Suppression of oxygen and carbon impurity deposition in the thermal system of Czochralski monocrystalline silicon

When preparing large monocrystalline silicon materials,severe carbon etching and silicide deposition often occur to the thermal system.Therefore,a suppression method that optimizes the upper insulation structure has been proposed.Assisted by the finite element method,we calculated temperature distribution and carbon deposition of heater and heat shield,made the rule of silicide and temperature distributing in the system,and we explained the formation of impurity deposition.Our results show that the optimized thermal system reduces carbon etching loss on heat components.The lowered pressure of the furnace brings a rapid decrease of silicide deposition.The increase of the argon flow rate effectively inhibits CO and back diffusion.The simulated results agree well with the experiment observations,validating the effectiveness of the proposed method.

Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efflciency and Low-Cost Solar Cells

To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.

Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. Experiments of ion implar, tation, nanoindentation, nano-scratching and nanometric cutting were carried out to verify the simulation results.

Study of Thermal Radiation Properties of Pyrolytic Carbon Protective Coatings for Monocrystalline Silicon Furnace

The thermal radiation properties of pyrolytic carbon(PyC)protective coatings for monocrystalline silicon furnace prepared by different processes were tested.The changes of normal emissivity of carbon materials caused by PyC protective coatings were discussed,and the influence of phase structure and surface appearance on the thermal radiation properties was investigated.The results show that the thermal radiation properties of PyC protective coatings with the wave band of 5-25μm are better than C/C substrate,further,normal spectral emissivity of CVD PyC coating remains basically at 0.85-0.90,and the normal total emissivity can reach0.89,which shows high thermal radiation performance.For resin PyC coating and CVD PyC coating,the degree of graphitization are 44.53%and 16.28%respectively,and the R value of Raman spectrum are 0.964and 1.384 respectively.Relatively disorder graphite structure of the latter causes various vibration modes,and the spectral emissivity is better,so the thermal radiation property of CVD PyC coating is excellent.A lot of spherical particles exists on the surface of the CVD PyC coating,and the more interface and spacing of particles reduce the number of particles per unit volume.Therefore,the scattering of thermal radiation is strongly strengthened,and the spectral emissivity is higher.

Soil Pressure Mini-sensor Made of Monocrystalline Silicon and the Measurement of Its Sensitivity Coefficient

A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device.The experimental result shows that the soil pressure min-sensor made of the monocrystalline silicon（SPMMS）is proved to be good linear,high precision and less that can fetch precise data in low pressure range even near by O point,which guarantees the reliability of the soil pressure test in geotechnical engineering.

A hybrid chemical modification strategy for monocrystalline silicon micro-grinding:Experimental investigation and synergistic mechanism

For high performance manufacturing of micro parts and features,a hybrid chemical modification strategy is proposed to decrease critical energy barrier of mechanical removal of hard and brittle crystal material by refining localized machining condition.The strategy,namely UVlight and IR-laser hybrid chemical modification(UVIR-CM)strategy,includes two steps,an ultraviolet light(UV-light)catalytic advanced oxidation and an infrared laser(IR-laser)assisted selective modification based on Fenton liquid–solid reaction for monocrystalline silicon.The modification effects of UVIR-CM strategy were investigated by surface morphology micro-observation,crosssection transmission electron microscopy(TEM)observation,Raman spectroscopy analysis and nanoindentation test.Experimental results demonstrated that varied degrees of laser texturing appeared on different strategy samples’IR-laser scanned area.And the IR-laser thermal damage has been successfully inhibited due to the refraction and reflection of energy by bubbles in liquid medium.But for the UVIR-CM strategy,a uniform and amorphous silicate layer is detected in a certain boundary.The UV-light promotes oxidation cycle ability of the chemical solution and ensures sufficient oxide modified layer for subsequent step.Attributing to synergism of photochemical,photothermal and kinetic effects induced by IR-laser,the modified layer displays layered structure with about 600 nm thickness,(2.7±0.60)GPa nanohardness,and(93.7±22.9)GPa indentation modulus.And the layered structure is amorphous layer,nanocrystal and micro-twins layer from the surface to the interior of sample.Consequently,it reveals that the subsequent mechanical removal will become easy due to decreasing energy barrier of monocrystalline silicon in selective area.Meanwhile,its original excellent mechanical properties also are maintained under a certain depth.The results contribute to develop a novel combined micro-machining technology to achieve collaborative manufacturing of structure shape and surface integrity for micro parts and feature.

Novel method for detection of anomalous structure characteristics of ID precision ultrathin monocrystalline silicon section cutting tool

The structure characteristics of ID precision ultrathin monocrystalline silicon section cutting machine tool spindle with force monitoring bearings functioning as force measuring sensors were detected with the new Hilbert theory based signal wave envelope detection method, presented to replace the conventional hardware device in order to ensure that the signal is measured online with high fidelity. According to the probability of anomalous incidents in the cutting process, a mathematical recognition model has been designed and verified on an STC 22ID machine.

Mechanical research and development of a monocrystalline silicon neutron beam window for CSNS

The monocrystalline silicon neutron beam window is one of the key components of a neutron spectrom- eter. Monocrystalline silicon is brittle and its strength is generally described by a Weibull distribution due to the material inhomogeneity. The window is designed not simply according to the mean strength but also according to the survival rate. The total stress of the window is stress-linearized into a combination of membrane stress and bending stress by finite element analysis. The window is a thin circular plate, so bending deformation is the main cause of failure and tensile deformation is secondary and negligible. Based on the Weibull distribution of bending strength of monocrystalline silicon, the optimized neutron beam window is designed to be 1.5 mm thick. Its survival rate is 0.9994 and its transmittance is 0.98447, which meets both physical and mechanical requirements.

Modeling and Simulation of Heterojunction Solar Cell with Mono Crystalline Silicon

The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (Voc) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained VOC in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (VOC), the short circuit current (JSC), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).

Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact configuration for the efficiency beyond 24% based on mass production technology

Mono-crystalline silicon solar cells with a passivated emitter rear contact(PERC)configuration have attracted extensive attention from both industry and scientific communities.A record efficiency of 24.06%on p-type silicon wafer and mass production efficiency around 22%have been demonstrated,mainly due to its superior rear side passivation.In this work,the PERC solar cells with a p-type silicon wafer were numerically studied in terms of the surface passivation,quality of silicon wafer and metal electrodes.A rational way to achieve a 24%mass-production efficiency was proposed.Free energy loss analyses were adopted to address the loss sources with respect to the limit efficiency of 29%,which provides a guideline for the design and manufacture of a high-efficiency PERC solar cell.

Absorption measurement of optical thin films under high power density with a Closed Cavity

A Closed Cavity measuring platform is built on the basis of a 1000 W-class direct current （DC）-discharge drived con- tinuous-wave （CW） HF/DF chemical laser. On this platform, the absorption coefficients of optical thin films coated on the surfaces of monocrystalline silicon substrates, at the wavelength of 3.6-4.1 μm, is measured, when the power density on the surfaces of optical thin films reaches about 3.16 kW/cm^2. The measuring principle and structure of the Closed Cavity is introduced. The temperature curves and balanced temperature rises of the film-suN strate systems under test measured through the experiment is presented in this Letter. The experiments show high reliability, good repeatability and strong practicality. The Closed Cavity measuring platform is applicable for not only absorption measurement but other performance measurement of optical thin films under high power density.