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The high squeezing and entanglement in regular loss modulated optical parametric amplifier
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作者 赵超樱 谭维翰 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第11期113-116,共4页
We investigate the quantum fluctuation characteristic for time dependent regular loss modulated optical parametric amplifier for below and above threshold regions. It is found that a high squeezing and entanglement ca... We investigate the quantum fluctuation characteristic for time dependent regular loss modulated optical parametric amplifier for below and above threshold regions. It is found that a high squeezing and entanglement can be achieved. 展开更多
关键词 regular loss modulated SQUEEZING ENTANGLEMENT
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The effect of conductor loss on half-wave voltage and modulation bandwidth of electro-optic modulators 被引量:3
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作者 刘子龙 朱大庆 《Chinese Optics Letters》 SCIE EI CAS CSCD 2004年第10期586-589,共4页
In this paper, we theoretically deduce the expressions of half-wave voltage and 3-dB modulation bandwidth in which conductor loss is taken into account. The results suggest that it will affect the theoretical values o... In this paper, we theoretically deduce the expressions of half-wave voltage and 3-dB modulation bandwidth in which conductor loss is taken into account. The results suggest that it will affect the theoretical values of half-wave voltage and bandwidth as well as the optimized electrode's dimension whether considering the conductor loss or not. As an example, we present a Mach-Zehnder (MZ) type polymer waveguide amplitude modulator. The half-wave voltage increases by 1 V and the 3-dB bandwidth decreases by 30% when the conductor loss is taken into account. Besides, the effects of impedance mismatching and velocity mismatching between microwave and light wave on the half-wave voltage, and 3-dB bandwidth are discussed. 展开更多
关键词 In WAVE The effect of conductor loss on half-wave voltage and modulation bandwidth of electro-optic modulators
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Soft switching circuit to improve efficiency of all solid-state Marx modulator for DBDs
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作者 童立青 刘克富 王永刚 《Plasma Science and Technology》 SCIE EI CAS CSCD 2018年第2期34-40,共7页
For an all solid-state Marx modulator applied in dielectric barrier discharges(DBDs),hard switching results in a very low efficiency.In this paper,a series resonant soft switching circuit,which series an inductance ... For an all solid-state Marx modulator applied in dielectric barrier discharges(DBDs),hard switching results in a very low efficiency.In this paper,a series resonant soft switching circuit,which series an inductance with DBD capacitor,is proposed to reduce the power loss.The power loss of the all circuit status with hard switching was analyzed,and the maximum power loss occurred during discharging at the rising and falling edges.The power loss of the series resonant soft switching circuit was also presented.A comparative analysis of the two circuits determined that the soft switching circuit greatly reduced power loss.The experimental results also demonstrated that the soft switching circuit improved the power transmission efficiency of an all solid-state Marx modulator for DBDs by up to 3 times. 展开更多
关键词 dielectric barrier discharges all solid-state Marx modulator series resonant power loss
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The design of electroabsorption modulators with negative chirp and very low insertion loss 被引量:1
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作者 Kambiz Abedi 《Journal of Semiconductors》 EI CAS CSCD 2012年第6期14-19,共6页
Electroabsorption modulators(EAMs) with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells(AICD-SQWs) based on InGaAlAs mat... Electroabsorption modulators(EAMs) with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells(AICD-SQWs) based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive(CS) to tensile(TS).The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kronig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032%to 0.05%(TS) and-0.52% to-0.50%(CS),respectively. 展开更多
关键词 electroabsorption modulators AICD-SQW strain chirp insertion loss
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