InGaAs/InP avalanche photodiodes （APD） are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active...InGaAs/InP avalanche photodiodes （APD） are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector＇s afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector＇s performance is consistent with gated operation.展开更多
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-...Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.展开更多
The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performa...The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term reliability.In this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge.The surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier lifetime.The first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were compared.This shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge atoms.The passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ratios.Experimentally,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the film.The minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of Ge-SiO.The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density.This study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.展开更多
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.展开更多
Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damage...Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damages and defects. In this paper, we present the analysis of Te and TeO2 species on the surfaces of CdZnTe nuclear detectors treated with hydrogen bromide and ammonium-based solutions. The CdZnTe wafers were chemo-mechanically polished in a mixture of hydrogen bromide in hydrogen peroxide and ethylene glycol, followed by a chemical passivation in a mixture of ammonium fluoride and hydrogen peroxide solution. X-ray photoelectron spectroscopy showed significant conversion of Te to TeO2, thus producing a more chemically stable surface. The resistivity of the CdZnTe samples is in the order of 1010 ohms-cm. The current for a given applied voltage increased following the passivation and decreased after a 3-hour period. Results from spectral response measurements showed that the 59.5-keV gamma-peak of Am-241 was stable under the same channel for the surface treatment processes.展开更多
In quantum key distribution(QKD),the passive decoy-state method can simplify the intensity modulation and reduce some of side-channel information leakage and modulation errors.It is usually implemented with a heralded...In quantum key distribution(QKD),the passive decoy-state method can simplify the intensity modulation and reduce some of side-channel information leakage and modulation errors.It is usually implemented with a heralded single-photon source.In Wang et al 2016(Phys.Rev.A 96032312),a novel passive decoy-state method is proposed by Wang et al,which uses two local detectors to generate more detection events for tightly estimating channel parameters.However,in the original scheme,the two local detectors are assumed to be identical,including the same detection efficiency and dark count rate,which is often not satisfied in the realistic experiment.In this paper,we construct a model for this passive decoy-state QKD scheme with two mismatched detectors and explore the effect on QKD performance with certain parameters.We also take the finite-size effect into consideration,showing the performance with statistical fluctuations.The results show that the efficiencies of local detectors affect the key rate more obviously than dark count rates.展开更多
基金supported by the National High Technology Research and Development Program of China(Grant No.2013AA122902)the National Key Scientific Instrument and Equipment Development Project of China(Grant No.2013YQ030595)the National Natural Science Foundation of China(Grant Nos.61274024 and 61474123)
文摘InGaAs/InP avalanche photodiodes （APD） are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector＇s afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector＇s performance is consistent with gated operation.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)the Natural Science Foundation of Beijing Municipality of China(Grant No.4192064)+1 种基金the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the JKW Project of China(Grant No.31512060106)。
文摘Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.
基金supported by the National Natural Science Foundation of China Youth Fund(No.12005017)。
文摘The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term reliability.In this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge.The surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier lifetime.The first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were compared.This shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge atoms.The passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ratios.Experimentally,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the film.The minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of Ge-SiO.The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density.This study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.
基金supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104)the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
文摘The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.
文摘Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damages and defects. In this paper, we present the analysis of Te and TeO2 species on the surfaces of CdZnTe nuclear detectors treated with hydrogen bromide and ammonium-based solutions. The CdZnTe wafers were chemo-mechanically polished in a mixture of hydrogen bromide in hydrogen peroxide and ethylene glycol, followed by a chemical passivation in a mixture of ammonium fluoride and hydrogen peroxide solution. X-ray photoelectron spectroscopy showed significant conversion of Te to TeO2, thus producing a more chemically stable surface. The resistivity of the CdZnTe samples is in the order of 1010 ohms-cm. The current for a given applied voltage increased following the passivation and decreased after a 3-hour period. Results from spectral response measurements showed that the 59.5-keV gamma-peak of Am-241 was stable under the same channel for the surface treatment processes.
基金We gratefully acknowledge the financial support from the National Key R&D Program of China(2018YFA0306400,2017YFA0304100)the National Natural Science Foundation of China(12074194,11774180,U19A2075,12104240,62101285)+2 种基金the Leading-edge technology Program of Jiangsu Natural Science Foundation(BK20192001)Natural Science Foundation of Jiangsu Province(BK20210582)NUPTSF(NY220122,NY220123).
文摘In quantum key distribution(QKD),the passive decoy-state method can simplify the intensity modulation and reduce some of side-channel information leakage and modulation errors.It is usually implemented with a heralded single-photon source.In Wang et al 2016(Phys.Rev.A 96032312),a novel passive decoy-state method is proposed by Wang et al,which uses two local detectors to generate more detection events for tightly estimating channel parameters.However,in the original scheme,the two local detectors are assumed to be identical,including the same detection efficiency and dark count rate,which is often not satisfied in the realistic experiment.In this paper,we construct a model for this passive decoy-state QKD scheme with two mismatched detectors and explore the effect on QKD performance with certain parameters.We also take the finite-size effect into consideration,showing the performance with statistical fluctuations.The results show that the efficiencies of local detectors affect the key rate more obviously than dark count rates.
