On Line Anion Exchange Preconcentration in Microwave Plasma Torch Atomic Emission Spectrometry

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Edge effect during microwave plasma chemical vapor deposition diamond-film:Multiphysics simulation and experimental verification

This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.

DIAMOND FILMS DEPOSITED AT LOW TEMPERATURES MICROWAVE PLASMA-ASSISTED CVD METHOD

Low-temperature deposition of diamond thin films in the range of 280￣445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280￣445℃),the large increase in the nucleation density and great improvement in the average surfae roughness of the diamond were observed. Results of low temperature deposition and characterization of diamond thin films obtained are presented.

Studies on Excitation and Rotational Temperatures of an Oxygen-shielded Argon Microwave Plasma Torch Source

Excitation（ Texc ） and rotation（ Trot ） temperatures were determined under different conditions for an oxygen-shielded argon microwave plasmsa torch source（OS-Ar-MPT）. The Texc value, which was shown to be between 4300 and 5250 K under different operating conditions, was calculated from the slope of the Boltzmann plot with Fe as the thermometric species. The Trot value, which was in the range of 2100-2500 K, was measured with OH molecular spectra. The influences of microwave power, flow rates of the support gas, cartier gas, and shielding gas, as well as the observation height on Texc and Trot were investigated and discussed. The detailed results of Texc and Trot provided a better understanding of the performance of an OS-ArMPT as a source for atomic emission spectrometry.

Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film.

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition

Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition （MPCVD） in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope （FESEM） and Raman spectroscopy. These nano^carbon films are possessed of good field emission （FE） characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim （F-N） model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current （SCLC） effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.

On the Characteristics of Coaxial-Type Microwave Excited Linear Plasma:a Simple Numerical Analysis

To unveil the characteristics and available propagation mechanism of coaxial-type microwave excited line-shape plasma, the effects of parameters including microwave power, working pressure, dielectric constant, and external magnetic field on the plasma distribution were numerically investigated by solving a coupled system of Maxwell＇s equations and continuity equations. Numerical results indicate that high microwave power, relatively high working pressure, low dielectric constant, and shaped magnetic field profiles will help produce a high-density and uniform plasma source. Exciting both ends by microwave contributed to the high-density and uni- form plasma source as well. Possible mechanisms were analyzed by using the polarization model of low temperature plasma. The generation and propagation processes of the line-shape plasma mainly depend on the interaction of three aspects, i.e. the transmitted part, penetration part and absorptive part of the electromagnetic field. The numerical results were qualitatively consistent with available experimental results from literature. More elaborate descriptions of the three aspects and corresponding interactions among them need to be investigated further to improve the properties of the line-shape plasma.

Study of Spectral Character of Alkali Metals Using Microwave Plasma Torch Simultaneous Spectrometer

A microwave plasma torch （MPT） simultaneous spectrometer was used to study the spectral character and the matrix effect on alkali metal ions in solution. The main parameters were optimized. The microwave forward power was 100 W. The argon flow rate that was used to sustain the Ar-MPT included the flow rate of carrier gas and the flow rate of support gas, which were 0. 8 and 1.0 L/min, respectively. The HC1 concentration in the solution was 0.02 mol/L. The observation height was 9. 0 ram. The detection limits of Li, Na, K, Rb, and Cs were 0. 0003, 0. 0004, 0. 009, 0.07 and 2.4 mg/L, respectively, and the resuhs obtained by the Ar-MPT were compared with those obtained by argon inductively coupled plasma（Ar-ICP） and argon microwave induced plasma（Ar-MIP）. The interference effects of several matrix elements were also studied.

Preparation of Iron Nanoparticles from Iron Pentacarbonyl Using an Atmospheric Microwave Plasma

A novel method is introduced for preparing iron nanoparticles from iron pentacar- bonyl using an atmospheric microwave plasma. The prepared iron nanoparticles were characterized by transmission electron microscopy and X-ray diffraction. The results show that the size of the particles can be controlled by adjusting the microwave power and the flow rate of the carrier gas. The magnetic properties of the synthesized iron particles were studied and a saturation magnetiza- tion of ~95 emu/g was obtained. The convenient preparation process and considerable production rate were also found to be satisfactory for industrial applications.

Growth of 4＂ diameter polycrystailine diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition

Polycrystalline diamond（PCD） films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition（MPCVD） at different process parameters,and their thermal conductivity（TC） is evaluated by a laser flash technique（LFT） in the temperature range of230-380 K.The phase purity and quality of the films are assessed by micro-Raman spectroscopy based on the diamond Raman peak width and the amorphous carbon（a-C） presence in the spectra.Decreasing and increasing dependencies for TC with temperature are found for high and low quality samples,respectively.TC,as high as 1950 ± 230 W m-1 K-1 at room temperature,is measured for the most perfect material.A linear correlation between the TC at room temperature and the fraction of the diamond component in the Raman spectrum for the films is established.

Effect of N2 and O2 on OH radical production in an atmospheric helium microwave plasma jet

UV-pulsed laser cavity ringdown spectroscopy of the hydroxyl radical OH(A–X)(0–0)band in the wavelength range of 306–310 nm was employed to determine absolute number densities of OH in the atmospheric helium plasma jets generated by a 2.45 GHz microwave plasma source.The effect of the addition of molecular gases N2 and O2 to He plasma jets on OH generation was studied.Optical emission spectroscopy was simultaneously employed to monitor reactive plasma species.Stark broadening of the hydrogen Balmer emission line(Hβ)was used to estimate the electron density ne in the jets.For both He/N2 and He/O2 jets,ne was estimated to be on the order of 10^15 cm^?3.The effects of plasma power and gas flow rate were also studied.With increase in N2 and O2 flow rates,ne tended to decrease.Gas temperature in the He/O2 plasma jets was elevated compared to the temperatures in the pure He and He/N2 plasma jets.The highest OH densities in the He/N2 and He/O2 plasma jets were determined to be 1.0×10^16 molecules/cm^3 at x=4 mm(from the jet orifice)and 1.8×10^16 molecules/cm^3 at x=3 mm,respectively.Electron impact dissociation of water and water ion dissociative recombination were the dominant reaction pathways,respectively,for OH formation within the jet column and in the downstream and far downstream regions.The presence of strong emissions of the N2^+ bands in both He/N2 and He/O2 plasma jets,as against the absence of the N2^+ emissions in the Ar plasma jets,suggests that the Penning ionization process is a key reaction channel leading to the formation of N2^+ in these He plasma jets.

A Study on Microwave Induced Plasma Ionization Detector for Gas Chromatograph

Among various ionization detectors for gas chromatography(GC), the most promising one is perhaps the nonradioactive ionization detector which makes use of a microwave induced plasma(MIP). The use of MIP for gas chromatography was first studied by McCormack, et al. in 1965, Freeman developed a photoionization detector utilizing helium microwave discharge. In 1971, we developed a microwave

A New Atmospheric Pressure Microwave Plasma Source (APMPS)

An atmospheric pressure microwave plasma source （APMPS） that can generate a large volume of plasma at an atmospheric pressure has been developed at Tsinghua University. This paper presents the design of this APMPS, the theoretical consideration of microwave plasma ignition and the simulation results, including the distributions of the electric field and power density inside the cavity as well as the accuracy of the simulation results. In addition, a method of producing an atmospheric pressure microwave plasma and some relevant observations of the plasma are also provided. It is expected that this research would be useful for further developing atmospheric pressure microwave plasma sources and expanding the scope of their applications.

Quantitative Determination of Density of Ground State Atomic Oxygen from Both TALIF and Emission Spectroscopy in Hot Air Plasma Generated by Microwave Resonant Cavity

Two experimental techniques have been used to quantify the atomic oxygen density in the case of hot air plasma generated by a microwave （MW） resonant cavity. The latter operates at a frequency of 2.45 GHz inside a cell of gas conditioning at a pressure of 600 mbar, an injected air flow of 12 L/min and an input MW power of 1 kW. The first technique is based on the standard two photon absorption laser induced fluorescence （TALIF） using xenon for calibration but applied for the first time in the present post discharge hot air plasma column having a temperature of about 4500 K near the axis of the nozzle. The second diagnostic technique is an actinometry method based on optical emission spectroscopy （OES）. In this case, we compared the spectra intensities of a specific atomic oxygen line （844 nm） and the closest wavelength xenon line （823 nm）. The two lines need to be collected under absolutely the same spectroscopic parameters. The xenon emission is due to the addition of a small proportion of xenon （1% Xe） of this chemically inert gas inside the air while a further small quantity of H2 （2~） is also added in the mixture in order to collect OH（A- X） and NH（A-X） spectra without noise. The latter molecular spectra are required to estimate gas and excitation temperatures. Optical emission spectroscopy measurements, at for instance the position z=12 mm on the axis plasma column that leads to a gas measured temperature equal to 3500 K, an excitation temperature of about 9500 K and an atomic oxygen density 2.09× 1017＋ 0.2×1017 cm-3. This is in very good agreement with the TALIF measurement, which is equal to 2.0×101T cm-3.

Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature

Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synthesized process is simple, low-cost and possible for application on transparent electrodes, gas sensors and thin film resistors. Analytical methods such as Raman spectroscopy, transmission electron microscopy (TEM) and four points prove resistivity measurement and UV-VIS-NIR spectroscopy were employed to characterize properties of the graphene films. The formation of multilayer of graphene on silicon substrate was confirmed by Raman spectroscopy and TEM. It is possible to grow graphene directly on silicon substrate (without using catalyst) due to high radical density of MW SWP CVD. In addition, we also observed that the hydrogen had significant role for quality of graphene.

Determinations of plasma density and decay time in the hollow cathode discharge by microwave transmission

The microwave （MW） transmission method is employed to measure both the plasma density and the plasma decay time in the hollow cathode discharge （HCD） in argon at low pressure. The plasma density in DC-driven or pulsed HCD is on the order of 1012 cm-3, which can block the X-band MW effectively. In the case of pulsed HCD, the MW transmittance shows the same waveform as the pulsed current during the rising edge if the driving frequency is low, but with a longer delay during the falling edge. The MW transmittance reaches a constant low level when the driving frequency is high enough. The plasma decay time in the HCD system is measured to be about 100 μs around a pressure of 120 Pa. The ambipolar diffusion is considered to be the major mechanism in the decay process.

An investigation on improving the homogeneity of plasma generated by linear microwave plasma source with a length of 1550 mm

To develop a larger in-line plasma enhanced chemical vapor deposition(PECVD)device,the length of the linear microwave plasma source needs to be increased to 1550 mm.This paper proposes a solution to the problem of plasma inhomogeneity caused by increasing device length.Based on the COMSOL Multiphysics,a multi-physics field coupling model for in-line PECVD device is developed and validated.The effects of microwave power,chamber pressure,and magnetic flux density on the plasma distribution are investigated,respectively,and their corresponding optimized values are obtained.This paper also presents a new strategy to optimize the wafer position to achieve the balance between deposition rate and film quality.Numerical results have indicated that increasing microwave power and magnetic flux density or decreasing chamber pressure all play positive roles in improving plasma homogeneity,and among them,the microwave power is the most decisive influencing factor.It is found that the plasma homogeneity is optimal under the condition of microwave power at 2000 W,chamber pressure at 15 Pa,and magnetic field strength at 45 mT.The relative deviation is within−3.7%to 3.9%,which fully satisfies the process requirements of the equipment.The best position for the wafer is 88 mm from the copper antenna.The results are very valuable for improving the quality of the in-line PECVD device.

Reduction of Ilmenite Through Microwave Plasma

Ilmenite was reduced through microwave plasma-assisted chemical vapor deposition with continuously flowing hydrogen and methane gas. The reduction products were analyzed by XRD and SEM technology, and the component products were TiO 2 -Carbon Nanotubes （CNTs） composite powders. The reduction process was in good agreement with the Jander equation. Compared with other reduction process by kinetics analysis, microwave plasma could significantly facilitate the reduction process at low temperature.

EVALUATON OF MICROWAVE PLASMA TORCH FOR ATOMIC FLUORESCENCE SPECTROMETRY WITH AN ULTRASONIC NEBULIZATION SAMPLE INTRODUCTION SYSTEM

In this paper, a new MPT(microwave plasma torch) device has been used as a atomizer for atomic fluorescence spectrometry. Spme elements, such as Zn, Cd, Hg, Pb, As, Co, Mg, Cu, Ag, Mn, Fe have been investigated in detail.