Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

Effects of microwave pulse-width damage on a bipolar transistor

This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method.A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out.By means of a two-dimensional simulator,ISE-TCAD,the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively.The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different,while only one hot spot exists under the injection of dc pulses.The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy,respectively.The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.

The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

BIPOLAR PULSED PECVD OF ALUMINA HARD COATINGS

In the last years a variety of plasma sources have been developed for filmdeposition by plasma activated deposition techniques. In addition to RF- and DC-sources, pulsedplasma sources are gaining increased attention. This interest is driven by the wish of depositingcoatings with superior properties as compared to those deposited by conventional techniques. Oneprominent example of coatings that are significantly enhanced by the usage of pulsed plasmas isalumina. Although crystalline o-alumina can be deposited by thermal CVD at temperatures above 1000deg C for two decades, no process for the deposition of crystalline alumina on heat sensitivesubstrates like tempered steels at low temperatures is commercially available up to now. In thispaper, the deposition of alumina films from gaseous mixtures of AlCl_3-N_2-H_2-Ar in a bipolarpulsed glow discharge at about 500 deg C is reported. Special attention was paid on the correlationbetween plasma characteristics and film properties. The measurements revealed that the properties ofthe resulting coatings were significantly influenced by the characteristics of the power supply.Depending on the gas composition and the plasma parameters, alumina films with high hardness andgood adhesion were deposited.

Depolarization field in relaxor-based ferroelectric single crystals under one-cycle bipolar pulse drive

The [001]c-polarized(1-x)Pb(Mg1/3Nb2/3)O3–xPbTiO3(PMN-PT) single crystals are widely used in ultrasonic detection transducers and underwater acoustic sensors. However, the relatively small coercive field( 2 kV/cm) of such crystals restricts their application at high frequencies because the driving field will exceed the coercive field. The depolarization field can be considerably larger in an antiparallel direction than in a parallel direction with respect to polarization when the bipolar driving cycle starts. Thus, if the direction of the sine wave signal in the first half cycle is opposite to the polarization direction, then the depolarized domains can be repolarized in the second half of the sine cycle. However, if the direction of the sine wave signal in the first half of the cycle is along the polarization direction, then the change is negligible,and the domains switched in the second half of the sine cycle cannot be recovered. The design of electric driving method needs to allow the use of a large applied field to emit strong enough signals and produce good images. This phenomenon combined with the coercive field increases with the driving frequency, thereby making the PMN-PT single crystals usable for high-frequency applications. As such, the applied field can be considerably larger than the conventionally defined coercive field.

Discharge Characteristics of Series Surface/Packed-Bed Discharge Reactor Diven by Bipolar Pulsed Power

The discharge characteristics of the series surface/packed-bed discharge （SSPBD） reactor driven by bipolar pulse power were systemically investigated in this study. In order to evaluate the advantages of the SSPBD reactor, it was compared with traditional surface discharge （SD） reactor and packed-bed discharge （PBD） reactor in terms of the discharge voltage, discharge current, and ozone formation. The SSPBD reactor exhibited a faster rising time and lower tail voltage than the SD and PBD reactors. The distribution of the active species generated in differ- ent discharge regions of the SSPBD reactor was analyzed by optical emission spectra and ozone analysis. It was found that the packed-bed discharge region （3.5 mg/L）, rather than the surface discharge region （1.3 mg/L） in the SSPBD reactor played a more important role in ozone gener- ation. The optical emission spectroscopy analysis indicated that more intense peaks of the active species （e.g. N2 and OI） in the optical emission spectra were observed in the packed-bed region.

Comparison of performance between bipolar and unipolar double-frequency sinusoidal pulse width modulation in a digitally controlled H-bridge inverter system

By deriving the discrete-time models of a digitally controlled H-bridge inverter system modulated by bipolar sinu- soidal pulse width modulation （BSPWM） and unipolar double-frequency sinusoidal pulse width modulation （UDFSPWM） respectively, the performances of the two modulation strategies are analyzed in detail. The circuit parameters, used in this paper, are fixed. When the systems, modulated by BSPWM and UDFSPWM, have the same switching frequency, the stabil- ity boundaries of the two systems are the same. However, when the equivalent switching frequencies of the two systems are the same, the BSPWM modulated system is more stable than the UDFSPWM modulated system. In addition, a convenient method of establishing the discrete-time model of piecewise smooth system is presented. Finally, the analytical results are confirmed by circuit simulations and experimental measurements.

Degradation of phenol using a combination of granular activated carbon adsorption and bipolar pulse dielectric barrier discharge plasma regeneration

A combined method of granular activated carbon（GAC） adsorption and bipolar pulse dielectric barrier discharge（DBD） plasma regeneration was employed to degrade phenol in water.After being saturated with phenol,the GAC was filled into the DBD reactor driven by bipolar pulse power for regeneration under various operating parameters.The results showed that different peak voltages,air flow rates,and GAC content can affect phenol decomposition and its major degradation intermediates,such as catechol,hydroquinone,and benzoquinone.The higher voltage and air support were conducive to the removal of phenol,and the proper water moisture of the GAC was 20%.The amount of H2 O2 on the GAC was quantitatively determined,and its laws of production were similar to phenol elimination.Under the optimized conditions,the elimination of phenol on the GAC was confirmed by Fourier transform infrared spectroscopy,and the total removal of organic carbons achieved 50.4%.Also,a possible degradation mechanism was proposed based on the HPLC analysis.Meanwhile,the regeneration efficiency of the GAC was improved with the discharge treatment time,which attained 88.5% after 100 min of DBD processing.

A Study of Removing Chlorobenzene by the Synergistic Effect of Catalysts and Dielectric-Barrier Discharge Driven by Bipolar Pulse-Power

In this study, the improvement in the removal of chlorobenzene （C6H5Cl） in the air was investigated by combining dielectric barrier discharge （DBD） driven by bipolar pulse-power with catalysts. Molecular sieve 4A （MS-4A） and MnO2/γ-Al2O3 （MnO2/ALP） as two kinds of catalysts were tested at different positions in a DBD reactor. Catalysts were located either in the discharging area between two electrodes, or just behind the discharging area （in the afterglow area） closed to the outlet. The results indicated that DBD reactor with a bipolar pulse power-supply produced strong instant discharge and energetic particles, which can effectively activate catalysts of MS-4A and MnO2/ALP located in the afterglow area to achieve the synergistic effects on effective fission of chemical bonds of chlorobenzene. It was considered that the gas-chlorobenzene and the chlorobenzene adsorbed on the catalysts were decomposed simultaneously.

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Preparation of Thin Films by a Bipolar Pulsed-DC Magnetron Sputtering System Using Ca₃Co₄O₉and CaMnO₃Targets

The thin films were deposited on the glass substrates by an asymmetric bipolar pulsed-dc magnetron sputtering system using the Ca3Co4O9 and CaMnO3 Targets (n-type) targets of 60 mm diameter and 2.5 mm thickness. The targets were prepared from powder precursors, which obtained by a solid state reaction. Optical emissions from plasmas during sputter depositions of films were detected using a high resolution spectrometer. Thickness of thin film was estimated by Tolansky’s Fizeau fringe method and ellipsometic measurement. Crystal structures were studied from X-ray diffraction. The thermoelectric properties were assessed from Seebeck coefficient and electrical resistivity measurements at room temperature. The power factors were calculated. It was found that the optical emission spectrums showed that the Ca, Mn, Co and O atoms were sputtered from the targets onto glass substrates. As-deposited Ca-Co-O and Ca-Mn-O films thickness values were 0.435 ?m and 0.449 ?m, respectively. The X-ray diffraction patterns clearly showed amorphous nature of the as-deposited films. Determining thermoelectric properties of Ca-Co-O film gave Seebeck coefficient of 0.146 mV/K, electrical resistivity of 0.473Ω.cm, and power factor of 4.531 μW/m?K at room temperature. Ca-Mn-O film baring a high resistance was not the experimental determination of thermoelectric properties.

Spectral Calculation of the Output Voltage of an Inverter with Bipolar Pulse Width Modulation

Converters with pulse width modulation are used for connections between the direct current （DC） and alternating current （AC） networks, e.g., in uninterrupted power supply systems, AC electromotor drives, for powering induction furnaces, in audio technique. Spectrum of signals sampled by pulse amplitude modulation and output voltage spectrum of the converter with pulse width modulation have similar properties. Spectrum of signals sampled by pulse amplitude modulation contains a harmonic of frequency equal to the frequency of the modulating signal and the harmonics of frequencies equal to the sum of frequency of the modulating signal and multiples of the sampling frequency. The output voltage spectrum of the converter with bipolar pulse width modulation contains harmonic of frequency equal to the frequency of the modulating signal and harmonics of frequencies equal to sum of the frequency of the modulating signal and multiples of the frequency of the carrier signal. It also contains harmonics of frequencies equal to the sum of the multiples of the frequency of the modulating signal and the multiples of the carrier signal. The comparison analysis was carried out for the harmonics of the output voltage of the converter with bipolar pulse width modulation in time domain. The dependency of the amplitudes and frequency spectrum on the wave forms of the carrier signal and modulating signal was shown. Similarity of the output voltage spectrum of the converter and signal spectrum sampled by the pulse width modulation was also shown. Key words： Output voltage converter with bipolar pulse width modulation, spectral analysis, Fourier series, carrier signal, reference signal.

优路铥激光结合曲安奈德腔内注射治疗尿道吻合术失败病例的疗效观察

目的:探讨优路铥激光结合曲安奈德腔内注射治疗尿道吻合术失败病例的临床经验。方法:回顾性分析2018年1月至2023年12月收治的盆腔骨折尿道牵张性缺损(PFUDD)男性患者。共纳入尿道吻合术失败患者35例,根据内切开能量平台分别为优路铥激光和等离子组。所有患者均在直视下尿道狭窄内切开术,并予以曲安奈德腔内局部注射,记录年龄、狭窄长度、手术时间、术前最大尿流率、术后最大尿流率、术后并发症以及狭窄复发情况。结果:所有患者均顺利完成所有治疗,两组患者在年龄、狭窄长度、手术时间、并发症率及狭窄复发率上均无统计学差异(P>0.05)。铥激光组和等离子组中位随访时间分别为21.0个月(IQR 16.0~24.0)和21.0个月(IQR 17.0~25.0),术前和术后12个月的最大尿流率均有显著差异(P<0.01)。两组无复发生存期无统计学差异(P=0.398)。结论:优路铥激光尿道内切开结合曲安奈德腔内局部注射在短期内可有效维持尿道狭窄瘢痕的稳定,保持良好的尿道通畅性。与传统等离子内切开相比,该策略术后并发症率较低,具有操作简单、安全、并发症少、疗效可靠等特点,可作为PFUDD患者吻合术失败后的补救治疗方法。

高频链矩阵变换器直接功率反步控制策略

针对高频链矩阵变换器(HFLMC)电路前后级耦合导致系统动态性能和鲁棒性降低的问题,提出一种基于直接功率的非线性反步控制策略(BS-DPC)。首先,建立HFLMC非线性数学模型和有功、无功功率动态模型,分析双极性电流空间矢量调制策略;然后,在考虑系统不确定性情况下引入2个解耦控制分量,设计直流输出电流和无功功率反步控制器,实现电池不同工况下输出电流参考值的快速跟踪控制;最后,根据李雅普诺夫稳定性理论证明HFLMC闭环系统全局渐进稳定性,并对比传统PI直接功率控制和BS-DPC策略。仿真和实验结果表明,所提BS-DPC策略控制HFLMC提高了输出电流的动态性能和电网波动及直流滤波电感变化下的鲁棒性,响应时间减少了约78%,网侧THD降低了0.98%。

短时程脊髓电刺激与双极脉冲射频治疗带状疱疹后神经痛的临床研究

目的:比较短时程脊髓电刺激(short-term spinal cord stimulation,stSCS)和双极脉冲射频(bipolar pulse radiofrequency,bPRF)治疗带状疱疹后神经痛(postherpetic neuralgia,PHN)的临床疗效。方法:选取2021年9月至2022年12月福建医科大学附属第一医院收治的108例PHN病人为研究对象,按手术方式分为st SCS组(40例)和b PRF组(68例)。采用视觉模拟评分法(visual analogue scale,VAS)、匹兹堡睡眠质量指数(Pittsburgh sleep quality index,PSQI)、焦虑自评量表(self-rating anxiety scale,SAS)和抑郁自评量表(self-rating depression scale,SDS)等指标评估临床疗效。结果:两组病人术后各时间点VAS、PSQI、SAS和SDS评分均较术前(T0)显著降低(P<0.05)。术后6个月(T7)、9个月(T8)、12个月(T9)时st SCS组VAS评分显著低于b PRF组(P<0.05),术后1天(T1)、7天(T2)、14天(T3)、28天(T4)、2个月(T5)、3个月(T6)两组VAS评分无显著差异;T8和T9时st SCS组病人PSQI、SAS和SDS评分显著低于b PRF组(P<0.05),但T1至T7时,这些评分两组之间差异无统计学意义。结论:st SCS组和b PRF组在近期疗效上相当,均可安全有效地治疗PHN。在远期疗效上st SCS组显示出更明显的优势。

高精度固态调制器绝缘栅双极晶体管驱动电路

加法器式固态调制器是一种使用绝缘栅双极晶体管(IGBT)控制储能电容放电来产生脉冲高压的装置,相比传输线型调制器,具有模块化、稳定性好、寿命长等优势。但IGBT的正常工作需要利用栅极驱动电路将控制信号进行放大才能实现,驱动电路的性能直接影响IGBT的开关特性,最终影响脉冲电压质量,尤其是驱动电路的导通抖动指标,这是影响脉冲电压精度的关键因素之一。根据加法器式固态调制器中IGBT的工作特性,以提高脉冲电压精度为目标,对驱动电路进行研究。分析了开关抖动对输出电压精度的影响,介绍了设计原理,研制了驱动电路板,并利用放电模块对其工作性能进行了实验测试。测试结果表明,该款驱动电路的导通抖动为300 ps,相比1 ns的商用驱动电路抖动压缩至1/3,在1 kV充电电压下,放电模块在0.5Ω的负载上放电,形成上升时间为500 ns、导通抖动峰、峰值在5 ns以下的脉冲电压,当发生退饱和故障时,驱动电路能够在4μs时间内关断IGBT,该款驱动电路满足高精度固态调制器的工作要求。

用于液体食品灭菌的双极性方波脉冲电源

为了满足高压脉冲电场(PEF)液体食品灭菌对脉冲电源的特殊要求,该文首先基于传统Marx电路提出了新的拓扑结构,以减少半导体开关的使用数量,设计了用于多样性负载残余电荷的放电回路,通过对双极性脉冲电路中半导体开关导通时序的控制,实现对双极性脉冲波形的陡化,并基于此设计搭建出可供液体食品灭菌实验用的双极性方波脉冲电源;其次,利用OrCAD仿真软件对电路进行可行性分析,验证了电源在阻容性负载下输出波形依然是方波,以及电路的钳位功能;最后,设计并搭建了3级双极性方波脉冲电源的实验样机。测试结果表明,双极性脉冲电源实现了±6 kV、50~500 Hz的高压脉冲输出,输出脉冲宽度达2~20µs,正、负极性脉冲上升沿与下降沿在300ns内。通过设计回路对负载及时放电,显著陡化了脉冲拖尾,具有良好的负载适应性。利用搭建的双极性方波脉冲电源灭菌实验平台对生鸡蛋清进行灭菌实验,结果表明,提高双极性方波脉冲输出的电压幅值、频率和宽度均可以增强对液体食品的灭菌效果,且脉冲电压幅值的提高对灭菌效果的提升更加显著,但脉冲电压幅值、频率和脉冲宽度的提高均会使液体食品温度升高从而导致异常放电,因此需要合理地调控三个参数来控制液体食品的温升以获得更好的灭菌效果。该文可为双极性方波脉冲液体灭菌技术提供理论和技术支持。

感应加热电源的IGBT驱动保护系统设计

为提高感应加热电源的绝缘栅双极型晶体管(IGBT)信号源与保护电路的稳定性,设计了应用于工业化低频大功率感应加热电源设备的IGBT驱动保护系统。系统整体采用复杂可编程逻辑器件(CPLD)+数字信号处理(DSP)协同工作方案,由低频正弦脉冲宽度调制(SPWM)技术控制,以脉冲变压器2ED300C17-S为IGBT保护电路的核心,设计了IGBT故障处理电路、退饱和检测电路与有源钳位电路等多种保护电路。对系统进行理论分析与Matlab/Simulink仿真,搭建了实物测试平台。试验结果表明,当工件加热到900℃时,逆变器输出功率参数与负载端功率参数达到大功率感应加热电源要求,且信号源输出稳定性高、保护电路响应时间快。该设计为相关工业化应用提供技术支持。

双向脉冲液膜法制备微细工具电极

为实现高效制备微细工具电极,提出一种双向脉冲液膜电化学刻蚀技术,相较于单极性脉冲电源可明显提高加工效率,减小球头直径。实验研究了负脉冲电压、正脉冲电压和脉冲周期对氢气泡、电解产物的运动分布规律以及所制备工具电极形貌的影响。研究发现,负脉冲电压可明显消除扩散层的影响,使电流密度分布更加均匀,并且缩短加工时间;在电解液浓度0.5 mol/L、正电压3 V、负电压-2 V、脉冲周期50μs、占空比40%的条件下,可成功制备出直径约580 nm的球头电极。