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Time-Efficient Identification Method for Aging Critical Gates Considering Topological Connection
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作者 Tian-Song Yu Hua-Guo Liang +1 位作者 Da-Wen Xu Lu-Sheng Wang 《Journal of Electronic Science and Technology》 CAS CSCD 2015年第3期269-275,共7页
The shrinking silicon feature size causes the continuous increment of the aging effect due to the negative bias temperature instability (NBTI), which becomes a potential stopper for IC development. As the basis of c... The shrinking silicon feature size causes the continuous increment of the aging effect due to the negative bias temperature instability (NBTI), which becomes a potential stopper for IC development. As the basis of circuit-level aging protection, an efficient aging critical-gate identification method is crucially required to select a set of gates for protection to guarantee the normal lifetime of the circuits. The existing critical-gate identification methods always depend on a critical path set which contains so many paths that its generation procedure requires undesirable CPU runtime; furthermore, these methods can achieve a better solution with taking account of the topological connection. This paper proposes a time-efficient critical gates identification method with topological connection analysis, which chooses a small set of critical gates. Experiments over many circuits of ITC99 and ISCAS benchmark demonstrate that, to guarantee the normal lifetime (e.g., 10 years) of each circuit, our method achieves a 3.97x speedup and saves as much as 27.21% area overhead compared with the existing methods. 展开更多
关键词 Aging critical gates negative biastemperature instability topological connection.
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