance characteristics of microcavity dielectric barrier discharge are mainly studied in the paper. A simulation model of microcavity dielectric barrier discharge is herein built to study the relationship between voltage and current in the process of discharge, and thus its I–V characteristic curve can be obtained. The I–V characteristics of the memristor are analyzed and compared with the I–V characteristics of the dielectric barrier discharge; it can be found that the I–V characteristics of the microcavity dielectric barrier discharge are similar to the characteristics of the memristor by analyzing them. The memory characteristics of microcavity dielectric barrier discharge are further analyzed. 展开更多
关键词 microcavity dielectric barrier discharge MEMRISTOR I-V characteristic memory characteristics
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