Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepa...Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano- imprint technology. In this process, a combination of hot embossing nano-imprint lithography （HE-NIL） and ultraviolet nano-imprint lithography （UV-NIL） is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature （Tc） of the superconducting NbN meander nanowires is about 5 K and the critical current （lc） is about 3.5 μA at 2.5 K.展开更多
基金supported by the National Basic Research Program of China(Grant Nos.2011CBA00106 and 2009CB929102)the National Natural Science Foundation of China(Grant Nos.11104333 and 10974243)
文摘Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano- imprint technology. In this process, a combination of hot embossing nano-imprint lithography （HE-NIL） and ultraviolet nano-imprint lithography （UV-NIL） is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature （Tc） of the superconducting NbN meander nanowires is about 5 K and the critical current （lc） is about 3.5 μA at 2.5 K.
