B4C/NRL flexible films for thermal neutron shielding

Boron carbide/natural rubber latex(B_4 C/NRL)flexible films were prepared via dip-molding with B_4 C content in the range of 5–55 wt% for thermal neutron(0.0253 e V) shielding. B_4 C was well dispersed in NRL according to microscopic observation. Both the inside and outside surfaces of the film were smooth. For B_4 C/NRL flexible films, the minimum elongation at break was greater than 600%, the minimum tensile strength was greater than 12 MPa, and the hardness was in the range of 35–55 HA,which were suitable for preparing flexible wearable products. The attenuation efficiencies of the B_4 C/NRL flexible films for thermal neutrons were also calculated. The B_4 C/NRL flexible films exhibit good attenuation effect for thermal neutrons.

MICROWAVE PERMEABILITY SPECTRA OF SPUTTERED Fe-Co-B SOFT MAGNETIC THIN FILMS

Permeability characteristics of sputtered soft magnetic Fe40Co40B20 thin films are investigated in the range of O. 5 to 5 GHz by a shortened microstrip transmission line perturbation method. Excellent microwave permeability is achieved at 0.4 Pa argon pressure： fr is 3.32 GHz, the real and imaginary part of permeability at 0.5 GHz are 104 and 61, respectively. In addition, the thickness effect on permeability is also studied. The minimum damping can be achieved at the thinnest film. Different sources contributed to in-plane anisotropy are discussed briefly. The deviation between the peak frequency of the imaginary part and the zero-crossing frequency of the real part of permeability is also presented.

Interlayer Energy Transfer from Naphthalene to Anthracene Chromophores Organized in Langmuir-Blodgett Films

Interlayer energy transfer between 2, 3-naphtho-10-hexadecylaza-15-crown-5 (NC16) and N-[1-(9-methoxyanthryl)]decylaza-15-crown-5 (A10C) within multilayer Langmuir-Blodgett films has been studied by steady-state fluorescence spectra. The donor and acceptor could be separated precisely by inserting stearic acid (SA) spacers. The efficiency of the energy transfer increases with the decrease in the donor-acceptor distance by a quadratic manner, suggesting the donor excitations are delocalized in the layer.

Preparation and characterization of thick cubic boron nitride films

Cubic boron nitride （c-BN） films are prepared by the radio frequency magnetron sputtering technique. The stresses and crystallinities of the films are estimated by the Fourier transform infrared spectroscopy of c-BN samples, including the peak shifts and varieties of full widths at half maximum. The effects of the B-C-N interlayer and the two-stage deposition method on the c-BN films are investigated. Then the thick and stable c-BN films are prepared by a combination of the two methods. The properties of the interlayer and film are also characterized.

Micro-porous TiO2 thin films grown on surface of Ti substrate

Microporous titanium dioxide thin films have been grown on titanium plates by the micro-plasma oxidation method with different current densities (4, 6, 10 and 14 A/dm2). X-ray diffraction, scanning electronic microscopy and UV-Vis spectrophotometry were used to characterize the films. It is found that the films grown are microporous and consist of crystalline titanium dioxide. The micropore size and the content of anatase and rutile TiO2 phase increase with the applied voltage. The relatively higher degradation efficiency for rhodamine B is obtained in the film produced with a current density of 10 A/dm2.

Effect of Post Annealing on the Microstructure and Magnetic Properties of NdFeB/α-Fe/NdFeB Thin Films

A series of nanocomposite thin films, composed of Nd2Fe14B and α-Fe, has been prepared by DC-magnetron sputtering combined ion beam sputtering onto Si (100) substrates. The effects of post annealing on the microstructure and magnetic properties of [NdFeB/α-Fe/NdFeB]-type thin films have been investigated. The X-ray diffraction (XRD) study showed that annealing of the films for 30 min at temperatures 550, 600, 650, 700 ℃ resulted in the appearance of diffraction peaks, characteristic for Nd2Fe14B tetragonal structure, α-Fe and Nd2O3 phases. The investigation using the Vibrating Sample Magnetometer (VSM) with a maximum applied field of 2 T indicated that with the increase of the annealing temperature, the magnetic properties of the multilayer films were improved and reached peak value at 650 ℃ (Hci=41.72 kA·m-1, Mr/Ms=0.4, (BH)max=30.35 kJ·m-3), after which the magnetic properties were decreased greatly. Along with the increase of the thickness of α-Fe layer from Tα-Fe>16 nm, the coercivity Hci, saturation magnetization Ms, and remanence ratio Mr/Ms all declined. As the Atomic Force Microscope (AFM) indicated, after being annealed at 650 ℃ for 30 min, the sample was showed fine surface morphology with grain size 60 nm≤dα-Fe≤80 nm and 100 nm≤dNdFeB≤150 nm.

Influence of modulated structure on magnetic properties of NdFeB/Co multilayer thin films

The Nd Fe B/Co multilayer films were prepared by magnetron sputtering. After that, the samples were annealed at 600 ℃ for 20 min. The surface morphology, phase structures and magnetic properties of Mo（50 nm）/[Nd Fe B（100 nm）/Co（y）]×10/Mo（50 nm） thin films were researched by AFM, XRD and VSM, respectively. The results show that the films show stronger perpendicular magnetic anisotropy. When the thickness of Co layers is 10 nm, the coercivity Hc⊥ is the maximum, 295 k A/m. However, for y=10-20, the reduced remanence M/Ms of films has increased. When the thickness of Co layers is 20-30 nm, the Nd Fe B/Co multilayer films obtained more superior magnetic properties with M/Ms =0.95.

Temperature-dependent Gilbert damping in Co2 FeAl thin films with different B2 ordering degrees

The temperature-dependent Gilbert damping in Co2FeAl thin film grown on a Pb(Mg1/3Nb2/3)O3-30%PbTiO3 substrate is investigated by the systematic measurement of physical property measurement system(PPMS) on a series of samples with different substrate temperatures. Varying the substrate temperatures from 350℃ to 500℃, the B2 ordering degrees of Co2FeAl thin films increase, which can lead the Gilbert damping to decrease, indicated by the field-sweep in-plane PPMS measurements. In addition, the measurement result of PPMS demonstrates that the Gilbert damping decreases first with measurement temperature decreasing down to about 150 K, then increases at a measurement temperature of ~ 50 K, and decreases again with the measurement temperature decreasing. There are two independent damping manners, namely bulk damping and surface damping, which contribute to the Gilbert damping. Moreover, the observed peak of Gilbert damping at ~ 50 K can be attributed to the spin re-orientation transition at the Co2FeAl surface, which is similar to the result of the effective magnetization as a function of measurement temperature. The result presents the evidence for further studying the Gilbert damping in Co2FeAl thin film.

TiO_(2)/CuO Films Obtained by Citrate Precursor Method for Photocatalytic Application

In the present work, the hybrid catalyst films of TiO2/CuO containing up to 10% in mol of copper were deposited onto glass surface. Precursor solutions were obtained by citrate precursor method. Films were porous and the average particle size was 20 nm determined by FEG-SEM analysis. The photocatalytic activities of these films were studied using Rhodamine B as a target compound in a fixed bed reactor developed in our laboratory and UV lamp. It was observed that the addition of copper to TiO2 increased significantly its photocatalytic activity during the oxidation of Rhodamine B. The degradation exceeded 90% within 48 hours of irradiation compared to 38% when pure TiO2 was used. Moreover, there was a reduction in the particles band gap energy when compared to that of pure TiO2. These results indicate that the TiO2/CuO films are promising catalysts for the development of fixed bed reactors to be used to treat effluents containing azo dyes.

Tribological Behavior of Binary B-C Films Deposited by Sputtering-PBII Hybrid System

In this article, the authors report on the use of Radio Frequency (RF) Magnetron Sputtering combined with Plasma-Based Ion Implantation (PBII) technique to synthesize the Boron-Carbon (B-C) films. High purity of boron carbide (99.5%) disk was used as a target with an RF power of 300 W. The mixtures of Argon (Ar)-Methane (CH4) ware used as reactive gas under varying CH4 partial flow pressure at the specified range of 0 - 0.15 Pa and fixed total gas pressure and total gas flow at 0.30 Pa and 30 sccm, respectively. The effect of CH4 flow ratio on the friction coefficient of B-C films was studied. The friction coefficient of the film depended on the concentration of B. When it was 10% or lower, the coefficient decreased to 0.2 or lower. In this concentration range of B, the specific wear rate also decreased to the order of 10-7 mm3/Nm, and excellent wear resistance was displayed.

氮含量对Ti-B-C-N薄膜微观结构和性能的影响

采用反应磁控溅射法在高速钢基体上制备氮原子分数分别为10.8%,15.6%,28.1%,36.4%的Ti-B-C-N薄膜,研究了氮含量对薄膜微观结构、硬度和摩擦磨损性能的影响。结果表明:Ti-B-C-N薄膜均由α-Fe和Ti(C,N)纳米晶组成,具有Ti(C,N)纳米晶镶嵌在非晶基体相中的纳米复合结构;随着氮含量增加,非晶相含量增加,Ti(C,N)纳米晶的含量和晶粒尺寸减小;随着氮含量增加,Ti-B-C-N薄膜的显微硬度增大,摩擦因数和磨损率均减小,表面磨痕变浅,磨损机制由剥落和微观犁削转变为微观抛光。

EFFECT OF HEAT TREATMENT TEMPERATURE ON MICROSTRUCTURE AND PROPERTIES OF Ti-B-N FILM

１ＩＮＴＲＯＤＵＣＴＩＯＮＴｉＮｆｉｌｍｓｐｒｅｐａｒｅｄｂｙｍｅａｎｓｏｆｐｈｙｓｉｃａｌｖａｐｏｕｒｄｅｐｏｓｉｔｉｏｎ（ＰＶＤ）ｏｒｃｈｅｍｉｃａｌｖａｐｏｕｒｄｅｐｏｓｉｔｉｏｎ（ＣＶＤ）ａｒｅｗｉｄｅｌｙｕｓｅｄｏｎｔｏｏｌｓｆｏｒｔｈ...

Electrodeposition of SnO_2 nanocrystalline thin film using butyl-rhodamine B as a structure-directing agent

Porous SnO2 nanocrystalline thin films were successfully electrodeposited from an oxygen-saturated acid aqueous solution of SnCl2 containing different concentrations of butyl-rhodamine B（BRhB） at 70℃.BRhB with substitute of amidocyanogen can be dissolved in the acid deposition solution,where HCl was added to suppress hydrolysis of SnCl2.So it was used as a structure-directing agent to promote the crystal growth of SnO_2.The formed porous morphology and tetragonal rutile crystalline structure of the electrodeposited thin films were controlled by the addition of BRhB with different amounts.

氮流量对六方氮化硼(hBN)薄膜结构和力学性能的影响

目的研究磁控溅射过程氮气(N_(2))流量对六方氮化硼(hBN)薄膜结构和力学性能的影响,为设计新型结构hBN薄膜提供新思路。方法利用中频电源磁控溅射硼靶,调节不同N_(2)流量(6、12、18、24、30、36 mL/min),沉积4 h后得到hBN薄膜,使用表征工具分析N_(2)流量对hBN薄膜的组成、微观结构、表面形貌以及力学性能的影响。最后使用透射电子显微镜和选区电子衍射对所制备薄膜的纳米晶粒尺寸和晶体点阵结构进行分析。结果XRD结果显示,薄膜物相主要为hBN。XPS结果说明,所制备薄膜为富硼hBN薄膜。薄膜的硬度和弹性模量随N_(2)引入量的增加呈现先下降、后上升的趋势,最大硬度可达7.21 GPa,对应弹性模量为116.78 GPa。薄膜最低的硬度值为1.2 GPa,弹性模量为32.68 GPa。薄膜弹性破坏应变(H/E*)和塑性变形抗力(H3/E*2)随N_(2)引入量的增加也呈现先上升、后下降的趋势,硬度最高薄膜对应的H/E*值为6.414×10^(-2),H3/E*2值为29.27×10^(-3)GPa,最低硬度值对应的H/E*值为3.819×10^(-2),H3/E*2值为1.77×10^(-3)GPa。透射结果显示,当N_(2)引入量从6 mL/min逐渐增加到36 mL/min时,薄膜微观结构由结晶较差的卷曲结构过渡到局部纳米晶结构,最后形成结晶性较好的卷曲结构,并再次证明所制备薄膜为hBN。结论在中频磁控溅射沉积hBN薄膜时,通过调整N_(2)流量可以有效调节薄膜的特殊组成,使结构发生转变,进而影响薄膜的力学性能。

Hazy Backside Gettering with a-Si: H Film

Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glow discharge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech- lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy- len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances the gettering effectiveness. The low temperature(200～300℃) process of growing extrinsic gettering film reduces the processing contamination.

MICROSTRUCTURE OF Ti－B－NFILM AND INTERFACEFORMED BY N ION BOMBARDMENTON A Ti－B FILM

Ti-B-N film was deposited on W18Cr4 V high speed steels by using N ion bombardment on an EB-ion plating Ti-B film. It was found that Ti, B and N in the film are homogeneous, but there exists an extended diffusion zone at the film / substrate interface on the basis of the results of IPMA, EPMA and TEM. The boron content of the film is 9.5 at.%, as given by nuclear reaction analysis. The ratio of nitrogen to titanium of the film is about 0.94, as given by EPMA. The width of a high N concentration region in the Ti-B-N film fowned by N ion bombardment of a Ti-B film is about 100 nm; N and Ti penetrates into the substrate, resulting in a wide interfacial diffusion zone. The width of the diffusion zone obtained with TEM and EDAX is about 20 nm. μ-diffraction patterns of the interface show that FeTi, Fe_2 Ti, and Ti_2N existin the interfacial diffusion zone. TEM observation of film and interface show a dense and fine nano-crystalline structure of the film and a dense close interfactal bonding of the film to substrate. Electron diffraction patterns and the values of electrun binding energy by XPS show that the film consists mainly of fcc TiN, with dispersed simple orthorhombic TiB, cubic BN and simple hexagonal Ti-B-N phases. The results show that the N ion hombardment extends the film / substrate interfacial diffusion zone and stimulates chemical reaction both in the film and interface.

Fe^(3+)-TiO_2/SiO_2光催化降解罗丹明B的研究

以硅胶为载体 ,采用溶胶 -凝胶法制备了不同掺杂量的 Fe3 +-Ti O2 /Si O2 光催化剂 ,并采用 SEM,Raman和 DRS等手段对其进行了分析和表征 .以氙灯为光源 ,通过对可溶性染料罗丹明 B的降解反应 ,考察了 Fe3 +-Ti O2 /Si O2 催化剂的光催化活性 ,探讨了光催化反应中溶液 p H值和起始浓度对催化反应的影响 .

大面积B掺杂CVD金刚石膜的制备研究

研究了采用B2O3作为掺杂源以EACVD法沉积大面积掺杂VCD金刚石膜,用SEM、Raman、二次离子质谱仪、四探针电阻仪等对B掺杂金刚石膜进行了分析。结果表明直径达100mm的大面积B掺杂金刚石膜的晶粒分布均匀,非金刚石碳含量较少,生长速率达到10μm／h以上;B掺杂改变了金刚石膜的成分和结构,高浓度掺杂可以细化晶粒,在高浓度掺杂的膜中存在一定的非晶态碳;金刚石膜中B的含量在一定范围内随着掺杂源浓度的增加而正比增加;金刚石膜的电阻率随着掺杂源B2O3的浓度的增加而下降,当掺杂达到一定浓度时,金刚石膜的电阻率逐渐趋向稳定。

TiO_2薄膜的吸附能力对罗丹明B光降解过程的影响

采 用浸 涂的 方法 在玻 璃表 面制 备了 Ｔｉ Ｏ２ 薄膜． Ｘ 射线 衍射 和 Ｒａ ｍ ａｎ 光谱 结果 表明 ，薄膜全 部由锐钛 矿组成． 通 过罗丹 明 Ｂ 的 光降解 实验考察 了薄膜的 催化活 性，结果 表明，薄膜 的吸附性对罗 丹明 Ｂ 的 降解途径 有很大 的影响： 当薄膜 所吸附 的罗丹 明 Ｂ 达到 一定 量时， 脱乙 基反 应将与降解 反应同时 发生； 否则，将 观察不 到脱乙 基 作用 ． 同 时， 初步 的实 验 结果 表 明，这 种吸 附 性并不直接 影响薄 膜催化罗 丹明 Ｂ 降

溶胶-凝胶法制备TiO_2/玻璃膜和光催化降解玫瑰红B的研究

以 Ti( OC4H9) 4为原料采用溶胶 -凝胶法制备了纳米 Ti O2 /玻璃薄膜光催化剂 ,用 X射线衍射法对催化剂的物相、粒径进行了表征 .结果表明 ,薄膜中 Ti O2 为锐钛矿晶型 ,粒径 1 5～ 2 5nm.用 X射线光电子能谱法分析膜的化学组成 .摩擦学实验表明 ,Ti O2 /玻璃膜具有良好的减磨和抗磨性能 .水中染料玫瑰红 B的光催化氧化降解实验结果表明 ,Ti O2 膜对玫瑰红 B降解有很高的催化活性 ,其降解反应对时间和浓度均为一级反应 ,反应速率可用 Langmuir-Hinshelwood方程描述 .