The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction （DCXRD） pattern. It is found that the width of the 0^th peak is ...The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction （DCXRD） pattern. It is found that the width of the 0^th peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge （GeSi actually） layer, which make the width of the 0^th peak narrow after annealing.展开更多
The sensitization of TiO2 nanotubes with CdHgTe quantum dots (QDs) was applied by using the direct dispersion technique. The CdHgTe-QDs were fabricated with different Hg% ratio in organic medium for controlling their ...The sensitization of TiO2 nanotubes with CdHgTe quantum dots (QDs) was applied by using the direct dispersion technique. The CdHgTe-QDs were fabricated with different Hg% ratio in organic medium for controlling their particle size. While TiO2 nanotubes (NTs) were fabricated by anodization technique. The QDs and NTs were characterized using SEM, TEM and UV-VIS spectrophotometer. In this work, the photovoltaic parameters of the quantum dots sensitized solar cell (QDSSC) depend mainly on the Hg% ratio in the QDs. The most efficient QDSSC was obtained at 25% of Hg ratio with Jsc of 4 mA/cm2, Voc of 0.63 V, FF of 0.32 and efficiency of 0.81%.展开更多
This perspective paper introduces the concept that nanocarbons and related materials such as carbon dots are an interesting intrinsic photocatalytic semiconducting material, and not only a modifier of the existing (se...This perspective paper introduces the concept that nanocarbons and related materials such as carbon dots are an interesting intrinsic photocatalytic semiconducting material, and not only a modifier of the existing (semiconducting) materials to prepare hybrid materials. The semiconducting properties of the nanocarbons, and the possibility to have the band gap within the visible-light region through defect band engineering, introduction of light heteroatoms and control/manipulation of the curvature or surface functionalization are discussed. These materials are conceptually different from the 'classical' semiconducting photocatalysts, because semiconductor domains with tuneable characteristics are embedded in a conductive carbon matrix, with the presence of various functional groups (as C=0 groups) enhancing charge separation by trapping electrons. These nanocarbons open a range of new possibilities for photocatalysis both for energetic and environmental applications. The use of nanocarbons as quantum dots and photo luminescent materials was also analysed. (C) 2017 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights reserved.展开更多
A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the populatio...A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states produced from the surface bonds. The nano-laser belongs to the emission of type Ⅱ. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of nano-clusters (d<3 nm) can make the localized states into band gap below the conduction band opened and the states of conduction band become the pumping level of nano-laser. The emission energy of nano-laser will be limited in the range of 1.7～2.3 eV generally due to the position of the localized states in gap, which is good in agreement between the experiments and the theory.展开更多
Nowadays Quantum Cellular Automata (QCA) as the leading technology in design of microelectronic systems has been raised. With respect to high velocity and density in low power and also simple concepts, this technology...Nowadays Quantum Cellular Automata (QCA) as the leading technology in design of microelectronic systems has been raised. With respect to high velocity and density in low power and also simple concepts, this technology is a viable alternative to CMOS technology. In collector design, the primary component of each processor is very important. Due to the small elements in this technology, failure rate in manufacturing process technology is very high. In the other hand, the simulation shows that the intersection point of two wires is one of the critical points in QCA circuits. This means that defects in the manufacturing process around these points can cause malfunction in the circuit performance. In this paper, a collector in cross sections of wire in his new method used higher reliability against defects during manufacturing has been developed. QCA Designer software is used to simulate the case study system.展开更多
基金＂863＂ Research Plan Grant No. 2006AA032415 the National Natural Science Foundation of China under Grant Nos. 60336010, 90104003, 90401001,60676005the National High Technology Research and Development Program of China No. 2002AA312010.
文摘The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction （DCXRD） pattern. It is found that the width of the 0^th peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge （GeSi actually） layer, which make the width of the 0^th peak narrow after annealing.
文摘The sensitization of TiO2 nanotubes with CdHgTe quantum dots (QDs) was applied by using the direct dispersion technique. The CdHgTe-QDs were fabricated with different Hg% ratio in organic medium for controlling their particle size. While TiO2 nanotubes (NTs) were fabricated by anodization technique. The QDs and NTs were characterized using SEM, TEM and UV-VIS spectrophotometer. In this work, the photovoltaic parameters of the quantum dots sensitized solar cell (QDSSC) depend mainly on the Hg% ratio in the QDs. The most efficient QDSSC was obtained at 25% of Hg ratio with Jsc of 4 mA/cm2, Voc of 0.63 V, FF of 0.32 and efficiency of 0.81%.
基金Financial support from the Italian MIUR gh the PRIN Project 2015K7FZLH SMARTNESS "Solar driven chemistry:new materials for photo- and electro-catalysis"SINCHEM,a Joint Doctorate programme selected under the Erasmus Mundus Action 1 Programme (FPA 2013-0037)
文摘This perspective paper introduces the concept that nanocarbons and related materials such as carbon dots are an interesting intrinsic photocatalytic semiconducting material, and not only a modifier of the existing (semiconducting) materials to prepare hybrid materials. The semiconducting properties of the nanocarbons, and the possibility to have the band gap within the visible-light region through defect band engineering, introduction of light heteroatoms and control/manipulation of the curvature or surface functionalization are discussed. These materials are conceptually different from the 'classical' semiconducting photocatalysts, because semiconductor domains with tuneable characteristics are embedded in a conductive carbon matrix, with the presence of various functional groups (as C=0 groups) enhancing charge separation by trapping electrons. These nanocarbons open a range of new possibilities for photocatalysis both for energetic and environmental applications. The use of nanocarbons as quantum dots and photo luminescent materials was also analysed. (C) 2017 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights reserved.
基金Support from the National Natural Science Foundation of China ( Grant No.10764002,60966002,11264007)the National Key Laboratory of Surface Physics in Fudan University
文摘A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states produced from the surface bonds. The nano-laser belongs to the emission of type Ⅱ. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of nano-clusters (d<3 nm) can make the localized states into band gap below the conduction band opened and the states of conduction band become the pumping level of nano-laser. The emission energy of nano-laser will be limited in the range of 1.7～2.3 eV generally due to the position of the localized states in gap, which is good in agreement between the experiments and the theory.
文摘Nowadays Quantum Cellular Automata (QCA) as the leading technology in design of microelectronic systems has been raised. With respect to high velocity and density in low power and also simple concepts, this technology is a viable alternative to CMOS technology. In collector design, the primary component of each processor is very important. Due to the small elements in this technology, failure rate in manufacturing process technology is very high. In the other hand, the simulation shows that the intersection point of two wires is one of the critical points in QCA circuits. This means that defects in the manufacturing process around these points can cause malfunction in the circuit performance. In this paper, a collector in cross sections of wire in his new method used higher reliability against defects during manufacturing has been developed. QCA Designer software is used to simulate the case study system.
