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Improvement of Surface Morphology of Yttrium-Stabilized Zirconia Films Deposited by Pulsed Laser Deposition on Rolling Assisted Biaxially Textured Substrate Tapes
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作者 王梦麟 刘林飞 李贻杰 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第11期101-105,共5页
The surface morphology of buffer layer yttrium-stabilized zirconia (YSZ) of YBa2CuaO7-σ (YBCO) high temperature superconducting films relies on a series of controllable experimental parameters. In this work, we f... The surface morphology of buffer layer yttrium-stabilized zirconia (YSZ) of YBa2CuaO7-σ (YBCO) high temperature superconducting films relies on a series of controllable experimental parameters. In this work, we focus on the influence of pulsed laser frequency and target crystalline type on surface morphology of YSZ films deposited by pulsed laser deposition (PLD) on rolling assisted biaxially textured substrate tapes. Usually two kinds of particles are observed in the YSZ layer: randomly distributed ones on the whole film and self-assembled ones along grain boundaries. SEM images are used to prove that particles can be partly removed when choosing dense targets of single crystalline. Lower frequency of pulsed laser also contributes to a smoother film surface. TEM images are used to view the crystalline structure of thin film. Thus we can obtain a basic understanding of how to prepare a particle-free YSZ buffer layer for YBCO in optimized conditions using PLD. The YBCO layer with nice structure and critical current density of around 5 MA/cm2 can be reached on smooth YSZ samples. 展开更多
关键词 YSZ Improvement of surface morphology of Yttrium-Stabilized Zirconia Films Deposited by Pulsed Laser Deposition on Rolling Assisted Biaxially Textured Substrate Tapes PLD
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Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In_(0.5)Ga_(0.5)As/GaAs quantum dots grown by molecular beam epitaxy 被引量:2
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作者 魏全香 任正伟 +1 位作者 贺振宏 牛智川 《Chinese Optics Letters》 SCIE EI CAS CSCD 2009年第1期52-55,共4页
Evolution of surface morphology and optical characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photolumine... Evolution of surface morphology and optical characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [120] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs. 展开更多
关键词 GAAS As/GaAs quantum dots grown by molecular beam epitaxy Evolution of surface morphology and photoluminescence characteristics of 1.3 GA m In QDs
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