A novel efficient circuit for Ultra-WideBand(UWB) balanced sub-nanosecond monocycle pulse generation is presented.The pulse generator employs wideband bipolar transistor,step recovery diodes,Schottky diodes,and simple...A novel efficient circuit for Ultra-WideBand(UWB) balanced sub-nanosecond monocycle pulse generation is presented.The pulse generator employs wideband bipolar transistor,step recovery diodes,Schottky diodes,and simple charging and discharging circuitry.Simple transient analysis and design of the circuit are presented along with their operating principle.The pulse generator produces truly balanced monocycle pulse with 500 ps pulse-width and 800 mV peak voltage.The generated monocycle pulse also has very symmetrical positive and negative portions and low ringing level.The presented pulse generator can be used as both a transmitter feeding UWB balanced antennas without broadband baluns and a balanced switching pulse generator that used in UWB receiver.展开更多
An lnGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process. From the stability factor K, the device shows unconditional stability in a wi...An lnGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process. From the stability factor K, the device shows unconditional stability in a wide frequency range due to the RC network. The power characteristics of the device as measured by a loadpull system show that the large-signal performance of the power transistor is affected slightly by the RC network. Psat is 30dBm at 5.4GHz,and PldB is larger than 21.6dBm at llGHz. The stability of the device due to RC network is proved by a power combination circuit. This makes the power transistor very suitable for applications in microwavc high power ttBT amplifiers.展开更多
The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and...The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.展开更多
文摘A novel efficient circuit for Ultra-WideBand(UWB) balanced sub-nanosecond monocycle pulse generation is presented.The pulse generator employs wideband bipolar transistor,step recovery diodes,Schottky diodes,and simple charging and discharging circuitry.Simple transient analysis and design of the circuit are presented along with their operating principle.The pulse generator produces truly balanced monocycle pulse with 500 ps pulse-width and 800 mV peak voltage.The generated monocycle pulse also has very symmetrical positive and negative portions and low ringing level.The presented pulse generator can be used as both a transmitter feeding UWB balanced antennas without broadband baluns and a balanced switching pulse generator that used in UWB receiver.
文摘An lnGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process. From the stability factor K, the device shows unconditional stability in a wide frequency range due to the RC network. The power characteristics of the device as measured by a loadpull system show that the large-signal performance of the power transistor is affected slightly by the RC network. Psat is 30dBm at 5.4GHz,and PldB is larger than 21.6dBm at llGHz. The stability of the device due to RC network is proved by a power combination circuit. This makes the power transistor very suitable for applications in microwavc high power ttBT amplifiers.
文摘The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.
