Silicon carbide （SiC） is a IV-IV compound semiconductor material with a wide band gap.Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature,high-power,and high-radi...Silicon carbide （SiC） is a IV-IV compound semiconductor material with a wide band gap.Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature,high-power,and high-radiation conditions,in which conventional semiconductors cannot be adequately performed.In this paper,SiH4 and C2H2 were used to synthesize SiC nano-whiskers.Metal Ni was the catalyst.SiC nanowhiskers were grown by vapor-liquid-solid mechanism.The effects of the H2 flow rate,growth temperature,catalyst thickness and growth pressure to grow SiC nano-whiskers were studied.3C-SiC thin film and nano-tips can be synthesized by controlling the growth conditions.展开更多
文摘Silicon carbide （SiC） is a IV-IV compound semiconductor material with a wide band gap.Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature,high-power,and high-radiation conditions,in which conventional semiconductors cannot be adequately performed.In this paper,SiH4 and C2H2 were used to synthesize SiC nano-whiskers.Metal Ni was the catalyst.SiC nanowhiskers were grown by vapor-liquid-solid mechanism.The effects of the H2 flow rate,growth temperature,catalyst thickness and growth pressure to grow SiC nano-whiskers were studied.3C-SiC thin film and nano-tips can be synthesized by controlling the growth conditions.
