This paper presents a brief overview of CO2 reforming of CH4 （CRM） by various forms of ＂arc＂ plasma, which is more suitable to CRM, and the energy efficiency is used to evaluate different plasma processes specific...This paper presents a brief overview of CO2 reforming of CH4 （CRM） by various forms of ＂arc＂ plasma, which is more suitable to CRM, and the energy efficiency is used to evaluate different plasma processes specifically. According to the reported results, the arc thermal plasma with binode exhibited better performance. Moreover, the plasma CRM process was compared with the reported plasma steam reforming of CH4 （SRM） process, and the results showed that the former process has advantages on energy efficiency and CH4 consumption. Additionally, it is believed that the plasma CRM process would be competitive with the conventional SRM process in both energy efficiency and CO2 emission once the heat management is emphasized and the renewable power is used. Finally, a concept of plasma reactor for industrial application is proposed.展开更多
Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synt...Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synthesized process is simple, low-cost and possible for application on transparent electrodes, gas sensors and thin film resistors. Analytical methods such as Raman spectroscopy, transmission electron microscopy (TEM) and four points prove resistivity measurement and UV-VIS-NIR spectroscopy were employed to characterize properties of the graphene films. The formation of multilayer of graphene on silicon substrate was confirmed by Raman spectroscopy and TEM. It is possible to grow graphene directly on silicon substrate (without using catalyst) due to high radical density of MW SWP CVD. In addition, we also observed that the hydrogen had significant role for quality of graphene.展开更多
在带有输送煤样的管式反应器上进行了霍林河褐煤加压快速氢解实验,分析了H2对煤/半焦的化学键断裂和对CH4生成规律的影响。在加压快速氢解条件下,CH4产率随着热解温度升高、压力的增大而增大;在50%H2气氛下,操作压力为1.0 M Pa、温度为...在带有输送煤样的管式反应器上进行了霍林河褐煤加压快速氢解实验,分析了H2对煤/半焦的化学键断裂和对CH4生成规律的影响。在加压快速氢解条件下,CH4产率随着热解温度升高、压力的增大而增大;在50%H2气氛下,操作压力为1.0 M Pa、温度为900℃时,CH4产率为8.08%,达到最大,较N2气氛下的提高了72.5%。H2或H·自由基诱发了芳环的开裂、侧链、脂肪链和醚键的断裂,促进了煤热解。CH4产率的增加主要是由于外部供H的结果;热解温度低于700℃时,H2对煤结构中活性基团的作用促进了煤热解,导致了CH4产率的增加;而热解温度高于700℃后,煤/半焦加氢气化促进了CH4产率的增加。展开更多
In a novel plasma-shade reactor for oxidative reforming of biogas(CH4/CO2=3/2),the effects of specific-energy-input (SEI) on CH4 and CO2 conversions and energy cost of syngas were investigated at O2/CH4ratios ranged f...In a novel plasma-shade reactor for oxidative reforming of biogas(CH4/CO2=3/2),the effects of specific-energy-input (SEI) on CH4 and CO2 conversions and energy cost of syngas were investigated at O2/CH4ratios ranged from 0.42 to 0.67.At each of O2/CH4 ratios,V-shape profiles of energy cost of syngas increasing with SEI were observed,reaching the lowest value at the optimal SEI(Opt-SEI).With the increase of O2/CH4 ratio,the Opt-SEI decreased significantly.Moreover,at the Opt-SEI,O2 and CH4 conversions and dry-basis concentration of syngas increased and energy cost of syngas decreased greatly with the increase of O2/CH4 ratio.展开更多
A novel three dimensional fluorinated gallium phosphate has been hydrothermally synthesized by using diethylenetriamine as an organic structure directing agent. X ray single crystal structure analysis indicates this c...A novel three dimensional fluorinated gallium phosphate has been hydrothermally synthesized by using diethylenetriamine as an organic structure directing agent. X ray single crystal structure analysis indicates this compound crystallizes in the orthorhombic space group Pbca, a =1.605 6(7) nm, b = 1 011 4 (4) nm, c =1.854 6(5) nm, V =3.011 6(19) nm 3, Z =4. The three dimensional framework based on linkage of corner sharing polyhedron PO 4, GaO 4F and GaO 4F 2 delimit ten ring channels along b axis in which the triply protonated amines are located serving as charge compensating guests and supporters.展开更多
基金supported by National Natural Science Foundation of China(No.11375123)the Research Project of Xuzhou Institute of Technology,China(No.XKY2015308)
文摘This paper presents a brief overview of CO2 reforming of CH4 （CRM） by various forms of ＂arc＂ plasma, which is more suitable to CRM, and the energy efficiency is used to evaluate different plasma processes specifically. According to the reported results, the arc thermal plasma with binode exhibited better performance. Moreover, the plasma CRM process was compared with the reported plasma steam reforming of CH4 （SRM） process, and the results showed that the former process has advantages on energy efficiency and CH4 consumption. Additionally, it is believed that the plasma CRM process would be competitive with the conventional SRM process in both energy efficiency and CO2 emission once the heat management is emphasized and the renewable power is used. Finally, a concept of plasma reactor for industrial application is proposed.
文摘Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synthesized process is simple, low-cost and possible for application on transparent electrodes, gas sensors and thin film resistors. Analytical methods such as Raman spectroscopy, transmission electron microscopy (TEM) and four points prove resistivity measurement and UV-VIS-NIR spectroscopy were employed to characterize properties of the graphene films. The formation of multilayer of graphene on silicon substrate was confirmed by Raman spectroscopy and TEM. It is possible to grow graphene directly on silicon substrate (without using catalyst) due to high radical density of MW SWP CVD. In addition, we also observed that the hydrogen had significant role for quality of graphene.
文摘在带有输送煤样的管式反应器上进行了霍林河褐煤加压快速氢解实验,分析了H2对煤/半焦的化学键断裂和对CH4生成规律的影响。在加压快速氢解条件下,CH4产率随着热解温度升高、压力的增大而增大;在50%H2气氛下,操作压力为1.0 M Pa、温度为900℃时,CH4产率为8.08%,达到最大,较N2气氛下的提高了72.5%。H2或H·自由基诱发了芳环的开裂、侧链、脂肪链和醚键的断裂,促进了煤热解。CH4产率的增加主要是由于外部供H的结果;热解温度低于700℃时,H2对煤结构中活性基团的作用促进了煤热解,导致了CH4产率的增加;而热解温度高于700℃后,煤/半焦加氢气化促进了CH4产率的增加。
基金supported by International Science&Technology Cooperation Program of China (2013DFG60060)
文摘In a novel plasma-shade reactor for oxidative reforming of biogas(CH4/CO2=3/2),the effects of specific-energy-input (SEI) on CH4 and CO2 conversions and energy cost of syngas were investigated at O2/CH4ratios ranged from 0.42 to 0.67.At each of O2/CH4 ratios,V-shape profiles of energy cost of syngas increasing with SEI were observed,reaching the lowest value at the optimal SEI(Opt-SEI).With the increase of O2/CH4 ratio,the Opt-SEI decreased significantly.Moreover,at the Opt-SEI,O2 and CH4 conversions and dry-basis concentration of syngas increased and energy cost of syngas decreased greatly with the increase of O2/CH4 ratio.
文摘A novel three dimensional fluorinated gallium phosphate has been hydrothermally synthesized by using diethylenetriamine as an organic structure directing agent. X ray single crystal structure analysis indicates this compound crystallizes in the orthorhombic space group Pbca, a =1.605 6(7) nm, b = 1 011 4 (4) nm, c =1.854 6(5) nm, V =3.011 6(19) nm 3, Z =4. The three dimensional framework based on linkage of corner sharing polyhedron PO 4, GaO 4F and GaO 4F 2 delimit ten ring channels along b axis in which the triply protonated amines are located serving as charge compensating guests and supporters.
