Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells

The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at the defects and form precipitates heterogeneously in the high density defect region. In the case of heavy contamination, the Cu precipitate can significantly reduce the carrier lifetime of multicrystalline silicon due to their Schottkydiode behavior in the silicon substrate. A 900 °C rap thermal process （RTP） phosphorus gettering anneal cannot be sufficiently effective to remove the Cu precipitates in these two regions.

Electromagnetic characteristics of square cold crucible designed for silicon preparation

In the present work, the strength and distribution of electromagnetic field in the square cold crucible that designed for casting multicrystalline silicon were measured and analyzed by using a small coil method. The results show that in the perpendicular direction the maximum of magnetic flux density （B） appears at the position slightly above the middle of the coil, and then B attenuates toward both sides, and decreases more to the bottom of the crucible. In the horizontal direction, from the edge （comer） to the center, B firstly decreases gradually, and then slightly increases in the center. While along the inner sides of the crucible, the distribution is relatively uniform, especially in the effective acting range. B increases with the increasing of the input power. Moving the coil to the top of the crucible, B increases and the effective acting range of the electromagnetic field becomes bigger. For the coils with different turns, the five turns coil can induce the highest magnetic flux density.

Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efflciency and Low-Cost Solar Cells

To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.

Investigation on Open-Circuit Voltage of an Efficiency-Boosting Solar Cell Technique Featuring V-Configuration

The V-Shaped Module (VSM) solar cell technology, which breaks the traditional concept of solar cell system, has been proven to enhance power conversion efficiency of some solar cells and has offered opportunities to increase generation power densities in area-limited applications. Compared to a planar cell system, the VSM has an additional opportunity to absorb photons and taps the potential of solar cells. In this study, the VSM, the proposed common technique enhancing efficiencies of various solar cells, was investigated by using commercially available multi-crystalline silicon solar cells. The VSM technique enables the efficiencies of the multi-crystalline silicon cells to increase from 13.4% to 20.2%, giving an efficiency boost of 51%. Though the efficiency of the cells increases, the open-circuit voltage of the cells decreases owing to the VSM technique. Furthermore, the obvious reduction in open-circuit voltage in the VSM was found and the phenomenon is explained for the first time.