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SiGe HBT Class AB Power Amplifier for Wireless Communications 被引量:1
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作者 贾宏勇 刘志农 +1 位作者 李高庆 钱佩信 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第9期921-924,共4页
Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point (... Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification. 展开更多
关键词 SIGE HBT microwave power amplifier
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