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ACHIEVING THRESHOLD BARRIER OF 1 nm ROUGHNESS VALUE OF SILICON SURFACE BY DIAMOND TURNING
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作者 Fang, Fengzhou Venkatesh, V.C. 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 1998年第1期7-11,19,共5页
nm roughness value of silicon surface by diamond turning is obtained firstly and three novel techniques are proposed. The surface integrity is studied in detail by using atomic force microscope, scanning electron micr... nm roughness value of silicon surface by diamond turning is obtained firstly and three novel techniques are proposed. The surface integrity is studied in detail by using atomic force microscope, scanning electron microscope, and stylus surface instrument. The diamond tool sharpness has a considerable influence on the machined surface, therefore a novel technique—brightness modulation for measuring accurately the edge of the cutter is proposed. Mirror surfaces are assessed by another novel technique—a measure of their reflectivity. A third technique, single grit diamond machining is carried out. It supplies a experimental evidence for verifying the obtained high quality turned surfaces. 展开更多
关键词 mirror surfaces Diamond turning Brittle materials Single grit machining
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