Half-integer Shapiro steps in MgB_(2) focused He ion beam Josephson junctions

Half-integer microwave induced steps(Shapiro steps)have been observed in many different Josephson junction systems,which have attracted a lot of attention because they signify the deviation of current phase relation(CPR)and uncover many unconventional physical properties.In this article,we first report the discovery of half-integer Shapiro steps in MgB_(2)focused He ion beam(He-FIB)Josephson junctions.The half-integer steps'dependence on microwave frequency,temperature,microwave power,and magnetic field is also analyzed.We find that the existence of half-integer steps can be controlled by the magnetic field periodically,which is similar to that of high temperature superconductor(HTS)grain boundary junctions,and the similarity of the microstructures between gain boundary junctions and He-FIB junctions is discussed.As a consequence,we mainly attribute the physical origin of half-integer steps in MgB_(2)He-FIB junctions to the model that a He-FIB junction is analogous to a parallel junctions'array.Our results show that He-FIB technology is a promising platform for researching CPR in junctions made of different superconductors.

Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

Crossed Molecular Beam Study of H＋CH4 and H＋CD4 Reactions： Vibrationally Excited CH3/CD3 Product Channels

We study the H＋CH4/CD4-＋H2/HD＋CH3/CD3 reactions using the time sliced velocity map ion imaging technique. Ion images of the CH3/CD3 products were measured by the （2＋1） resonance enhanced multi-photon ionization （REMPI） detection method. Besides the CH3/CD3 products in the ground state, ion images of the vibrationally excited CH3/CD3 products were also observed at two collision energies of 0.72 and 1.06 eV. It is shown that the angular distribution of the products CH3/CD3 in vibrationally excited states gradually vary from backward scattering to sideways scattering as the collision energy increases. Compared to the CH3/CD3 products in the ground state, the CH3/CD3 products in vibrationally excited states tend to be more sideways scattered, indicating that larger impact parameters play a more important role in the vibrationally excited product channels.

Preliminary Studies on Base Substitutions and Repair of DNA Mismatch Damage Stimulated by Low Energy N^+ Ion Beam Implantation in Escherichia coli

Ever since the low energy N+ ion beam has been accepted that the mutation effects of ionizing radiation are attributed mainly to direct or indirect damage to DNA. Evidences based on naked DNA irradiation in support of a mutation spectrum appears to be consistent, but direct proof of such results in vivo are limited. Using mutS, dam and/or dcm defective Eschericha coli imitator strains, an preliminary experimental system on induction of in vivo mutation spectra of low energy N+ ion beam has been established in this study. It was observed that the mutation rates of rifampicin resistance induced by N+ implantation were quite high, ranging from 9.2 x 10~8 to 4.9× 10~5 at the dosage of 5.2×1014 ions/cm2. Strains all had more than 90-fold higher mutation rate than its spontaneous mutation rate determined by this method. It reveals that base substitutions involve in induction of mutation of low energy nitrogen ion beam implantation. The mutation rates of mutator strains were nearly 500-fold (GM2929), 400-fold (GM5864) and 6-fold larger than that of AB1157. The GM2929 and GM5864 both lose the ability of repair DNA mismatch damage by virtue of both dam and dcm pathways defective (GM2929) or failing to assemble the repair complex (GM5864) respectively. It may explain the both strains had a similar higher mutation rate than GM124 did. It indicated that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N+ implantation. The further related research were also discussed.

Uniformity Control of Scanned Beam in 300 MeV Proton and Heavy Ion Accelerator Complex at SESRI

In recent years,heavy ion accelerator technology has been rapidly developing worldwide and widely applied in the fields of space radiation simulation and particle therapy.Usually,a very high uniformity in the irradiation area is required for the extracted ion beams,which is crucial because it directly affects the experimental precision and therapeutic effect.Specifically,ultra-large-area and high-uniformity scanning are crucial requirements for spacecraft radiation effects assessment and serve as core specification for beamline terminal design.In the 300 MeV proton and heavy ion accelerator complex at the Space Environment Simulation and Research Infrastructure(SESRI),proton and heavy ion beams will be accelerated and ultimately delivered to three irradiation terminals.In order to achieve the required large irradiation area of 320 mm×320 mm,horizontal and vertical scanning magnets are used in the extraction beam line.However,considering the various requirements for beam species and energies,the tracking accuracy of power supplies(PSs),the eddy current effect of scanning magnets,and the fluctuation of ion bunch structure will reduce the irradiation uniformity.To mitigate these effects,a beam uniformity optimization method based on the measured beam distribution was proposed and applied in the accelerator complex at SESRI.In the experiment,the uniformity is successfully optimized from 75%to over 90%after five iterations of adjustment to the PS waveforms.In this paper,the method and experimental results were introduced.

Isothermal hydrogen absorption process of Pd-capped Mg films traced by ion beam techniques and optical methods

Pd-capped nanocrystalline Mg films were prepared by electron beam evaporation and hydrogenated under isothermal conditions to inves-tigate the hydrogen absorption process via ion beam techniques and in situ optical methods.Films were characterized by different techniques such as X-ray diffraction(XRD)and scanning electron microscopy(SEM).Rutherford backscattering spectrometry(RBS)and elastic recoil detection analysis(ERDA)provided a detailed compositional depth profile of the films during hydrogenation.Gas-solid reaction kinetics theory applied to ERDA data revealed a H absorption mechanism controlled by H diffusion.This rate-limiting step was also confirmed by XRD measurements.The diffusion coefficient(D)was also determined via RBS and ERDA,with a value of(1.1±0.1)·10^(−13)cm^(2)/s at 140℃.Results confirm the validity of IBA to monitor the hydrogenation process and to extract the control mechanism of the process.The H kinetic information given by optical methods is strongly influenced by the optical absorption of the magnesium layer,revealing that thinner films are needed to extract further and reliable information from that technique.

In situ luminescence measurements of GaN/Al_(2)O_(3) film under different energy proton irradiations

Ion beam-induced luminescence(IBIL) experiments were performed to investigate the in situ luminescence of GaN/Al_(2)O_(3) at varying ion energies,which allowed for the measurement of defects at different depths within the material.The energies of H^(+)were set to 500 keV,640 keV and 2 MeV,the Bragg peaks of which correspond to the GaN film,GaN/Al_(2)O_(3) heterojunction and Al_(2)O_(3) substrate,respectively.A photoluminescence measurement at 250 K was also performed for comparison,during which only near band edge(NBE) and yellow band luminescence in the GaN film were observed.The evolution of the luminescence of the NBE and yellow band in the GaN film was discussed,and both exhibited a decrease with the fluence of H^(+).Additionally,the luminescence of F centers,induced by oxygen vacancies,and Cr^(3+),resulting from the ^(2)E →^(4)A_(2) radiative transition in Al_(2)O_(3),were measured using 2 MeV H^(+).The luminescence intensity of F centers increases gradually with the fluence of H^(+).The luminescence evolution of Cr^(3+)is consistent with a yellow band center,attributed to its weak intensity,and it is situated within the emission band of the yellow band in the GaN film.Our results show that IBIL measurement can effectively detect the luminescence behavior of multilayer films by adjusting the ion energy.Luminescence measurement can be excited by various techniques,but IBIL can satisfy in situ luminescence measurement,and multilayer structural materials of tens of micrometers can be measured through IBIL by adjusting the energy of the inducing ions.The evolution of defects at different layers with ion fluence can be obtained.

Electron beam ion traps and their applications

A brief introduction to the historical background and current status of electron beam ion traps (EBITs)is presented. The structure and principles of an EBIT for producing highly charged ions are described. Finally,EBITs as a potential tool in hot-plasma diagnostics and in studying frontier problems of highly charged ion physicsare discussed.

Helium-ion-beam nanofabrication: extreme processes and applications

Helium ion beam(HIB)technology plays an important role in the extreme fields of nanofabrication.This paper reviews the latest developments in HIB technology as well as its extreme processing capabilities and widespread applications in nanofabrication.HIB-based nanofabrication includes direct-write milling,ion beam-induced deposition,and direct-write lithography without resist assistance.HIB nanoscale applications have also been evaluated in the areas of integrated circuits,materials sciences,nano-optics,and biological sciences.This review covers four thematic applications of HIB:(1)helium ion microscopy imaging for biological samples and semiconductors;(2)HIB milling and swelling for 2D/3D nanopore fabrication;(3)HIB-induced deposition for nanopillars,nanowires,and 3D nanostructures;(4)additional HIB direct writing for resist,graphene,and plasmonic nanostructures.This paper concludes with a summary of potential future applications and areas of improvement for HIB extreme nanofabrication technology.

COMPETING REACTIONS OF EXISTING Ni SILICIDE AND Ni OR Si INDUCED BY THERMAL ANNEALING AND MeV Si ION BEAM MIXING

The competing reactions between existing Ni silicides surrounded by Si and Ni were investigated by thermal annealing and MeV Si ion beam mixing. With high energy irradiation, the energy deposition at both interfaces, Ni/Ni silicide and Ni silicide/Si, is equal. Two MeV He^- RBS and TEM were used to obtain the reacted layer composition and epitaxial orientation, respectively. Also glancing angle Co K_a. X-ray diffraction was utilized to identify phase formation. The main results indicate that the existing silicides preferentially react with Ni layer, and that there are pronounced differences of Ni silicide phase transition between thermal annealing and MeV Si ion beam mixing, even though the mixing was performed in radiation enhanced diffusion regime. The results can be explained in term of the heat of silicide formation and surface energy change.

Determination of Kinetic Parameters and Metal Ions in Urea-Urease System Based on the Biochemical Reaction Heat Induced Laser Beam Deflection

A new analytical method for the determination of urea-urease system based on biochemical reaction heat induced laser beam deflection is presented in this paper. With the method, the Michaelis constant (K-m) of urease and apparent inhibition constant (K-i) of some metal ion inhibitors were measured respectively. This method was also used for the quantitative determination of metal ions with satisfactory result.

Nonplanar dust acoustic solitary and rogue waves in an ion beam plasma with superthermal electrons and ions

The propagation characteristics of dust acoustic solitary and rogue waves are investigated in an unmagnetized ion beam plasma with electrons and ions following kappa-type distribution in nonplanar geometry. The reductive perturbation method （RPM） is employed to derive the cylindrical/spherical Korteweg-de Vries （KdV） equation, which is further transformed into standard KdV equation by neglecting the geometrical effects. Using new stretching coordinates, nonlinear Schrrdinger equation （NLSE） has been derived from the standard KdV equation to study the different order rational solutions of dust acoustic rogue waves （DARWs）. The impact of various physical parameters on the characteristics of dust acoustic solitary waves （DASWs） is elaborated specifically in nonplanar geometry. Further, the effects of ion beam and superthermality of electrons/ions on the characteristics of DARWs are studied. The results obtained in the present investigation may be useful in comprehending a variety of phenomena in Earth＇s magnetosphere polar cap region where the presence of positive ion beam has been detected and also in other regions of space/astrophysical environments where dust along with superthermal electrons and ions exists.

Effect of Ar Ion Beam Implantation on Morphological and Physiological Characteristics of Liquorice(Glycyrrhiza uralensis Fisch)Under Short-Term Artificial Drought Conditions

Ar^＋ ion beam with low energy of 30 keV was implanted into liquorice （Glycyrrhiza uralensis Fisch） seeds at the doses of 0, 600, 900 and 1200 × （2.6 × 10^13） ions/cm^2, respectively. The seeds were sowed in pots and after one month the plants were subjected to different drought conditions for two months. Then the plants＇ morphological and physiological characteristics, antioxidation enzymes and levels of endogenous hormones were investigated. The results showed that ion implantation at a proper dose can greatly enhance the liquorice seedlings＇ resistance against drought stress.

Generation and Detection of a Directed Monoenergetic Neutrino Beam with Hydrogen-Like Ions

We consider two possible schemes for generation and detection of a monoenergetic directed beam of neutrinos which may have application to neutrino communication. First, we consider generation of a directed neutrino beam using electron capture beta decay in hydrogen-like ions. Next, we suggest detection of a directed neutrino beam using resonant absorption of a neutrino by a bare nucleus with the generation of a bound electron. This reaction is inverse to electron capture beta decay, and we call it “Bound State Inverse Beta Decay (BSIBD)”. We show that the recoil effect can be eliminated by an appropriate choice of velocities for the ions and bare nuclei. Finally, we consider a combination of a solid state source of a directed mono-energetic neutrino beam and its detection using BSIBD.

Evidence for Base Substitutions and Repair of DNA Mismatch Damage Induced by Low Energy N^+ Ion Beam Implantation in E. coli

Ever since the low energy N + ion beam has been accepted, the mutations of ionizing radiation are attributable mainly to avoidance of DNA damages repair. Evidences based on in vivo proof results are limited. Using the E.coli wild type and mutator strains, the mutant frequencies suggest that base substitutions in rpoB gene are induced by the N + implantation. A highly conserved region is selected to get the direct evidence for base substitutions by sequence of the high fidelity PCR amplification products in mutants. Most of the mutants (90.9%, 40/44) have at least one base substitution in the amplification region. The evidences for CG to TA (55%, 22/40), AT to GC (20%, 8/40) and TA to CG (5%, 2/40) transitions are identified. The transversions are AT to TA (15%, 6/40) and GC to CG (5%, 2/40). It is suggested that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N + implantation by analysis of the mutant frequencies of mutator strains.

3-35 ISSR Assay of M2 Mutants of Lotus japonicus Induced by Carbon Ion Beam Irradiations

To investigate the DNA polymorphism of M2 plants of Lotus japonicus induced by heavy ion beam, dry seeds were irradiated by carbon ion beams accelerated by Heavy Ion Research Facility in Lanzhou (HIRFL). Inter simple sequence repeat (ISSR) assay were utilized to explore the DNA variation of M2 plants irradiated by 400 Gy carbon ion beams. ISSR technique is an effective molecular marker method based on polymerase chain reaction amplification of template DNA by a single primer with 1626 bp[1]. ISSR can detect the differences of genetic structure of various life materials rapidly.

Charge Breeding Simulations in a Hollow Electron Beam

Charge breeding technique is used for RIB （radioactive ion beam） production in order of optimizing the re-acceleration of the radioactive isotopes produced by a primary beam in a thick target. Charge breeding is achieved by means of a device capable of increasing the ion charge state from 1＋ to a desired value n＋. In some experiments, a continuous RIB of a given energy may be required. To reach this goal, a charge breeding device based on a hollow gun EBIS （electron beam ion source） has been proposed by the author recently. That EBIS, in principle, can be capable to realize a CW （continuous wave） operation. A sufficiently high focusing magnetic field could reduce to zero the hole radius in the EBIS electron beam. However, a smaller efficiency in the ion charge state increase should be expected. A code developed for studying the ion selective containment in a EBIS has been modified and used to simulate the ion charge state breeding. The effects of the hollow electron beam on the breeding rate have been studied.

Screening of Biocontrol Strain Bacillus subtilis by N^+ Ion Beam Implantation

[Objective] This study was to investigate the effect of N＋ ion beam implantation on the survival rate and mutation rate of biocontrol strain Bacillus subtilis. [Method] The factors influencing B. subtilis ion beam implantation, including culture time, dilution concentration, solvent, drying time of mycoderm were optimized. B. subtilis cells were implanted by using ion beam at dose of 2.0×10^14～4.0×10^14 ions/cm2 and the energy of 30 kev. Then the methods of culturing colonies confronting each other on plate and Oxford cup diffusion were used to screening strains. [Result] The optimal parameters were found as follows： culture in liquid for 20-24 h, dilution with sterile water to 106 cells/ml and drying time of 60 min for sample preparation; the optimal N＋ ion beam implantation dose of 2.0×10^14～4.0×10^14 ions/cm2 at the energy of 30 kev, the survival rate of 8.43%-26.71% and the mutation rate of 3.50%-5.43%. [Conclusion] This study provided reference for ion beam implantation mutation of B. subtilis.

Preliminary Study on the Low Energy Ion Beam Mediated Parameters with Fractional Factorial Design Method

[Objective] The aim was to explore the biological effect of low energy ion beam mediated parameters with fractional factorial design method. [Method] The twin-embryos seed of autotetraploid rice DER10-04-01 was taken as the receptor material,and the Elymus dahuricus Turcz. was used as materials to provide DNA to carry out the ion beam mediated experiment. And the fractional factorial design method was used to study the parameters of low enery N＋ ion beam mediated foreign genes into rice. [Result] The implantation energy,dose,DNA concentrations and immersion time of DNA showed significant biological effects on the normal growth and development of DER10-04-01,in which the biological effects of implantation dose and DNA concentrations were relatively obvious. [Conclusion] The implantation energy,dose,DNA concentrations and immersion time of DNA were major factors showing important effects on the experimental result in ion beam mediated foreign genetic materials.

High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.