Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted m...Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p- and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed.展开更多
Starting from Kane's model and taking into account the surface electron spin-orbit interaction, we have derived the dispersion relation and Landau levels of inversion layer subband on narrow-gap semiconductors. Th...Starting from Kane's model and taking into account the surface electron spin-orbit interaction, we have derived the dispersion relation and Landau levels of inversion layer subband on narrow-gap semiconductors. The capacitance-voltage spectroscopy, magnetoconductivity oscillations and cyclotron resonance spectroscopy for the p-Hg_(1-x)Cd_x Te MIS structure sample at temperature 4.2 K have been measured. From the experimental data, the subband parameters and spin-orbit coupling intensity, which are involved in the expressions of subband dispersion relation and Landau levels, have been determined. As a result, the inversion layer electron subband dispersion relation and Landau level fan chart for HgCdTe as well as the zero field spin splitting effect, the shifting and the crossing effect of Landau levels have been described quantitatively.展开更多
基金supported by NSFC (Grant No. Y81Z01A1A9)CAS (Grant No. Y929013EA2)+3 种基金UCAS (Grant No.110200M208)the Strategic Priority Research Program of CAS (Grant No. XDB28000000)the National Key R&D Program of China (Grant No.11834014)Beijing Municipal Science & Technology Commission (Grant No. Z181100004218001)
文摘Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p- and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed.
基金Project partly supported by the National Natural Science Foundation of China and partly by the A. V. Humboldt Foundation in F. R. Germany.
文摘Starting from Kane's model and taking into account the surface electron spin-orbit interaction, we have derived the dispersion relation and Landau levels of inversion layer subband on narrow-gap semiconductors. The capacitance-voltage spectroscopy, magnetoconductivity oscillations and cyclotron resonance spectroscopy for the p-Hg_(1-x)Cd_x Te MIS structure sample at temperature 4.2 K have been measured. From the experimental data, the subband parameters and spin-orbit coupling intensity, which are involved in the expressions of subband dispersion relation and Landau levels, have been determined. As a result, the inversion layer electron subband dispersion relation and Landau level fan chart for HgCdTe as well as the zero field spin splitting effect, the shifting and the crossing effect of Landau levels have been described quantitatively.
