Optical and Magnetic Properties of Fe_2O_3/SiO_2 Nano-composite Films

Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.

Enhanced nonlinear optical absorption of Au/SiO_2 nano-composite thin films

Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications. Au/SiO2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering. Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO2 matrix. Optical absorption peaks due to the surface plasmon resonance of Au particles are observed. The absorption property is enhanced with the increase of Au content, showing a maximum value in the films with 37 vol% Au. The absorption curves of the Au/SiO2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory. Increasing Au content over 37 vol% results in the partial connection of Au particles, whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk. The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases.

Optical Absorption of Nano-Composite Thin Films of Au in Teflon

Nano-composite films of Au particles in Teflon were obtained by thermal vacuum deposition. The obtained films were characterized by the different shapes and dimensions of the inclusion particles. Absorption spectra of the films were measured in-situ. A model for the calculation of the optical properties of the nano-composite thin films with an inho-mogeneous distribution of the inclusions along the thickness of the film is proposed. Absorption properties of inclusions were analyzed by considering the local field interaction. The calculated absorption profiles are compared with the experimentally obtained absorption profiles. This comparison gives a possibility to draw conclusions about the concentration, shapes and shape distributions of the inclusion particles. For example, the films obtained by duration deposition are characterized by inclusions having the shape of prolate ellipsoids oriented normally to surface of the film.

Reactive DC Magnetron Sputter Deposited Titanium-Copper-Nitrogen Nano-Composite Thin Films with an Argon/Nitrogen Gas Mixture

A sintered Ti13Cus7 target was sputtered by reactive direct current （DC） magnetron sputtering with a gas mixture of argon/nitrogen for different sputtering powers. Titanium-coppernitrogen thin films were deposited on Si （111）, glass slide and potassium bromide （KBr） substrates. Phase analysis and structural properties of titanium-copper-nitrogen thin films were studied by X-ray diffraction （XRD）. The chemical bonding was characterized by Fourier transform infrared （FTIR） spectroscopy. The results from XRD show that the observed phases are nano-crystallite cubic anti rhenium oxide （anti ReO3） structures of titanium doped Cu3N （Ti：Cu3N） and nanocrystallite face centered cubic （fcc） structures of copper. Scanning electron microscopy and energy dispersive X-ray spectroscopy （SEM/EDX） were used to determine the film morphology and atomic titanium/copper ratio, respectively. The films possess continuous and agglomerated structure with an atomic titanium/copper ratio （-0.07） below that of the original target （- 0.15）. The transmittance spectra of the composite films were measured in the range of 360 nm to 1100 nm. Film thickness, refractive index and extinction coefficient were extracted from the measured transmittance using a reverse engineering method. In the visible range, the higher absorption coefficient of the films prepared at lower sputtering power indicates more nitrification in comparison to those prepared at higher sputtering power. This is consistent with the formation of larger Ti：Cu3N crystallites at lower sputtering power. The deposition rate vs. sputtering power shows an abrupt transition from metallic mode to poisoned mode. A complicated behavior of the films＇ resistivity upon sputtering power is shown.

Nitrification of Reactively Magnetron Sputter Deposited Ti-Cu Nano-Composite Thin Films

A metalloid Ti13Cu87 target was sputtered by reactive DC magnetron sputtering at various substrate temperatures in an Ar-N2 mixture ambient. The sputtered species were condensed on Si (111), glass slide and Potsssium bromide (KBr) substrates. The as-deposited films were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), optical spectrophotometry and four point probe technique. The as-deposited films present composite structure of nano-crystallite cubic anti-ReO3 structure of Ti inserted Cu3N (Ti:Cu3N) and nano-crystallite face centre cubic (fcc) structure of Cu. The titanium atoms and sequential nitrogen excess form a solid solution within the Cu3N crystal structure and accommodate in crystal lattice and vacant interstitial site, respectively. Depending on substrate temperature, unreacted N atoms interdiffuse between crystallites and their (and grain) boundaries. The films have agglomerated structure with atomic Ti:Cu ratio less than that of the original targets. A theoretical model has been developed, based on sputtering yield, to predict the atomic Ti:Cu ratio for the as-deposited films. Film thickness, refractive index and extinction coefficient are extracted from the measured transmittance spectra. The films’ resistivity is strongly depending on its microstructural features and substrate temperature.

Significantly Improved High-Temperature Energy Storage Performance of BOPP Films by Coating Nanoscale Inorganic Layer

Biaxially oriented polypropylene(BOPP)is one of the most commonly used commercial capacitor films,but its upper operating temperature is below 105℃due to the sharply increased electrical conduction loss at high temperature.In this study,growing an inorganic nanoscale coating layer onto the BOPP film's surface is proposed to suppress electrical conduction loss at high temperature,as well as increase its upper operating temperature.Four kinds of inorganic coating layers that have different energy band structure and dielectric property are grown onto the both surface of BOPP films,respectively.The effect of inorganic coating layer on the high-temperature energy storage performance has been systematically investigated.The favorable coating layer materials and appropriate thickness enable the BOPP films to have a significant improvement in high-temperature energy storage performance.Specifically,when the aluminum nitride(AIN)acts as a coating layer,the AIN-BOPP-AIN sandwich-structured films possess a discharged energy density of 1.5 J cm^(-3)with an efficiency of 90%at 125℃,accompanying an outstandingly cyclic property.Both the discharged energy density and operation temperature are significantly enhanced,indicating that this efficient and facile method provides an important reference to improve the high-temperature energy storage performance of polymer-based dielectric films.

Flexible, Transparent and Conductive Metal Mesh Films with Ultra‑High FoM for Stretchable Heating and Electromagnetic Interference Shielding

Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittance remains a significant challenge.Herein,a flexible,transparent,and conductive copper(Cu)metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique.The Cu mesh film shows an ultra-low sheet resistance(0.18Ω□^(-1)),high transmittance(85.8%@550 nm),and ultra-high figure of merit(>13,000).It also has satisfactory stretchability and mechanical stability,with a resistance increases of only 1.3%after 1,000 bending cycles.As a stretchable heater(ε>30%),the saturation temperature of the film can reach over 110°C within 60 s at 1.00 V applied voltage.Moreover,the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5μm.As a demonstration,it is used as a transparent window for shielding the wireless communication electromagnetic waves.Therefore,the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications.

Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10nm Epitaxial Hf_(0.5)Zr_(0.5)O_(2)Thin Films

Doped HfO_(2)-based ferroelectric(FE)films are emerging as leading contenders for next-generation FE nonvolatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and robust ferroelectricity at nanoscale dimensions.Despite the considerable attention paid to the FE properties of HfO_(2)-based films in recent years,enhancing their polarization switching speed remains a critical research challenge.We demonstrate the strong ferroelectricity of sub-10nm Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films and show that the polarization switching speed of these thin films can be significantly affected by HZO thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)-buffered layer.Our observations indicate that the HZO thin film thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)layer influence the nucleation of reverse domains by altering the phase composition of the HZO thin film,thereby reducing the polarization switching time.Although the increase in HZO thickness and anisotropic compressive strain hinder the formation of the FE phase,they can enable faster switching.Our findings suggest that FE HZO ultrathin films with polar orthorhombic structures have broad application prospects in microelectronic devices.These insights into novel methods for increasing polarization switching speed are poised to advance the development of high-performance FE devices.

Centimeter-Scale Above-Room-Temperature Ferromagnetic Fe_(3)GaTe_(2)Thin Films by Molecular Beam Epitaxy

Fe_(3)GaTe_(2),as a layered ferromagnetic material,has a Curie temperature(T_(c))higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-sized high-quality Fe_(3)GaTe_(2)thin films need to be prepared.Here,the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology.Furthermore,the Tc of the samples raises as the film thickness increases,and reaches 367K when the film thickness is 60 nm.This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe_(3)GaTe_(2).

Ultrathin Limit on the Anisotropic Superconductivity of Single-Layered Cuprate Films

Exploring dimensionality effects on cuprates is important for understanding the nature of high-temperature superconductivity.By atomically layer-by-layer growth with oxide molecular beam epitaxy,we demonstrate that La_(2−x)Sr_(x)CuO_(4)(x=0.15)thin films remain superconducting down to 2 unit cells of thickness but quickly reach the maximum superconducting transition temperature at and above 4 unit cells.By fitting the critical magnetic field(μ0H_(c2)),we show that the anisotropy of the film’s superconductivity increases with decreasing film thickness,indicating that the superconductivity of the film gradually evolves from weak three-to two-dimensional character.These results are helpful to gain more insight into the nature of high-temperature superconductivity with dimensionality.

Effect of drying methods on perovskite films and solar cells

The high efficiency,solution processibility,and flexibility of perovskite solar cells make them promising candidates for the photovoltaic industry[1−8].The deposition method is one of the most critical factors that affect the performance of perovskite films.Various deposition methods have been developed to make perovskite films,including spin-coating,slotdie coating.

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy

BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric properties.Herein,the sol-gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates,and the effects of the substitution of the elements Co,Cu,Mn(B-site)and Sm,Eu,La(A-site)on the crystal structure,ferroelectricity,and leakage current of the BFO-based thin films were invest-igated.Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films.Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure,while La is biased toward pseudo-tet-ragonal.Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180°can be realized through the prepared films.The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows:Cu>Co>Mn(B-site),Sm>La>Eu(A-site).The current density voltage curves indicated that the order for leakage contribution is as follows:Mn<Cu<Co(B-site),La<Eu<Sm(A-site).Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains,and the grain size distribution statistics proved that La element promotes the reduction of grain size,leading to the increase of grain boundaries and the reduction of leakage.Finally,a Bi_(0.985)Sm_(0.045)La_(0.03)Fe_(0.96)Co_(0.02)Cu_(0.02)O_(3)(SmLa-CoCu)thin film with a qualitative leap in the remnant polarization from 25.5(Bi_(0.985)Sm_(0.075)FeO_(3))to 98.8µC/cm^(2)(SmLa-CoCu)was prepared through the syner-gistic action of Sm,La,Co,and Cu elements.The leakage current is also drastically reduced from 160 to 8.4 mA/cm^(2)at a field strength of 150 kV/cm.Thus,based on the increasing entropy strategy of chemical engineering,this study focuses on enhancing ferroelectricity and decreasing leakage current,providing a promising path for the advancement of ferroelectric devices.

Local thermal conductivity of inhomogeneous nano-fluidic films:A density functional theory perspective

Combining the mean field Pozhar-Gubbins(PG)theory and the weighted density approximation,a novel method for local thermal conductivity of inhomogeneous fluids is proposed.The correlation effect that is beyond the mean field treatment is taken into account by the simulation-based empirical correlations.The application of this method to confined argon in slit pore shows that its prediction agrees well with the simulation results,and that it performs better than the original PG theory as well as the local averaged density model(LADM).In its further application to the nano-fluidic films,the influences of fluid parameters and pore parameters on the thermal conductivity are calculated and investigated.It is found that both the local thermal conductivity and the overall thermal conductivity can be significantly modulated by these parameters.Specifically,in the supercritical states,the thermal conductivity of the confined fluid shows positive correlation to the bulk density as well as the temperature.However,when the bulk density is small,the thermal conductivity exhibits a decrease-increase transition as the temperature is increased.This is also the case in which the temperature is low.In fact,the decrease-increase transition in both the small-bulk-density and low-temperature cases arises from the capillary condensation in the pore.Furthermore,smaller pore width and/or stronger adsorption potential can raise the critical temperature for condensation,and then are beneficial to the enhancement of the thermal conductivity.These modulation behaviors of the local thermal conductivity lead immediately to the significant difference of the overall thermal conductivity in different phase regions.

Chitosan/Sodium Alginate Multilayer pH-Sensitive Films Based on Layer-by-Layer Self-Assembly for Intelligent Packaging

The abuse of plastic food packaging has brought about severe white pollution issues around the world.Developing green and sustainable biomass packaging is an effective way to solve this problem.Hence,a chitosan/sodium alginate-based multilayer film is fabricated via a layer-by-layer(LBL)self-assembly method.With the help of superior interaction between the layers,the multilayer film possesses excellent mechanical properties(with a tensile strength of 50 MPa).Besides,the film displays outstanding water retention property(blocking moisture of 97.56%)and ultraviolet blocking property.Anthocyanin is introduced into the film to detect the food quality since it is one natural plant polyphenol that is sensitive to the pH changes ranging from 1 to 13 in food when spoilage occurs.It is noted that the film is also bacteriostatic which is desired for food packaging.This study describes a simple technique for the development of advanced multifunctional and fully biodegradable food packaging film and it is a sustainable alternative to plastic packaging.

Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.

Surface Deposition of Ni(OH)_(2) and Lattice Distortion Induce the Electrochromic Performance Decay of NiO Films in Alkaline Electrolyte

NiO,an anodic electrochromic material,has applications in energy-saving windows,intelligent displays,and military camouflage.However,its electrochromic mechanism and reasons for its performance degradation in alkaline aqueous electrolytes are complex and poorly understood,making it challenging to improve NiO thin films.We studied the phases and electrochemical characteristics of NiO films in different states(initial,colored,bleached and after 8000 cycles)and identified three main reasons for performance degradation.First,Ni(OH)_(2)is generated during electrochromic cycling and deposited on the NiO film surface,gradually yielding a NiO@Ni(OH)_(2)core-shell structure,isolating the internal NiO film from the electrolyte,and preventing ion transfer.Second,the core-shell structure causes the mode of electrical conduction to change from first-to second-order conduction,reducing the efficiency of ion transfer to the surface Ni(OH)_(2)layer.Third,Ni(OH)_(2)and NiOOH,which have similar crystal structures but different b-axis lattice parameters,are formed during electrochromic cycling,and large volume changes in the unit cell reduce the structural stability of the thin film.Finally,we clarified the mechanism of electrochromic performance degradation of NiO films in alkaline aqueous electrolytes and provide a route to activation of NiO films,which will promote the development of electrochromic technology.

Versatile techniques based on the Thermionic Vacuum Arc(TVA)and laser-induced TVA methods for Mg/Mg:X thin films deposition-A review

Magnesium and magnesium thin alloy films were deposited using a thermionic vacuum arc(TVA),which has multiple applications in the field of metallic electrodes for diodes and batteries or active corrosion protection.An improved laser-induced TVA(LTVA)method favors the crystallization processes of the deposited magnesium-based films because the interaction between laser and plasma discharge changes the thermal energy during photonic processes due to the local temperature variation.Plasma diagnosis based on current discharge measurements suggests an inelastic collision between the laser beam and the atoms from the plasma discharge.The morphology and surface properties of the obtained thin films differ between these two methods.While the amorphous character is dominant for TVA thin films,enabling a smooth surface,the LTVA method produces rough surfaces with prominent crystallinity,less hydrophobic character and lower surface energy.The smooth surfaces obtained by the TVA methods produce metallic electrodes with good electrical contact,ensuring better diodes and battery charge transport.Both methods allow uniform magnesium alloys to be obtained,but the laser used in the LTVA on the discharge plasma controls the added metal or element ratio.

Generation of lossy mode resonances(LMR)using perovskite nanofilms

The results presented here show for the first time the experimental demonstration of the fabrication of lossy mode resonance(LMR) devices based on perovskite coatings deposited on planar waveguides. Perovskite thin films have been obtained by means of the spin coating technique and their presence was confirmed by ellipsometry, scanning electron microscopy, and X-ray diffraction testing. The LMRs can be generated in a wide wavelength range and the experimental results agree with the theoretical simulations. Overall, this study highlights the potential of perovskite thin films for the development of novel LMR-based devices that can be used for environmental monitoring, industrial sensing, and gas detection, among other applications.