A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latc...A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latching.These behaviors have been demonstrated by simulating experiments and circuit simulation.Furthermore,basing on photo-current latching behavior,various photo-controlled basis logic elements such as delayed flip-flop (DFF) can be designed and fabricated.展开更多
A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device...A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD（resonant tunneling diode） in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.展开更多
文摘A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latching.These behaviors have been demonstrated by simulating experiments and circuit simulation.Furthermore,basing on photo-current latching behavior,various photo-controlled basis logic elements such as delayed flip-flop (DFF) can be designed and fabricated.
基金supported by the National Natural Science Foundation of China(Nos.60536030,60502005)the National High Technology Research and Development Program of China(Nos.2007AA01Z2A5,2006AA01Z239,2007AA03Z454).
文摘A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD（resonant tunneling diode） in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.
