The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetro...The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. The recent developments of unbalanced magnetron systems and their incorporation with ion sources result in an understanding in growingimportance of the magnetron sputtering technology, which makes the technology an applicable deposition process for a variety of important films, such as wear-resistant films and decorative films.展开更多
Al-doped zinc oxide（AZO） films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target-substrate distance on the electrical, optical properties an...Al-doped zinc oxide（AZO） films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target-substrate distance on the electrical, optical properties and microstructure and crystal structures of the resulting films were investigated by scanning electron microscopy（SEM）, atomic force microscopy（AFM）, X-ray diffraction（XRD）, spectrophotometer and Hall-effect measurement system, respectively. XRD results show that all AZO films exhibit a strong preferred c-axis orientation. However, the crystallinity of films decreases with the increase of substrate rotation speed, accompanying with the unbalanced grains grows. For the films prepared at different target-substrate distances, the uniform microstructure and morphology are observed. The highest carrier concentration of 5.9×1020 cm-3 and Hall mobility of 13.1 cm^2/（V·s） are obtained at substrate rotation speed of 0 and target-substrate distance of 7 cm. The results indicate that the structure and performances of the AZO films are strongly affected by substrate rotation speed.展开更多
Al-doped zinc oxide （ZnO：Al,AZO） films were deposited on glass substrates using a reactive mid-frequency （MF） magnetron sputtering process with rotating cathodes.The influence of deposition parameters on structur...Al-doped zinc oxide （ZnO：Al,AZO） films were deposited on glass substrates using a reactive mid-frequency （MF） magnetron sputtering process with rotating cathodes.The influence of deposition parameters on structural,electrical and optical properties of AZO films is investigated.It is observed that the rotating magnetron targets exhibited a sputtered metallic surface over a wider range,and there is no re-deposition zone between the racetracks.The films deposited at static deposition mode demonstrate more homogenous in thickness and resistivity across the target surface compared with conventional rectangular targets.The films deposited under the proper conditions show a regular cone-shaped grain surface and densely packed columnar structure.The minimum resistivity of 3.16×10-4 ·cm was obtained for the film prepared at substrate temperature of 150 C,gas pressure of 640 MPa and oxygen partial pressure of 34 MPa.展开更多
基金supported by the National Natural Science Foundation of China (No. 50475057)the Tribology Science Fund of the State Key-laboratory of Tribology (No. Kf04.02)
文摘The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. The recent developments of unbalanced magnetron systems and their incorporation with ion sources result in an understanding in growingimportance of the magnetron sputtering technology, which makes the technology an applicable deposition process for a variety of important films, such as wear-resistant films and decorative films.
基金Project(51302044)supported by the National Natural Science Foundation of ChinaProject(2012M521596)supported by the Chinese Postdoctoral Science FoundationProject(KLB11003)supported by the Key Laboratory of Clean Energy Materials of Guangdong Higher Education Institute,China
文摘Al-doped zinc oxide（AZO） films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target-substrate distance on the electrical, optical properties and microstructure and crystal structures of the resulting films were investigated by scanning electron microscopy（SEM）, atomic force microscopy（AFM）, X-ray diffraction（XRD）, spectrophotometer and Hall-effect measurement system, respectively. XRD results show that all AZO films exhibit a strong preferred c-axis orientation. However, the crystallinity of films decreases with the increase of substrate rotation speed, accompanying with the unbalanced grains grows. For the films prepared at different target-substrate distances, the uniform microstructure and morphology are observed. The highest carrier concentration of 5.9×1020 cm-3 and Hall mobility of 13.1 cm^2/（V·s） are obtained at substrate rotation speed of 0 and target-substrate distance of 7 cm. The results indicate that the structure and performances of the AZO films are strongly affected by substrate rotation speed.
文摘Al-doped zinc oxide （ZnO：Al,AZO） films were deposited on glass substrates using a reactive mid-frequency （MF） magnetron sputtering process with rotating cathodes.The influence of deposition parameters on structural,electrical and optical properties of AZO films is investigated.It is observed that the rotating magnetron targets exhibited a sputtered metallic surface over a wider range,and there is no re-deposition zone between the racetracks.The films deposited at static deposition mode demonstrate more homogenous in thickness and resistivity across the target surface compared with conventional rectangular targets.The films deposited under the proper conditions show a regular cone-shaped grain surface and densely packed columnar structure.The minimum resistivity of 3.16×10-4 ·cm was obtained for the film prepared at substrate temperature of 150 C,gas pressure of 640 MPa and oxygen partial pressure of 34 MPa.
