基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中...基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。展开更多
This paper presents the design and simulation of several fixed-tuned sub-harmonic mixers cover frequencies from 110 GH to 130 GHz, 215 GH to 235 GHz, 310 GH to 350 GHz, and 400 GH to 440 GHz. Among them, 120 GHz, 225 ...This paper presents the design and simulation of several fixed-tuned sub-harmonic mixers cover frequencies from 110 GH to 130 GHz, 215 GH to 235 GHz, 310 GH to 350 GHz, and 400 GH to 440 GHz. Among them, 120 GHz, 225 GHz, 330 GHz subharmonic mixers are designed with flip-chipped planar schottky diode mounted onto a suspended quartz-based substrate, the 225 GHz and 425 GHz subharmonic mixers are GaAs membrane integrated, and the 115 GHz subharmonic mixer has been fabricated and tested already.展开更多
In this paper,an improved method,which is based on the harmonic-balance tech-nique,for speeding up the convergence iteration procedure is presented.As an example,it isapplied to the nonlinear analysis of microwave mix...In this paper,an improved method,which is based on the harmonic-balance tech-nique,for speeding up the convergence iteration procedure is presented.As an example,it isapplied to the nonlinear analysis of microwave mixer,in which a simple time domain to fre-quency domain transformation technique for the mixer diode is firstly introduced.The use of thistechnique saves computing time dramatically.And the analyzed results are in good agreementwith the results published.The improved method can also be extended to the CAA of nonlinearcircuits with multi-devices.展开更多
文摘基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。
基金supported by the National Natural Science Foundation of China under Grant No.61301051
文摘This paper presents the design and simulation of several fixed-tuned sub-harmonic mixers cover frequencies from 110 GH to 130 GHz, 215 GH to 235 GHz, 310 GH to 350 GHz, and 400 GH to 440 GHz. Among them, 120 GHz, 225 GHz, 330 GHz subharmonic mixers are designed with flip-chipped planar schottky diode mounted onto a suspended quartz-based substrate, the 225 GHz and 425 GHz subharmonic mixers are GaAs membrane integrated, and the 115 GHz subharmonic mixer has been fabricated and tested already.
文摘In this paper,an improved method,which is based on the harmonic-balance tech-nique,for speeding up the convergence iteration procedure is presented.As an example,it isapplied to the nonlinear analysis of microwave mixer,in which a simple time domain to fre-quency domain transformation technique for the mixer diode is firstly introduced.The use of thistechnique saves computing time dramatically.And the analyzed results are in good agreementwith the results published.The improved method can also be extended to the CAA of nonlinearcircuits with multi-devices.
