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Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells
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作者 Rui Wu Jun-Ling Wang +1 位作者 Gang Yan Rong Wang 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第4期70-73,共4页
Photoluminescence(PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons ... Photoluminescence(PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss(NIEL), which shows a quadratic dependence between damage coefficient and NIEL. 展开更多
关键词 In Photoluminescence Analysis of Electron damage for minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells Ge
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