The plasma parameters in ICP-CVD system with internal low inductance antennas(LIA) were diagnosed by Langmuir probe.The ions density(Ni) reached 10^(11)-10^(12) cm^(-3),and the electron temperature(T_e) was below ca.2...The plasma parameters in ICP-CVD system with internal low inductance antennas(LIA) were diagnosed by Langmuir probe.The ions density(Ni) reached 10^(11)-10^(12) cm^(-3),and the electron temperature(T_e) was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon(μc-Si:H) film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH_4:B_2H_6:H_2,a high quality μc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.展开更多
Hydrogenated microcrystalline silicon thin films (μc-Si:H) were deposited by plasma assistant magnetron sputtering in Ar-H 2 gas mixture. The effects of growth temperature from 150 to 450 C on properties of deposited...Hydrogenated microcrystalline silicon thin films (μc-Si:H) were deposited by plasma assistant magnetron sputtering in Ar-H 2 gas mixture. The effects of growth temperature from 150 to 450 C on properties of deposited Si films were investigated at two different hydrogen diluted gases with [H 2 ]/([Ar]+[H 2 ]) of 10% and 50% at 3 Pa. The crystallinity of Si films examined by Raman scattering exhibited higher degrada- tion by lowering growth temperature from 250 to 150 C in low hydrogen diluted gas of 10% than that in high hydrogen diluted gas of 50%. The IR absorption band around 845 and 890 cm 1 as well as calculated concentration of bonded hydrogen showed more obvious decrease of samples deposited in low hydrogen diluted gas of 10% than that in high hydrogen diluted gas of 50%. The optical band gasps of both groups of samples measured by ultraviolet-visible optical absorption were decreased with increasing temperature in both gas conditions.展开更多
基金supported by National Natural Science Foundation of China(Nos.11175024,11375031),2011BAD24B01,KM 201110015008,KM 201010015005,BIGC Key Project(No.23190113051)and PHR20110516,PHR201107145
文摘The plasma parameters in ICP-CVD system with internal low inductance antennas(LIA) were diagnosed by Langmuir probe.The ions density(Ni) reached 10^(11)-10^(12) cm^(-3),and the electron temperature(T_e) was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon(μc-Si:H) film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH_4:B_2H_6:H_2,a high quality μc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.
基金supported by the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (No. 707015)University Innovative Research Team Project of Liaoning Province
文摘Hydrogenated microcrystalline silicon thin films (μc-Si:H) were deposited by plasma assistant magnetron sputtering in Ar-H 2 gas mixture. The effects of growth temperature from 150 to 450 C on properties of deposited Si films were investigated at two different hydrogen diluted gases with [H 2 ]/([Ar]+[H 2 ]) of 10% and 50% at 3 Pa. The crystallinity of Si films examined by Raman scattering exhibited higher degrada- tion by lowering growth temperature from 250 to 150 C in low hydrogen diluted gas of 10% than that in high hydrogen diluted gas of 50%. The IR absorption band around 845 and 890 cm 1 as well as calculated concentration of bonded hydrogen showed more obvious decrease of samples deposited in low hydrogen diluted gas of 10% than that in high hydrogen diluted gas of 50%. The optical band gasps of both groups of samples measured by ultraviolet-visible optical absorption were decreased with increasing temperature in both gas conditions.
