Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes

Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Alq3 emissive layer greatly and thus reduced the production of unstable cationic Alq3(Alq3^+)species.This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)buffer layer.Furthermore,because of the high thermal and chemical stabilities of these Zn Pcs,a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes.

Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO_3 buffer layer

A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

Growth and Characterization of Doped CeO_2 Buffers on Ni-W Substrates for Coated Conductors Using Metal Organic Deposition Method

CeO2 and Ce0.8M0.2O2-d films （M = Mn, Y, Gd, Sm, Nd and La） with （00l） preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition （MOD） method. The factors influencing the formation of cracks on the surface of these CeO2 and doped CeO2 films on Ni-W substrates were explored by X-ray diffraction （XRD）, scanning electron microscopy （SEM） analysis, atomic force microscopy （AFM） and differential scanning calorimetry （DSC）. The results indicate that many factors, such as the change of the ionic radii of doping cations, the transformation of crystal structure and the formation of oxygen vacancies in lattices at high annealing temperature, may be related to the formation of cracks on the surface of these films. However, the crack formation shows no dependence on the crystal lattice mismatch degree of the films with Ni-W substrates. Moreover, the suppression of surface cracks is related to the change of intrinsic elasticity of CeO2 film with doping of cations with a larger radius. SEM and AFM investigations of Ce0.8M0.2O2-d （M = Y, Gd, Sm, Nd and La） films reveal the dense, smooth and crack-free microstructure, and their lattice parameters match well with that of YBCO, illuminating that they are potentially suitable to be as buffer layer, especially as cap layer in multi-layer architecture of buffer layer for coated conductors.

Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure

A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color stability are related to the location of multiple dopants layer, and the optimized location can compensate for the change of the blue emission intensity under a high voltage and stabilize the spectrum. The electro-optic performances and color stability can be further improved by changing the composition and thickness of the buffer layer between the emitting layer and the electron transport layer.In device B2, the distance from multiple dopant layer to buffer layer is 2 nm and the thickness of buffer layer is 5 nm,the maximum luminance, current density, and power efficiency can reach 9091 cd/m^2, 364.5 mA/cm^2, and 26.74 lm/W,respectively. The variation of international commission on the illumination（CIE） coordinate of device B2 with voltage increasing from 4 V to 7 V is only（0.006, 0.004）.

Photocurrent analysis of organic photovoltaic cells based on CuPc/C_(60) with Alq_3 as a buffer layer

The performance of an organic photovoltaic （OPV） cell based on copper phthatocyanine CuPc/C60 with a tris- （8-hydroxyquinolinato） aluminum （Alq3） buffer layer has been investigated. It was found that the power conversion efficiency of the device was 1.51% under illumination with an intensity of 100 mW/cm^2, which was limited by a squareroot dependence of the photocurrent on voltage. The photocurrent optical power density characteristics showed that the OPV cell had a significant space-charge limited photocurrent with a varied saturation voltage and a three quarters power dependence on optical power density. Also, the absorption spectrum was measured by a spectrophotometer, and the results showed that the additional Alq3 layer has a minor effect on photocurrent generation.

Investigation on Lanthanum Fluoride as a Novel Cathode Buffer Material Layer for the Enhancement of Stability and Performance of Organic Solar Cell

This article presents the investigation on very thin Lanthanum Fluoride (LaF3) layer as a new cathode buffer layer (CBL) for organic solar cell (OSC). OSCs were fabricated with poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) polymer blend at 1:1 ratio. Electron-beam evaporation at room temperature was used to deposit 3 and 5 nm thick LaF3 layer. A very smooth surface of LaF3 with an average roughness of 0.2 nm has been observed by the Atomic Force Microscope (AFM) that is expected to prevent diffusion of cathode metal ion through it and thereby enhance the lifetime and stability of OSC. Huge enhancement of JSC and VOC was also observed for 3 nm-thick LaF3 CBL. Several excellent features of the LaF3 layer such as, transporting electron through tunneling, blocking of holes to the cathode, minimizing recombination, protecting the photoactive polymer from ambient oxygen, and reducing degradation/oxidation of any low work function layer at the cathode interface, might have contributed to the performance enhancement of OSC. The experimental findings indicate the promise of LaF3 to be an excellent CBL material for OSC.

内蒙古平原灌区土壤固碳与养分吸附特征及秸秆还田调控

为内蒙古平原灌区春玉米连续高产稳产过程中秸秆培肥高产田和改良盐碱田提供理论依据。设置了玉米秸秆还田1~4 a(HT1~HT4)定位试验,以秸秆不还田作为对照(CK),测定了春播前和收获期土壤有机碳含量、全氮含量、有效氮含量、有效磷含量、阳离子交换量、pH值和酸碱缓冲曲线。结果表明,HT1~HT4收获期与春播前相比土壤有机碳含量、全氮含量、有效氮含量、有效磷含量、阳离子交换量的相对变化率为1.34%~3.62%,0.20%~1.51%,-0.11%~0.78%,0.89%~6.36%,0.09%~0.41%,CK收获期与春播前相比土壤有机碳含量、全氮含量、有效氮含量、有效磷含量、阳离子交换量的相对变化率为1.57%,-0.02%,-0.45%,-0.15%,-0.05%;HT2、HT3、HT4比CK的土壤pH值显著降低;土壤对碱的缓冲能力依次为HT4>HT3>HT2>HT1>CK。综上所述,随秸秆还田年限的增加,土壤固碳能力、保肥能力和缓冲性能增大,有效抵御因施化肥等因素导致土壤pH值剧烈变化的能力增强,秸秆还田培肥改土措施显著提升了土壤质量。

有机电致发光器件的Buffer Layer及其金属掺杂

描述了电极与有机层之间的薄层（０．１～ｌｎｍ）ＢｕｆｆｅｒＬａｙｅｒ（缓冲层，特别是ＬｉＦ）对ＯＥＬ器件性能，特别是亮度和效率的提高及其增强机制，评述厂复合物电极及金属掺杂有机物层对ＯＥＬ器件亮度和效率的增强现象。

Concentration control of volatile organic compounds by ionic liquid absorption and desorption

Volatile organic compounds(VOCs)are difficult to be eliminated safely and effectively because of their large concentration fluctuations.Thus,maintaining a stable concentration of VOCs is a significant study.In this research,H2O,Tween-80,[Emim]BF4,[Emim]PF6,and[Hnmp]HSO4 were applied to absorb and desorb simulated VOCs.The ionic liquid[Emim]BF4 demonstrated the best performance and was thus selected for further experiments.As the ionic liquid acted as a buffer,the toluene concentration with a fluctuation of 2000–20000 mg·m-3 was stabilized at 6000–12000 mg·m-3.Heating distillation(90°C)was highly efficient to recover[Emim]BF4 from toluene.The regenerated[Emim]BF4 could retain its initial absorption capacity even after multiple cycles.Moreover,[Emim]BF4 had the same buffer function on various aromatic hydrocarbons.

UV-ozone-treated MoO_3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC_(71) BM photovoltaic devices

The enhanced performance of a squaraine compound, with 2,4-bis[4-（N,N-diisobutylamino）-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester （PC71BM） as the acceptor, in solution-processed or- ganic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency （PCE） among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination （100 mW/cm2） is obtained.

不同土壤类型和利用方式下土壤酸缓冲性能分异及其机理探讨——以海南省为例

【目的】通过研究海南省典型土壤酸缓冲性能在不同土壤类型和土地利用方式下的分异及其机理,为海南省酸化土壤的合理利用和管理提供理论依据。【方法】于2019年夏季选取海南省内33处地点,采集各典型植被类型(旱地、水田、林地和园地)下的主要类型土壤(砖红壤、赤红壤、黄壤、燥红土、滨海风沙土、水稻土),对其酸缓冲性能进行研究。【结果】海南省典型土壤酸缓冲容量在3.17~27.70 mmol/kg,平均值为9.01 mmol/kg,供试土壤均对酸敏感。不同土地利用方式下,园地土壤酸缓冲容量(12.14 mmol/kg)显著高于林地、水田和旱地。不同土壤类型下,黄壤酸缓冲容量(17.13 mmol/kg)显著高于砖红壤、赤红壤、燥红土、滨海风沙土和水稻土。海南省典型土壤酸缓冲容量与阳离子交换量、比表面积、黏粒含量和粉粒含量呈极显著正相关(P<0.01),与有机质含量、交换性盐基总量和盐基饱和度呈显著正相关(P<0.05),此外,土壤酸缓冲容量与pH(H2O)和砂粒含量呈极显著负相关(P<0.01),与交换性氢呈显著负相关(P<0.05)。供试土壤中稍易受酸害等级有1个,占3.0%;极易受酸害等级土壤有2个,占6.0%;易受酸害等级土壤有30个,占91.0%。【结论】海南省不同土地利用方式下,园地土壤酸缓冲性能由阳离子交换量决定;旱地和林地土壤酸缓冲性能由比表面积、阳离子交换量和盐基饱和度决定;水田土壤对酸的敏感性由有机质含量决定。不同土壤类型中,黄壤酸缓冲性能受比表面积影响最大;砖红壤和赤红壤酸缓冲性能由比表面积决定;燥红土由阳离子交换量决定;滨海风沙土由pH(H2O)决定;水稻土由有机质含量决定。在日后的农业生产中,合理施用化肥、增施有机肥或采用土壤酸性调节剂等有利于提高土壤酸缓冲容量,为农业生产提供良好的环境。

基于响应面法优化的异相芬顿处理电镀废水有机络合物

为提高异相芬顿处理电镀废水的催化效率,优化工艺条件,采用邻苯二甲酸和盐酸缓冲溶液制备粉煤灰负载型异相芬顿催化剂,并分别研究催化剂投加量、初始pH值及H_(2)O_(2)投加量等单因素对电镀废水有机络合物的催化效率的影响及作用机制。在单因素实验的基础上,运用Box-Be-hnken Design响应面法优化实验设计,通过模型构建和方差分析,获得优化条件及多因素之间的交互作用,并验证模型的精准度。结果表明,各因素对电镀废水中CODCr去除率的影响作用排序为:初始pH值>催化剂投加量>H_(2)O_(2)浓度,初始pH值与H_(2)O_(2)浓度之间的交互作用较为显著;最优反应条件为:催化剂投加量16.86 g·L^(-1)、初始pH值3.49、H_(2)O_(2)浓度50.6 mmol·L^(-1),CODCr去除率实际值的平均值为94.2%,与预测值的相对误差仅为0.95%,说明采用该模型优化异相芬顿降解电镀废水中有机络合物是切实可行的。

连续施用不同比例鸡粪氮对水稻土有机质积累及土壤酸化的影响

【目的】土壤酸化是自然过程。随着农业集约化发展,土壤酸化在部分农田呈加速趋势,而施肥是目前农田土壤酸化加速的重要诱因,研究有机肥和化肥对土壤酸化的作用差异及机理,对合理指导施肥及耕地保育有重要的意义。【方法】通过测定不同施肥处理的不同组分有机质含量及酸碱缓冲容量,探明不同施肥处理的酸化影响,从土壤有机质和盐基累积角度对有机-无机肥料不同比例配施条件下土壤酸化特征进行了研究。【结果】1连续5年在等氮量(N270 kg/hm2)且有机-无机肥料不同配施比例的处理中,水稻产量以有机肥比例为25%~50%的处理最高,其平均产量比单施化肥处理提高了5.1%,比对照提高44.9%。但处理间无显著性差异;2土壤各活性有机质及总有机质等指标中仅总有机质含量随鸡粪施用比例的增加而持续增加,不同比例有机无机肥配合施用后,土壤的高活性有机质及低活性有机质均高于CK和纯化肥氮处理,但随着有机肥投入比例的升高,除中活性有机质和水稻产量之间呈显著的正相关外(P=0.0067**),高活性有机质、活性有机质及总有机质含量与水稻产量之间的相关性不显著(对应的概率值分别为P=0.192,P=0.208,P=0.160);3施肥提高了土壤的碳库管理指数(CPMI),且其随有机肥施用比例的上升呈增加趋势。增施鸡粪提高土壤的交换性盐基离子(Ca2+、Mg2+、K+、Na+)含量,导致阳离子代换量(CEC)和pH随鸡粪施用比例的提高而升高。供试土壤酸碱缓冲容量为2.07~2.36cmol/kg,随鸡粪施用比例的上升而增加,其与土壤阳离子代换量及有机质含量呈显著正相关。表明增施鸡粪可使土壤pH及酸碱缓冲容量上升,与鸡粪使土壤盐基累积量及有机质含量的提高有关。【结论】连续有机-无机肥施用下,土壤pH上升和酸碱缓冲容量的提高可能与该试验点下盐基离子和有机质含量随鸡粪施用比例上升有关,但其最终上升幅度及平衡点尚需进一步研究。鸡粪氮替代化肥氮比例为25~50%时,土壤性质最优,水稻产量最高。

K_3解磷菌的解磷机理及其对缓冲容量的响应

以对磷酸三钙具有高效溶解作用且对玉米苗生长有促生效果的假单胞菌K3为模式菌株,采用NBRIP液体培养基研究了解磷菌K3的解磷机制及缓冲容量对其解磷量的影响。结果表明,解磷菌K3液体摇瓶培养7 d后,培养液中水溶性磷从6.54μg/mL增加至655.23μg/mL,pH从7.00降至3.99。高效液相色谱测定发现,K3菌液中的主要代谢产物为苹果酸、乳酸和草酸,浓度分别为47.39 mmol/L、25.67 mmol/L和1.89 mmol/L。人工模拟K3菌株产生的有机酸及调节培养基不同pH值对磷酸三钙溶解度影响的试验表明,有机酸的螯合作用是解磷细菌K3菌株解磷的主要机理,而调节培养基pH对解磷的作用有限。液体摇瓶和土培试验结果显示,土壤缓冲容量对K3解磷菌的解磷效应有显著的抑制作用。

用C_(60)为空穴缓冲层的高效率有机电致发光器件

以富勒烯C60 作为空穴注入缓冲层 ,在结构为ITO/C60 /TPD/Alq3 /LiF/Al的器件中 ,改善了器件的发光效率。研究了C60 厚度对器件发光特性的影响。当C60 厚度为 1 6nm时 ,器件发光效率最高。在电流密度为 10 0mA/cm2 时 。

潮土和石灰性褐土缓冲性能研究

对豫北地区的 2个土类 3种不同土壤的缓冲性能进行分析研究 ,结果表明 :供试土壤对酸、碱的缓冲性强弱依次为高肥潮土 >褐土 >潮土。且对酸的缓冲能力强于对碱的缓冲能力。此外 ,土壤有机质含量的高低与其对酸碱的缓冲能力成相关。

东风港滨岸缓冲带对水生生物群落结构的影响

选择苏州河的支流东风港为研究对象,选取其中一段人工建造滨岸缓冲带作为研究区,调查其水生生物群落并与对照区相比较,以具体说明滨岸缓冲带对水生生物群落结构的影响。通过对研究区与对照区内的浮游植物、浮游动物、底栖动物和大型水生植物的调查研究,结果显示,研究区浮游植物的种类数多于对照区,且以清水种占优势;浮游动物群落结构研究区明显比对照区复杂;底栖动物的种类数、密度和生物量研究区都多于对照区;另外研究区还有较为多样化的大型水生植物群落。这些都表明研究区的水生生物群落结构较对照区更为完善。说明滨岸缓冲带对提高水体生物多样性,完善水生生物群落结构具有较为明显的作用。

Bphen缓冲层对有机光伏电池性能的影响

采用Bphen作为缓冲层，研究Bphen处在电子受体材料C60和阴极Ag之间对有机薄膜光伏电池（OPV）性能的影响．通过引入2.5nm厚的Bphen，在100 mW/cm^2光照下，CuPc/C60结构的器件效率从0.87%提高到2.25%． 对光生电流-电压的分析表明，Bphen缓冲层可以有效的提高电子从C60层向Ag阴极的传输能力和平衡器件中载流子的传输能力．系统研究了Bphen厚度对OPV器件性能的影响，发现随着Bphen厚度的增加，电导率的降低是限制器件性能的主要原因．此外，采用紫外-可见光分光光度计测试了器件的吸收光谱，发现Bphen缓冲层可以增强CuPc/C60的光吸收能力．