Broadband,low-drive voltage electro-optic modulators are crucial optoelectronic components in the new-generation microwave photonic links and broadband optical interconnect network applications.In this paper,we fabric...Broadband,low-drive voltage electro-optic modulators are crucial optoelectronic components in the new-generation microwave photonic links and broadband optical interconnect network applications.In this paper,we fabricate a low-loss thinfilm lithium niobate complementary dual-output electro-optic modulator chip with a 3 dB electro-optic bandwidth of 59 GHz and a half-wave voltage(Vπ)of 2.5 V.The insert-loss of the packaged modulator is 4.2 dB after coupling with polarizationmaintaining fiber.The complementary dual-output modulator also shows a common-mode rejection ratio of 18 dB and a signal enhancement of 6.2 dB when adapted in microwave photonic links,comparable to commercial bulk lithium niobate devices.展开更多
基金supported by the National Key Research and Development Program of China(No.2021YFB2800104)the National Natural Science Foundation of China(Nos.62175079 and 62205119).
文摘Broadband,low-drive voltage electro-optic modulators are crucial optoelectronic components in the new-generation microwave photonic links and broadband optical interconnect network applications.In this paper,we fabricate a low-loss thinfilm lithium niobate complementary dual-output electro-optic modulator chip with a 3 dB electro-optic bandwidth of 59 GHz and a half-wave voltage(Vπ)of 2.5 V.The insert-loss of the packaged modulator is 4.2 dB after coupling with polarizationmaintaining fiber.The complementary dual-output modulator also shows a common-mode rejection ratio of 18 dB and a signal enhancement of 6.2 dB when adapted in microwave photonic links,comparable to commercial bulk lithium niobate devices.
