Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics.There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

Characteristics of alternating current hopping conductivity in DNA sequences

This paper presents a model to describe alternating current （AC） conductivity of DNA sequences, in which DNA is considered as a one-dimensional （1D） disordered system, and electrons transport via hopping between localized states. It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises, and it takes the form of σac（ω） - ω2 ln^2（1/ω）. Also AC conductivity of DNA sequences increases with the increase of temperature, this phenomenon presents characteristics of weak temperature-dependence. Meanwhile, the AC conductivity in an offdiagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures, which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity, while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition, the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences. For p 〈 0.5, the conductivity of DNA sequence decreases with the increase of p, while for p ≥ 0.5, the conductivity increases with the increase of p.

Direct current hopping conductance in one-dimensional diagonal disordered systems

Based on a tight-binding disordered model describing a single electron band, we establish a direct current （de） electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at, low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm＇s law conductivity.

Dielectric relaxation and conduction mechanism in Aurivillius ceramic Bi_(5)Ti_(3)FeO_(15)

For this study,we synthesized Aurivillius Bi_(5)Ti_(3)FeO_(15) ceramic using the generic solid-state reaction route and then performed roomtemperature X-ray diffraction to confirm that the compound had a single phase with no impurities.The surface morphology of the prepared sample was observed to contain microstructural grains approximately 0.2–2μm in size.The dielectric properties of the sample were determined as a function of frequency in a range of approximately 100 Hz to 1 MHz at various temperatures(303 K≤T≤773 K).Nyquist plots of the impedance data were found to exhibit a semi-circular arc in the high-temperature region,which is explained by the equivalent electrical circuit(R_(1)C_(1))(R_(2)QC_(2)),where R_(1) and R_(2) represent the resistances associated with the grains and grain boundaries,respectively,C_(1) and C_(2) are the respective capacitances,and Q is the constant phase element(CPE),which accounts for non-Debye type of behavior.Our results indicate that both the resistance and capacitance of the grain boundaries are more prominent than those of the grains.The alternating current(ac)conductivity data were analyzed based on the Jonscher universal power law,which indicated that the conduction process is dominated by the hopping mechanism.The calculated activation energies of the relaxation and conduction processes were very similar(0.32 to 0.53 eV),from which we conclude that the same type of charge carriers are involved in both processes.

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.

Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys

On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.

Conduction Mechanism and Conductivity Behaviour of Pure Polypropylene (PP) and Polypropylene-Banana Fiber (PP-B) Composites

Fibers reinforced composite materials offer a combination of strength and modulus that are either comparable to or better than many traditional metallic materials.The research on natural fiber based composite materials fit well into this ecological image.This paper reports the conduction mechanism and ac conductivity,activation energy behavior of Polypropylene and banana fiber reinforced thermoplastic composites.Polypropylene[-CH_(2)-CH_(2)-CH_(2)-]n and different fiber content(wt.%)of polypropylene-banana fibers(natural fiber)composites were fabricated using a hot-press molding system.The optimum fabrication parameters were established(initial pressure,temp.etc.).These composite test samples were fabricated so the short fibers were randomly oriented in the matrix.The detail investigation of the a.c.conductivity and conduction mechanism of polymer composites would provide information about the relaxation processes,activation energy etc.which are dependent on frequency,temperature and time.The activation energy involved in the above processes can also be estimated from this study.The measurements were performed over a wide range of frequency of 60 Hz to 3 MHz and temperature range from 30℃(303°K)to 110℃(383°K).Experimental results of the ac properties of pure polypropylene and polypropylene-natural banana fiber composites were compared.It has been established that the fabricated composition changes its insulating property after adding the natural fibers and gives the better conductivity properties.

A critical path approach for elucidating the temperature dependence of granular hopping conduction

We revisit the classical problem of granular hopping conduction＇s σ∝exp[-（To/T）1/2] temperature dependence, where a denotes conductivity, T is temperature, and To is a sample-dependent constant. By using the hopping conduction formulation in conjunction with the incorporation of the random potential that has been shown to exist in insulator-conductor composites, it is demonstrated that the widely observed temperature dependence of granular hopping conduction emerges very naturally through the immediate-neighbor critical-path argument. Here, immediate-neighbor pairs are defined to be those where a line connecting two grains does not cross or by-pass other grains, and the critical-path argument denotes the derivation of sample conductance based on the geometric percolation condition that is marked by the critical conduction path in a random granular composite. Simulations based on the exact electrical network evaluation of finite-sample conductance show that the configuration- averaged results agree well with those obtained using the immediate-neighbor critical-path method. Furthermore, the results obtained using both these methods show good agreement with experimental data on hopping conduction in a sputtered metal-insulator composite Agx（SnO2）1-x, where x denotes the metal volume fraction. The present approach offers a relatively straightforward and simple expla- nation for the temperature behavior that has been widely observed over diverse material systems, but which has remained a puzzle in spite of the various efforts made to explain this phenomenon.

Influence of europium doping on conductivity of LiNiPO_4

Europium doped LiNiPO4 and undoped LiNiPO4 were prepared by Pechini method. Compound formation temperature was confirmed from thermogravimetry and differential thermal analysis （TG/DTA）. Powder X-ray diffraction （XRD） pattern confirmed the formation of pure LiNiPO4 compound with an orthorhombic structure. The conductivity and modulus analyses of the samples were carried out at different temperatures and frequencies using the complex impedance spectroscopy technique. The conductivity parameters such as ion hopping frequency and the charge cartier concentration term were calculated using Almond and West formalisms. An increase of one order of magnitude in the ionic conductivity has been observed for 1.0% Eu-doped LiNiPO4. （mole fraction）. The complex modulus studies suggest the presence of non-Debye type of relaxation in the materials.

Multiphonon hopping conduction in carbon-nickel composite films at different deposition time

In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates at room temperature. The electrical conductivity of the films was investigated in the temperature range of 15-500 K. The conductivity data in the temperature range of 400-500 K show the extended state conduction mecha- nism, while the multiphonon hopping （MPH） conduction is found to dominate the electrical transport in the tempera- ture range of 150-300 K. The films deposited at 180 s have the maximum conductivity. The conductivity at T 〈 60 K could be described in terms of variable range hopping （VRH） conduction. The localized state density around Fermi level （N（EF）） at low temperature for the films deposited at 180 s has the minimum value of about 4.02 × 10^21 cm^-3.eV^-1. The average hopping distance （Rhop） for the films deposited at 180 s has the maximum value of about 3.51 × 10^-7 cm.

Charge transport in conducting polyaniline co-doped with sulfosalicylic acid and dodecylbenzoyl sulfonic acid

We prepared conducting polyaniline （PAn） co-doped with sulfosalicylic acid （SSA） and dodecylbenzoyl sultonic acid （DBSA） in micro-emulsive polymerization, and studied its charge transport behaviors based on the measurement of its electrical conductivity in the temperature range between 203 K and 298 K. The conductivity was found to increase with temperature, similar to the case in semiconductors. Analyzing the experimental data with three models, namely the charge-energy-limitedtunneling model, Kivelson model and the three-dimensional variable range hopping （3D-VRH） model demonstrated that these models all describe well the charge transport behaviors of PAn co-doped with SSA and DBSA within the mentioned temperature range. From calculation with the 3D-VRH model, the hopping distance of the conducting PAn is obviously larger than its localization length. The PAn doped with SSA and DBSA enjoys desirable crystallinity due to the co-doping of two functional sulfonic acids. The macroscopic conductivity may correspond to three-dimensional transport in the network of the bundles, and the metallic islands may be attributed to quasi-one-dimensional bundles.

Features of the Conductivity of the Ag8Ge1-xMnxTe6 Solid Solutions

Samples of Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x = 0, 0.05, 0.1, 0.2) were prepared by fusing and further pressing their powders under the pressure of 0.6 GPa. In addition of Mn atoms to the Ag8GeTe6 compound leads to compression of their lattice. All p-type samples acquire a high resistance below the transition at temperatures of 180 - 220 K. The electrical conductivity of all compositions in the range of 220 - 300 K increases due to hopping mechanism, and at temperatures T > 320 K, a semiconductor characteristic is observed. By studying impedance spectra of samples, it was established that at 80 K solid solutions behave like a homogeneous dielectric material. At high temperatures and frequencies of an external electric field, a significant role of grain boundaries in conductivity was revealed. The dielectric anomaly occurring at low frequencies is also associated with an effect that manifests itself in the grain boundary.

绝缘介质中载流子注入与传导的机理

本文分析了与绝缘介质老化、失效过程密切相关的载流子注入与传导机理,包括具有电极限制特性的肖特基效应、具有体限制特性的普尔-弗兰凯尔效应、隧穿效应、离子跳跃传导以及空间电荷限制电流。研究结果表明:由普尔-弗兰凯尔效应引起的势垒降低的高度是由肖特基效应降低的势垒高度的两倍。如果In(I/E2)-1/E特性关系始终是线性的,说明载流子是由隧穿效应注入介质中的。在高电场下,离子跳跃传导的J-E特性曲线是一条斜率为eλ/2kT的直线,并可由此斜率计算得到离子跳跃的距离。由空间电荷限制电流的J-V特性可以确定临界电压,即电流从陷阱限制值迅速跳高至无陷阱的空间电荷限制电流值的电压。

扫描离子电导显微镜的研制与实现

在微纳米尺度上对活细胞高分辨率成像对生命科学研究具有重要的意义,其将有助于再现正在发生的生命过程、检测细胞对外界刺激做出的响应,甚至观测某些蛋白簇在细胞膜表面的运动。然而直到今天,仍然没有很好的实现上述目标。扫描离子电导显微镜(SICM)由于其真正的非接触、高分辨、无损独特成像方式,规避了扫描过程中探针与样品表面发生力的接触,得到越来越多的关注和广泛的应用。从系统的角度阐述自制SICM系统的设计、硬件集成及跳跃模式扫描算法的实现,并通过对聚二甲基硅氧烷(PDMS)栅格成像以及与原子力显微镜(AFM)成像结果的对比,验证了系统功能的正确性和有效性;最后开展了生理环境下活体细胞的原位扫描成像实验,初步获取了活体神经细胞轴突结构的三维形貌图像。SICM的成功搭建,将为人们深入了解生理条件下活体生物样品表面微观结构与功能机理等提供有效的研究方法与手段。

应用于高速离子电导扫描成像的双压电定位平台

为了解决离子电导显微成像系统中传统跳跃工作模式高速扫描时存在的运动过冲以及成像速度慢的问题,提出了一种基于双压电纳米定位平台的高速扫描方法。根据扫描系统需求提出了采用大行程-慢速和小行程-快速压电纳米定位平台串联的设计方案,满足探针Z向测量量程要求并可快速回提探针。以菱形位移放大机构和导向机构为构型,设计并确定双压电驱动扫描平台的关键几何参数。基于解析模型计算了定位平台的静力学性能参数并采用有限元分析方法分析了双压电平台的静/动态特性。最后,加工了双压电平台样机并进行了离子电流过冲和形貌扫描成像的测试。实验结果表明所设计的双压电驱动探针定位平台在保证成像稳定的前提下可使下探速度至少达到500 nm/ms,有效地减小了电流过冲,提高了系统成像效率。

铌酸锂单晶的表面电阻和体电阻

提出了一个可靠的方法排除热释电讯号的干扰,利用同一个样品将高绝缘铁电单晶的表面电阻和体电阻分开来测量。在70～170℃温度范围内,对不同切向的纯铌酸锂单畴和多畴单晶的表面电阻和体电阻进行了详细的测量。实验数据支持表面和体内都具有跳跃导电机构,给出了不同方向跳跃导电激活能在0.895～1.096eV之间。

La_(0.5)Ba_(0.5)CoO_3中Y的替代效应

用固相反应法制备了La0 .5-xYxBa0 .5CoO3多晶材料 ,系统研究了Y的替代对材料磁性和输运特性的影响 ,结果发现 ,Y的掺入主要产生了两种效应 ,一是Y向Co的 3d轨道产生了电荷转移 ,使分子磁矩下降 ,二是出现了Co离子的反铁磁交换作用 ,当Y含量少于或等于 0 .3时 ,材料中出现了自旋的非共线结构。当Y含量大于 0 .3时 ,材料从铁磁态为主转变为反铁磁态为主。对不同Y含量的材料 ,其导电机制都属于极化子的变程跳跃导电 ,随Y含量增加 ,材料电阻率迅速增大。

尖晶石系NTC热敏电阻材料导电机理的研究进展

通过对尖晶石系NTC热敏电阻材料导电机理的讨论和目前研究现状的综合分析,认为跳跃导电模型可以成功地解释NTC热敏电阻材料许多性质和现象,在将来的研究中要更加关注材料体系中晶界势垒的形成对材料导电机理和性能影响的研究。

Si衬底上NiCo2O4薄膜的外延生长和电学性质

改变沉积温度,在Si(100)衬底上制备了NiCo2O4外延薄膜,探究其结构和电学性质的变化.研究发现,衬底对薄膜有压应力作用,晶体结构产生压缩效果,使样品导电性增强;变程和近程跃迁在整个测试温区同时作用,低温以变程跃迁为主,高温以近程跃迁为主.

A位阳离子无序对La_(2/3)Ca_(1/3)MnO_3结构和输运性能的影响

利用固相反应法合成了(La1-xDyx)2/3Ca1/3MnO3(x=0、0.1、0.2)材料,研究阳离子无序对微结构和电输运性能的影响。Rietveld方法拟合XRD结果表明,随着Dy掺杂浓度的增加,晶胞参数和Mn-O键长键角发生了明显的变化,造成MnO6八面体畸变。电输运性能显示:样品电导率随Dy掺杂量的增加而减小,其导电机制符合半导体小极化子模型。Dy掺杂浓度的增加使得钙钛矿ABO3的A位阳离子无序度增加,影响了样品的微结构;A位无序效应增强了载流子的晶格散射,抑制了电导率。