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Multifunctional hopeite nanocoating on Ti64 substrates by pulsed laser deposition and radio frequency magnetron sputtering for orthopedic implant applications:A comparative study 被引量:3
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作者 Ashish DAS Mukul SHUKLA 《Journal of Central South University》 SCIE EI CAS CSCD 2020年第8期2198-2209,共12页
Functionalized implants demonstrate an upgraded approach in orthopedic implants,aiming to achieve long term success through improved bio integration.Bioceramic coatings with multifunctionality have arisen as an effect... Functionalized implants demonstrate an upgraded approach in orthopedic implants,aiming to achieve long term success through improved bio integration.Bioceramic coatings with multifunctionality have arisen as an effective substitute for conventional coatings,owing to their combination of various properties that are essential for bio-implants,such as osteointegration and antibacterial character.In the present study,thin hopeite coatings were produced by Pulsed laser deposition(PLD)and radio frequency magnetron sputtering(RFMS)on Ti64 substrates.The obtained hopeite coatings were annealed at 500°C in ambient air and studied in terms of surface morphology,phase composition,surface roughness,adhesion strength,antibacterial efficacy,apatite forming ability,and surface wettability by scanning electron microscope(SEM),X-ray diffraction(XRD),atomic force microscope(AFM),tensometer,fluorescence-activated cell sorting(FACS),simulated body fluid(SBF)immersion test and contact angle goniometer,respectively.Furthermore,based on promising results obtained in the present work it can be summarized that the new generation multifunctional hopeite coating synthesized by two alternative new process routes of PLD and RFMS on Ti64 substrates,provides effective alternatives to conventional coatings,largely attributed to strong osteointegration and antibacterial character of deposited hopeite coating ensuring the overall stability of metallic orthopedic implants. 展开更多
关键词 hopeite Ti64 alloy pulsed laser deposition magnetron sputtering coating IMPLANT
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Simulation of Discharge Plasma in Mid-frequency Pulsed DC Magnetron
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作者 QIU Qingquan QU Fei GU Hongwei ZHANG Guomin DAI Shaotao 《高电压技术》 EI CAS CSCD 北大核心 2013年第10期2526-2531,共6页
关键词 放电等离子体 脉冲磁控溅射 脉冲直流 模拟系统 中频 等离子体性能 粒子模型 等离子体密度
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Preparation of Thin Films by a Bipolar Pulsed-DC Magnetron Sputtering System Using Ca<sub>3</sub>Co<sub>4</sub>O<sub>9</sub>and CaMnO<sub>3</sub>Targets
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作者 Weerasak Somkhunthot Nuwat Pimpabute Tosawat Seetawan 《Materials Sciences and Applications》 2012年第9期645-649,共5页
The thin films were deposited on the glass substrates by an asymmetric bipolar pulsed-dc magnetron sputtering system using the Ca3Co4O9 and CaMnO3 Targets (n-type) targets of 60 mm diameter and 2.5 mm thickness. The t... The thin films were deposited on the glass substrates by an asymmetric bipolar pulsed-dc magnetron sputtering system using the Ca3Co4O9 and CaMnO3 Targets (n-type) targets of 60 mm diameter and 2.5 mm thickness. The targets were prepared from powder precursors, which obtained by a solid state reaction. Optical emissions from plasmas during sputter depositions of films were detected using a high resolution spectrometer. Thickness of thin film was estimated by Tolansky’s Fizeau fringe method and ellipsometic measurement. Crystal structures were studied from X-ray diffraction. The thermoelectric properties were assessed from Seebeck coefficient and electrical resistivity measurements at room temperature. The power factors were calculated. It was found that the optical emission spectrums showed that the Ca, Mn, Co and O atoms were sputtered from the targets onto glass substrates. As-deposited Ca-Co-O and Ca-Mn-O films thickness values were 0.435 ?m and 0.449 ?m, respectively. The X-ray diffraction patterns clearly showed amorphous nature of the as-deposited films. Determining thermoelectric properties of Ca-Co-O film gave Seebeck coefficient of 0.146 mV/K, electrical resistivity of 0.473Ω.cm, and power factor of 4.531 μW/m?K at room temperature. Ca-Mn-O film baring a high resistance was not the experimental determination of thermoelectric properties. 展开更多
关键词 Thermoelectric Thin Film CA3CO4O9 CaMnO3 Bipolar pulsed-DC magnetron sputtering SYSTEM
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Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering 被引量:12
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作者 Min Su KANG Tie-gang WANG +2 位作者 Jung Ho SHIN Roman NOWAK Kwang Ho KIM 《中国有色金属学会会刊:英文版》 CSCD 2012年第S3期729-734,共6页
The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under... The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C. 展开更多
关键词 Cr-Al-Si-N film high power IMpulsE magnetron sputtering DC pulsed sputtering high-temperature oxidation resistance
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Influences of working pressure on properties for TiO_2 films deposited by DC pulse magnetron sputtering 被引量:11
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作者 ZHANG Can DING Wanyu +2 位作者 WANG Hualin CHAI Weiping JU Dongying 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2009年第6期741-744,共4页
TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-r... TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction(XRD),atomic force microscopy(AFM) and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in?uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase(anatase) could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum(35%) after irradiation by ultraviolet light for 1 h. 展开更多
关键词 TiO2 film ANATASE UV induced photocatalysis DC pulse magnetron sputtering
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Recent Developments in Magnetron Sputtering 被引量:1
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作者 于翔 王成彪 +2 位作者 刘阳 于德洋 邢廷炎 《Plasma Science and Technology》 SCIE EI CAS CSCD 2006年第3期337-343,共7页
The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetro... The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. The recent developments of unbalanced magnetron systems and their incorporation with ion sources result in an understanding in growingimportance of the magnetron sputtering technology, which makes the technology an applicable deposition process for a variety of important films, such as wear-resistant films and decorative films. 展开更多
关键词 balanced and unbalanced magnetron sputtering mid-frequency magnetron sputtering ion assisted sputtering
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Effect of sputtering conditions on growth and properties of ZnO :Al films
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作者 石倩 代明江 +3 位作者 林松盛 侯惠君 韦春贝 胡芳 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第5期1517-1524,共8页
Al-doped zinc oxide(AZO) films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target-substrate distance on the electrical, optical properties an... Al-doped zinc oxide(AZO) films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target-substrate distance on the electrical, optical properties and microstructure and crystal structures of the resulting films were investigated by scanning electron microscopy(SEM), atomic force microscopy(AFM), X-ray diffraction(XRD), spectrophotometer and Hall-effect measurement system, respectively. XRD results show that all AZO films exhibit a strong preferred c-axis orientation. However, the crystallinity of films decreases with the increase of substrate rotation speed, accompanying with the unbalanced grains grows. For the films prepared at different target-substrate distances, the uniform microstructure and morphology are observed. The highest carrier concentration of 5.9×1020 cm-3 and Hall mobility of 13.1 cm^2/(V·s) are obtained at substrate rotation speed of 0 and target-substrate distance of 7 cm. The results indicate that the structure and performances of the AZO films are strongly affected by substrate rotation speed. 展开更多
关键词 ZnO thin film mid-frequency magnetron sputtering substrate rotation speed target-substrate distance optoelectronic performance
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ZnO:Al Films Prepared by Reactive Mid-frequency Magnetron Sputtering with Rotating Cathode 被引量:1
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作者 Ruijiang Hong Shuhua Xu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2010年第10期872-877,共6页
Al-doped zinc oxide (ZnO:Al,AZO) films were deposited on glass substrates using a reactive mid-frequency (MF) magnetron sputtering process with rotating cathodes.The influence of deposition parameters on structur... Al-doped zinc oxide (ZnO:Al,AZO) films were deposited on glass substrates using a reactive mid-frequency (MF) magnetron sputtering process with rotating cathodes.The influence of deposition parameters on structural,electrical and optical properties of AZO films is investigated.It is observed that the rotating magnetron targets exhibited a sputtered metallic surface over a wider range,and there is no re-deposition zone between the racetracks.The films deposited at static deposition mode demonstrate more homogenous in thickness and resistivity across the target surface compared with conventional rectangular targets.The films deposited under the proper conditions show a regular cone-shaped grain surface and densely packed columnar structure.The minimum resistivity of 3.16×10-4 ·cm was obtained for the film prepared at substrate temperature of 150 C,gas pressure of 640 MPa and oxygen partial pressure of 34 MPa. 展开更多
关键词 Al-doped zinc oxide mid-frequency magnetron sputtering Properties
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Microstructure and Properties of the Cr–Si–N Coatings Deposited by Combining High-Power Impulse Magnetron Sputtering(HiPIMS) and Pulsed DC Magnetron Sputtering 被引量:1
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作者 Tie-Gang Wang Yu Dong +3 位作者 Belachew Abera Gebrekidan Yan-Mei Liu Qi-Xiang Fan Kwang Ho Kim 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2017年第7期688-696,共9页
The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of th... The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of the Si target.By virtue of electron-probe microanalysis, X-ray diffraction analysis and scanning electron microscopy, the influence of the Si content on the coating composition, phase constituents, deposition rate, surface morphology and microstructure was investigated systematically. In addition, the change rules of micro-hardness, internal stress, adhesion, friction coefficient and wear rate with increasing Si content were also obtained. In this work, the precipitation of silicon in the coating was found.With increasing Si content, the coating microstructure gradually evolved from continuous columnar to discontinuous columnar and quasi-equiaxed crystals; accordingly, the coating inner stress first declined sharply and then kept almost constant. Both the coating hardness and the friction coefficient have the same change tendency with the increase of the Si content, namely increasing at first and then decreasing. The Cr–Si–N coating presented the highest hardness and average friction coefficient for an Si content of about 9.7 at.%, but the wear resistance decreased slightly due to the high brittleness.The above phenomenon was attributed to a microstructural evolution of the Cr–Si–N coatings induced by the silicon addition. 展开更多
关键词 Cr–Si–N coating High-power impulse magnetron sputtering(HiPIMS) pulsed DC magnetron sputtering Mechanical property Friction coefficient
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High energy soliton pulse generation by a magnetron-sputtering-deposition-grown MoTe_2 saturable absorber 被引量:16
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作者 JINTAO WANG ZIKE JIANG +6 位作者 HAO CHEN JIARONG LI JINDE YIN JINZHANG WANG TINGCHAO HE PEIGUANG YAN SHUANGCHEN RUAN 《Photonics Research》 SCIE EI 2018年第6期535-541,共7页
The pulse energy in the ultrafast soliton fiber laser oscillators is usually limited by the well-known wave-breaking phenomenon owing to the absence era desirable real saturable absorber (SA) with high power toleran... The pulse energy in the ultrafast soliton fiber laser oscillators is usually limited by the well-known wave-breaking phenomenon owing to the absence era desirable real saturable absorber (SA) with high power tolerance and large modulation depth. Here, we report a type of microfiber-based MoTe2 SA fabricated by the magnetron-sputtering deposition (MSD) method. High-energy wave-breaking free soliton pulses were generated with pulse duration/pulse energy/average output power of 229 fs/2.14 nJ/57 mW in the 1.5 μm regime and 1.3 ps/13.8 nJ/ 212 mW in the 2 μm regime, respectively. To our knowledge, the generated soliton pulses at 1.5μm had the shortest pulse duration and the highest output power among the reported erbium-doped fiber lasers mode locked by transition metal dichalcogenides. Moreover, this was the first demonstration of a MoTe2-based SA in fiber lasers in the 2 ltm regime, and the pulse energy/output power are the highest in the reported thulium-doped fiber lasers mode locked by two-dlmensional materials. Our results suggest that a microfiber-based MoTe2 SA could be used as an excellent photonic device for ultrafast pulse generation, and the MSD technique opens a promising route to produce a high-performance SA with high power tolerance and large modulation depth, which are beneficial for high-energy wave-breaking free pulse generation. 展开更多
关键词 LASERS fiber Mode-locked lasers Ultrafast lasers Nonlinear opticalmaterials
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带有反向正脉冲的HiPIMS技术制备ta-C膜及性能研究
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作者 何哲秋 冯利民 +2 位作者 李建中 石俊杰 高宣雯 《表面技术》 EI CAS CSCD 北大核心 2024年第13期96-103,共8页
目的提高切削刀具和耐磨零件的表面硬度和摩擦性能,延长工具的使用寿命。方法基于高功率脉冲磁控溅射技术(HiPIMS),在每个脉冲周期尾部施加反向正脉冲,控制ta-C沉积过程,通过电镜测试、拉曼测试、XPS测试、纳米压痕硬度测试、摩擦磨损... 目的提高切削刀具和耐磨零件的表面硬度和摩擦性能,延长工具的使用寿命。方法基于高功率脉冲磁控溅射技术(HiPIMS),在每个脉冲周期尾部施加反向正脉冲,控制ta-C沉积过程,通过电镜测试、拉曼测试、XPS测试、纳米压痕硬度测试、摩擦磨损实验分别分析脉冲频率、反向正脉冲能量对ta-C薄膜沉积速度、膜结构、硬度、结合强度、耐磨性能的影响。结果采用钨钢为基体进行实验,将频率从4000 Hz到1500 Hz依次降低,制备涂层。在频率为4000 Hz的处理条件下制备涂层时,ta-C膜层的厚度为479.2 nm,通过XPS可知,此时sp^(3)的原子数分数达到59.53%,硬度为32.65 GPa,且得到的薄膜在12.7 N时失效,耐磨性较差,摩擦因数约为0.163。在频率为1500 Hz的处理条件下制备涂层时,涂层各项性能均有所提升,ta-C膜层的厚度为488.6 nm,通过XPS可知,此时sp^(3)的原子数分数达到63.74%,硬度为40.485 GPa,且薄膜在14.9 N时失效,耐磨性较优,摩擦因数约为0.138。结论通过调节脉冲频率,可以有效提高ta-C薄膜的沉积效率,改善膜的结构和性能。随着沉积ta-C薄膜频率的降低,薄膜中sp^(3)的含量呈现增大趋势,摩擦因数也随之降低,有效改善了ta-C膜的耐磨性。 展开更多
关键词 高功率脉冲磁控溅射技术 类金刚石膜 脉冲频率 结合力 硬度 耐磨性
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Effect of Pulse Width and Frequency of Bias DC Voltage on the Microstructure of Pure Cr Coatings by Magnetron Sputter Ion Plating 被引量:1
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作者 Li Hongtao Jiang Bailing +2 位作者 Niu Yi Yang Bo Cao Zheng 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2012年第S1期371-374,共4页
Pure Cr coatings were deposited onto the pieces of silicon wafer at different pulse width and frequency of bias voltage by magnetron sputter ion plating.The microstructure and preferential orientation of pure Cr coati... Pure Cr coatings were deposited onto the pieces of silicon wafer at different pulse width and frequency of bias voltage by magnetron sputter ion plating.The microstructure and preferential orientation of pure Cr coatings were analyzed by SEM and XRD respectively.Results show that the diffusion ability of atoms on the coating surface was improved due to the substrate temperature rise effect caused by the ion bombardment with the pulse width increased.However,the effect of frequency of bias DC voltage on the microstructure of pure Cr coatings was particularly significant.The bombardment ions action on the coating surface were more uniformly and more dispersed compared with the nucleation rate of Cr atoms and the density of pure Cr coatings both improved with the frequency increased are the main reasons that the microstructure of pure Cr coatings changed from dense,granular columnar grain outcrops to uniformity,small nano-crystalline particles. 展开更多
关键词 pulse width FREQUENCY magnetron sputtering MICROSTRUCTURE preferential orientation
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脉冲电流和溅射气压对轴瓦内表面制备Al-Sn-Cu薄膜的影响
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作者 唐玉峰 张健 唐智聪 《机械工程师》 2024年第12期35-38,共4页
通过脉冲直流磁控溅射技术在铜合金轴瓦内表面制备Ni过渡层后制备Al-Sn-Cu薄膜。为了得到更好的薄膜制备工艺,利用SEM扫描电子显微镜和EDS能谱仪对制得的Al-Sn-Cu薄膜表面进行检测分析,探究了溅射气压、脉冲直流电源的电流及Ni过镀层对... 通过脉冲直流磁控溅射技术在铜合金轴瓦内表面制备Ni过渡层后制备Al-Sn-Cu薄膜。为了得到更好的薄膜制备工艺,利用SEM扫描电子显微镜和EDS能谱仪对制得的Al-Sn-Cu薄膜表面进行检测分析,探究了溅射气压、脉冲直流电源的电流及Ni过镀层对制得的薄膜表面形貌及结合强度的影响。结果表明,适当的溅射气压和增大脉冲电流有利于薄膜的沉积,提高了薄膜的平整性和致密性。制备Ni过渡层有利于增强薄膜晶体结构的稳定性,提高薄膜与轴瓦的结合力。增强Al-Sn-Cu薄膜表面的均匀性和致密性,可以减轻薄膜表面的氧化。 展开更多
关键词 磁控溅射 溅射气压 脉冲电流 表面形貌
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脉冲频率对高脉冲磁控溅射Cr/C镀层组织结构和耐蚀性的影响
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作者 鲁媛媛 吴坤尧 +3 位作者 罗发 杨超群 刘伟锋 曹悦悦 《西安航空学院学报》 2024年第3期44-49,共6页
为研究磁控溅射脉冲频率对镀层组织结构和耐蚀性的影响,以200、300、400、500和600 Hz脉冲频率下制备的Cr/C镀层为对象,采用XRD、SEM、电化学工作站对其相组成、微观组织和耐蚀性进行了表征分析。结果表明:不同脉冲频率下制备的Cr/C镀... 为研究磁控溅射脉冲频率对镀层组织结构和耐蚀性的影响,以200、300、400、500和600 Hz脉冲频率下制备的Cr/C镀层为对象,采用XRD、SEM、电化学工作站对其相组成、微观组织和耐蚀性进行了表征分析。结果表明:不同脉冲频率下制备的Cr/C镀层相组成相同,均为Cr_(7)C_(3);Cr/C镀层的表面形貌均为菜花状颗粒,截面组织均为柱状晶;随着脉冲频率的增加,Cr/C镀层的组织变粗,柱状晶之间的空隙增大,致密性降低,表面粗糙度增加,镀层的厚度增大,镀层的平均沉积速率从18.45 nm·min^(-1)增大到28.08 nm·min^(-1);脉冲频率为500 Hz时镀层的腐蚀电位最高、腐蚀电流最低,腐蚀速率仅为0.00296 mm·a^(-1)。 展开更多
关键词 脉冲磁控溅射 脉冲频率 Cr/C镀层 组织结构 耐蚀性
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溅射沉积技术的发展及其现状 被引量:46
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作者 杨文茂 刘艳文 +2 位作者 徐禄祥 冷永祥 黄楠 《真空科学与技术学报》 EI CAS CSCD 北大核心 2005年第3期204-210,共7页
论述了溅射沉积薄膜技术的发展历程及其目前的研究应用状况。二极溅射应用于薄膜制备,揭开了溅射沉积技术的序幕,磁控溅射促使溅射沉积技术进入实质的工业化应用,并通过控制磁控靶磁场的分布方式和增加磁控靶数量,进一步发展为非平衡磁... 论述了溅射沉积薄膜技术的发展历程及其目前的研究应用状况。二极溅射应用于薄膜制备,揭开了溅射沉积技术的序幕,磁控溅射促使溅射沉积技术进入实质的工业化应用,并通过控制磁控靶磁场的分布方式和增加磁控靶数量,进一步发展为非平衡磁控溅射、多靶闭合式非平衡磁控溅射等,拓宽了应用范围。射频、脉冲电源尤其是脉冲电源在溅射技术中的使用极大地延伸了溅射沉积技术的应用范围。 展开更多
关键词 溅射沉积 磁控溅射 非平衡磁控溅射 脉冲溅射
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高功率调制脉冲磁控溅射沉积TiAlSiN纳米复合涂层结构调控与性能研究 被引量:11
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作者 吴志立 李玉阁 +1 位作者 吴彼 雷明凯 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2015年第12期1254-1260,共7页
采用高功率调制脉冲磁控溅射Al/(Al+Ti)原子比(x)分别为0.25、0.5和0.67的TiAlSi合金靶,溅射功率1~4kW,氮气分压25%,工作气压0.3Pa,在Si(100)和AISI304奥氏体不锈钢基片上沉积了TiAlSiN纳米复合涂层。TiAlSiN涂层中氮含量保持在... 采用高功率调制脉冲磁控溅射Al/(Al+Ti)原子比(x)分别为0.25、0.5和0.67的TiAlSi合金靶,溅射功率1~4kW,氮气分压25%,工作气压0.3Pa,在Si(100)和AISI304奥氏体不锈钢基片上沉积了TiAlSiN纳米复合涂层。TiAlSiN涂层中氮含量保持在52.0at%~56.7at%之间,均形成了nc-TiAlN/a-Si3N4/AlN纳米晶/非晶复合结构。随着原子比x增加,非晶含量增加,涂层硬度先升高而后降低。当x=0.5时,硬度最高可达28.7GPa。溅射功率升高可提高溅射等离子体中金属离化程度,促进涂层调幅分解的进行,形成了界面清晰的非晶包裹纳米晶结构,且晶粒尺寸基本保持不变。当x=0.67时,溅射功率由1kW上升到4kW时,硬度由16.4GPa升至21.3GPa。不同靶材成分和溅射功率条件下沉积的TiAlSiN涂层的磨损率为(0.13~6.25)×10^-5mm^3/(N·m),具有优良的耐磨性能。当x=0.67,溅射功率2kW时,nc-TiAlN/a-Si3N4纳米复合涂层具有最优的耐磨性能。 展开更多
关键词 高功率调制脉冲磁控溅射 TiAlSiN纳米复合涂层 微结构 硬度 磨损
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高功率脉冲磁控溅射沉积原理与工艺研究进展 被引量:25
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作者 吴志立 朱小鹏 雷明凯 《中国表面工程》 EI CAS CSCD 北大核心 2012年第5期15-20,共6页
高功率脉冲磁控溅射技术是一种峰值功率超过平均功率2个量级、溅射靶材原子高度离化的脉冲溅射技术,作为一种新的离子化物理气相沉积技术,已成为国际研究的热点,有关高功率脉冲放电、等离子体特性、薄膜及其工艺等方面的研究进展十分迅... 高功率脉冲磁控溅射技术是一种峰值功率超过平均功率2个量级、溅射靶材原子高度离化的脉冲溅射技术,作为一种新的离子化物理气相沉积技术,已成为国际研究的热点,有关高功率脉冲放电、等离子体特性、薄膜及其工艺等方面的研究进展十分迅速。文中从高功率脉冲磁控溅射的原理出发,介绍10多年来高功率脉冲电源的发展,从高功率脉冲放电等离子体特性与放电物理、等离子体模型,以及沉积速率和薄膜特性等方面综述技术的研究进展。 展开更多
关键词 高功率脉冲磁控溅射 等离子体 薄膜 研究进展
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三靶共溅射纳米复合Cr-Al-Si-N涂层的制备及摩擦学性能研究 被引量:7
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作者 王铁钢 蒙德强 +3 位作者 李柏松 赵彦辉 刘艳梅 姜肃猛 《表面技术》 EI CAS CSCD 北大核心 2019年第9期78-86,共9页
目的利用高功率脉冲磁控溅射技术离化率高、溅射离子能量高等优点,在Cr-Al-N涂层中添加Si元素研制a-Si3N4包裹nc-(Cr,Al)N的纳米复合涂层,通过改变反应沉积时的N2/Ar比来调控涂层成分与结构,实现纳米复合Cr-Al-Si-N涂层性能优化。方法... 目的利用高功率脉冲磁控溅射技术离化率高、溅射离子能量高等优点,在Cr-Al-N涂层中添加Si元素研制a-Si3N4包裹nc-(Cr,Al)N的纳米复合涂层,通过改变反应沉积时的N2/Ar比来调控涂层成分与结构,实现纳米复合Cr-Al-Si-N涂层性能优化。方法采用高功率脉冲与脉冲直流复合磁控溅射技术制备Cr-Al-Si-N涂层。利用扫描电镜、X射线衍射仪、能谱仪、应力仪、纳米压痕仪、划痕测试仪和摩擦试验机,研究N2/Ar比对涂层成分、结构、力学性能以及摩擦学行为的影响。结果涂层主要由面心立方结构的CrN与AlN相组成,且沿(200)晶面择优生长。当N2/Ar流量比为3∶1时,涂层与基体结合最好,临界载荷约为36.5N;摩擦系数和内应力较低,分别为0.5和-0.48GPa。当N2/Ar流量比为4∶1时,H/E值和H^3/E^*2值升至最高,分别为0.11和0.24GPa,磨损率最低,约为1.9×10^-4μm^3/(N·μm)。结论当N2/Ar流量比为4∶1时,三靶共溅射制备的Cr-Al-Si-N涂层硬度较高,耐磨性能最好。 展开更多
关键词 高功率脉冲磁控溅射 脉冲直流磁控溅射 三靶共溅射 纳米复合涂层 Cr-Al-Si-N涂层 N2/Ar流量比 临界载荷 摩擦系数 磨损率
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铀表面脉冲偏压MSIP铝镀层的电化学腐蚀行为 被引量:7
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作者 王庆富 张鹏程 +3 位作者 陈林 刘清和 郎定木 王晓红 《原子能科学技术》 EI CAS CSCD 北大核心 2009年第7期594-599,共6页
采用脉冲偏压磁控溅射离子镀(MSIP)技术在贫铀表面制备铝镀层,利用电化学测试技术、扫描电镜(SEM)及X射线能谱(EDS)对铝镀层在50μg/g Cl-水溶液中的电化学腐蚀行为进行研究。结果表明:铝镀层的腐蚀电位-534.8 mV高于贫铀的腐蚀电位-641... 采用脉冲偏压磁控溅射离子镀(MSIP)技术在贫铀表面制备铝镀层,利用电化学测试技术、扫描电镜(SEM)及X射线能谱(EDS)对铝镀层在50μg/g Cl-水溶液中的电化学腐蚀行为进行研究。结果表明:铝镀层的腐蚀电位-534.8 mV高于贫铀的腐蚀电位-641.2 mV,它对贫铀是一种阴极性镀层;镀铝贫铀样品的极化电阻和电化学阻抗幅值远大于贫铀,腐蚀电流远小于贫铀,铝镀层对贫铀基体具有良好的防腐蚀性能;镀铝贫铀样品的腐蚀特征为局部腐蚀,并出现镀层破裂、剥落,抗腐蚀性能变差;铝/铀界面伪扩散层具有一定的抗腐蚀能力。 展开更多
关键词 贫铀 铝镀层 电化学腐蚀 磁控溅射离子镀 脉冲偏压
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反应磁控溅射的进展 被引量:29
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作者 茅昕辉 陈国平 蔡炳初 《真空》 CAS 北大核心 2001年第4期1-7,共7页
反应磁控溅射被广泛应用于制备化合物薄膜。本文分析了反应磁控溅射中迟滞效应、靶中毒与打火现象 ,讨论了提高反应磁控溅射沉积速率、抑制靶面打火与保持溅射过程稳定性的途径。在阐述了近年来反应磁控溅射最新研发进展的基础上 ,介绍... 反应磁控溅射被广泛应用于制备化合物薄膜。本文分析了反应磁控溅射中迟滞效应、靶中毒与打火现象 ,讨论了提高反应磁控溅射沉积速率、抑制靶面打火与保持溅射过程稳定性的途径。在阐述了近年来反应磁控溅射最新研发进展的基础上 ,介绍了中频溅射在减反膜。 展开更多
关键词 反应磁控溅射 中频溅射 脉冲溅射 化合物薄膜 迟滞效应 制备 打火 抑制途径 靶中毒
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