Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate （SG） nMOSFET is developed. The SchrSdinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The eentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

Seasonal Adjustment of China’s Monthly Data to Take into Account the Effect of Mobile Holidays

Based on the X-13-ARIMA-SEATS model, aiming at the problem of mobile holidays in China’s economic data, this paper introduces a new method of seasonal adjustment based on the AICC criterion to objectively select the parameters of dummy variables of mobile holidays. Taking the current total value of China’s import and export as an example, we expound a new method for seasonal adjustment of mobile holidays such as Spring Festival, Dragon Boat Festival and Mid-Autumn Festival. Finally, the model is used to predict the total value of China’s import and export in and out of the sample. The prediction results show that the relative error of the out of sample data is less than 5%. The new method has advantages in the processing of macroeconomic data.

“Hot Nano Spots” as an Interpretation of So-Called Non-Thermal Biological Mobile Phone Effects

Indications exist that mobile phones may cause non-specific biological effects. They are classified as being of implausible non-thermal nature due to low quantum energy and low specific absorption rate levels, even if considering worst cases of "hot spots" of only millimeter size. The considerations of this paper demonstrate that classical theory of polarization offers a conventional interpretation for all three the existence of so far unclarified effects, their low reproducibility and their low intensity. The basis of this explanation is given by the assumption that hot spots contain even hotter “nano spots” on a molecular level according to well known mechanisms of γ-relaxation. In this paper, the concept is put for discussion assuming a heterogeneous system that consists of water molecules as well as larger-sized functional molecules. A consistent interpretation through temperature increase on the level of nanometer sized molecular compounds promises to favor interdisciplinary discussions with respect to safety regulations.

Neighbour Peer Selection Scheme Based on Effective Capacity for Mobile Peer-to-Peer Streaming

For Peer-to-Peer (P2P) streaming services in mobile networks, the selection of appropriate neighbour peers from candidate peers with demanding data is an important approach to improve Quality-of-Service (QoS). This paper proposes a novel Effective Capacity Peer Selection (ECPS) scheme based on effective capacity. In the ECPS scheme, the neighbour peer selection problem was modeled using the Multiple Attribute Decision Making (MADM) theory, which considered multiple factors of candidate peers, including Signal to Interference and Noise Ratio (SINR), residency time, power level, security, moving speed, and effective capacity. This model could increase the suitability of ECPS for wireless mobile environments. Then, the Technique for Order Preference by Similarity to Ideal Solution (TOPSIS) was used to solve the MADM problem and identify the preferred neighbour peers. Simulation results show that the ECPS scheme can improve the network throughput, reduce packet delay by about 82%, and almost double the packet delivery ratio of the mobile P2P streaming service.

A 0.6 μm CMOS bandgap voltage reference circuit

On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.

Performance improvement in pentacene organic thin film transistors by inserting a C_(60) ultrathin layer

The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.

Reverse Direction Micellar Electrokinetic Capillary Chromatography, Hydrostatic Flow Injection and Diffusional Injection Analysis： An Experimental Work

Separation was reported by Dunn, Hankins and Ghowsi for the case that ions incapillary electrophoresis move opposite to electroosmosis and ions move faster than flow finally they get separated and reach the detector. Similar mode for electrokinetic chromatography is reported for p-xylene and toluene separation, which is called reverse direction MECC （micellar electrokinetic capillary chromatography）. The effect of injection time on separation in reverse direction micellar electrokinetic capillary chromatography is investigated. In this study, hydrostatic and diffusion injection were studied.

Design of the Mobile Phone Charging Device based on Human Motion Energy and Light Energy

This paper designs a mechanical swing of placementing mobile phone, which is inspired by the mechanical watch automatic winding process. The use of the kinetic energy generated by human body motion drives the wheel swing and the generator, it can carry out mobile phone additional charge through the electronic components rectifier and DC/DC converter regulator, the use of human motion and light energy can extend a fixed charge mobile phone standby time. The human motion power uses electromagnetic coupling technique and collects energy by using foot swing, solar power generation uses DSP chip in TMS320F28927 control a plurality of charging circuit, inverter circuit and solar maximum power point tracking by sampling and multiple output PWM wave. Finally, charging process has the basic constant current process discovered by device testing, the design of human motion and light energy mobile phone charger can satisfy the need of mobile phone rechargeable lithium batteries.

The Effect of a Novel Cytokine,High Mobility Group Box 1 Protein,on the Development of Traumatic Sepsis

Sepsis and subsequent multiple organ dysfunction syndrome(MODS) are frequent complications after severe traumata or burns involving a large area,and these remain as the two most common causes of morbidity and mortality in critical illnesses.Despite the recent rapid advances in intensive

Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Three-dimensional(3D)nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport.In this context,Ⅲ-Ⅴ semiconductor-based nanowires with low electron effective mass and strong spin-orbit coupling are particularly investigated because of their exceptional quantum transport properties and the good electrostatic control they provide.Among the main challenges involved in the processing of these nanodevices are(i)the management of the gate stack which requires ex-situ passivation treatment to reduce the density of traps at the oxide/semiconductor interface,(ii)the ability to get good ohmic contacts for source and drain electrodes and(iii)the scalability and reliability of the process for the fabrication of complex architectures based on nanowire networks.In this paper,we show that selective area molecular beam epitaxy of in-plane InGaAs/InP core-shell nanowires with raised heavily doped source and drain contacts can address these different issues.Electrical characterization of the devices down to 4 K reveals the positive impact of the InP shell on the gate electrostatic control and effective electron mobility.Although comparable to the best reported values for In(Ga)As nanostructures grown on InP,this latter is severely reduced for sub-100 nm channel highlighting remaining issue to reach the ballistic regime.