期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Double linear strain distribution assumption of RC beam strengthened with external-bonded or near-surface mounted fiber reinforced plastic 被引量:4
1
作者 任振华 刘汉龙 周丰峻 《Journal of Central South University》 SCIE EI CAS 2012年第12期3582-3594,共13页
Rehabilitation of existing structures with fiber reinforced plastic(FRP)has been growing in popularity because they offer superior performance in terms of resistance to corrosion and high specific stiffness.The strain... Rehabilitation of existing structures with fiber reinforced plastic(FRP)has been growing in popularity because they offer superior performance in terms of resistance to corrosion and high specific stiffness.The strain coordination results of 34 reinforced concrete beams(four groups)strengthened with different methods were presented including external-bonded or near-surface mounted glass or carbon FRP or helical rib bar in order to study the strain coordination of the strengthening materials and steel rebar of RC beam.Because there is relative slipping between concrete and strengthening materials(SM),the strain of SM and steel rebar of RC beam satisfies the double linear strain distribution assumption,that is,the strain of longitudinal fiber parallel to the neutral axis of plated beam within the scope of effective height(h0)of the cross section is in direct proportion to the distance from the fiber to the neutral axis.The strain of SM and steel rebar satisfies the equation εGCH=βεsteel,where the value of β is equal to 1.1-1.3 according to the test results. 展开更多
关键词 double linear strain distribution assumption external-bonded structure near-surface mounted structure fiber reinforced plastic strengthening concrete beam
下载PDF
Effect of optical illumination on DDR IMPATT diode at 36 GHz
2
作者 Atanu Banerjee M.Mitra 《Journal of Semiconductors》 EI CAS CSCD 2017年第11期48-54,共7页
A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, G... A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted(TM) and flip chip(FC) configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode. 展开更多
关键词 optical modulation flip chip structure top mounted structure window frequency DDR IMPATT diode
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部