The removal of phosphorus in metallurgical grade silicon （MG-Si） by water vapor carried with high purity argon was examined. The effect of the nozzle types, refining time, refining temperature, refining gas temperat...The removal of phosphorus in metallurgical grade silicon （MG-Si） by water vapor carried with high purity argon was examined. The effect of the nozzle types, refining time, refining temperature, refining gas temperature and refining gas flow rate on the phosphorus removed was investigated by the self-designed gas blowing device. The optimal refining conditions are nozzle type of holes at bottom and side, refining time of 3 h, refining temperature of 1793 K, refining gas temperature of 373 K, refining gas flow rate of 2 L/min. Under these optimal conditions, the phosphorus content in MG-Si is reduced from 94×10^-6 initially to 11×10-6 （mass fraction）, which indicates that gas blowing refining is very effective to remove phosphorus in MG-Si.展开更多
Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evapora...Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evaporates from molten silicon as gas species P and P2 at a finite reduced pressure. The experimental results show that phosphorus mass fraction can be decreased from 0.046% （460ppmw） to around 0.001% （10ppmw） under the condition of temperature 1 873 K, chamber pressure 0.6-0.8 Pa, holding time 1 h. Both experimental data and calculation results agree that at high phosphorus concentration, phosphorus removal is quite dependent on high chamber pressure while it becomes independent on low chamber pressure. The reason is that phosphorus evaporates from molten silicon as gas species P2 at a relatively high phosphorus concentration, while gas species P will be dominated in its vapour at low phosphorus content.展开更多
The forms of phosphorus and silicon in the natural grain sizes surface sediments of the southern Bohai Sea were studied. In sediments, the organic matter bound form of phosphorus was the main form of transferable phos...The forms of phosphorus and silicon in the natural grain sizes surface sediments of the southern Bohai Sea were studied. In sediments, the organic matter bound form of phosphorus was the main form of transferable phosphorus and ranged from 0.37 μmol/g to 1.57 μmol/g, accounting for 10.7% of the total phosphorus, others were the carbonate bound form, iron manganese oxide bound form and ion exchange able form; the transferable form of phosphorus accounted for 19.2% of the total phosphorus. Silicon’s carbonate bound form was predominant over others among its transferable forms, and content ranged from 1.55 μmol/g to 8.94 μmol/g, accounting for 0.05% of the total silicon; the total amount of transferable silicon forms accounted for only 0.12% of the total silicon. Therefore, 19.2% of the total phosphorus and 0.12% of the total silicon contained in the surface sediments of the southern Bohai Sea could participate in the biogeochemical cycling.展开更多
Based on the author’s previously obtained results on P and Si forms in southern Bohai Sea surface sediments,this study mainly foucusing on the controlling factors, existence forms, and biogeochemical processes of P a...Based on the author’s previously obtained results on P and Si forms in southern Bohai Sea surface sediments,this study mainly foucusing on the controlling factors, existence forms, and biogeochemical processes of P and Si showed that the transferable forms of phosphorus in sediments were mainly controlled by the mineralization of organic matters and the reduction of high valence iron; whereas the transferable forms of silicon were possibly controlled by the dissolution and precipitation as well as biochemical processes of living organisms.展开更多
This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc...This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.展开更多
In the media of 0.66,0.96, 2. 16 and 0.54 mol/L ofH2SO4,the heteropoly acids of As,P.Si and Ge are separately reduced to corresponding heteropoly blues by gibberellin, which exhibit maxirnum absorptions at 835, 820, 8...In the media of 0.66,0.96, 2. 16 and 0.54 mol/L ofH2SO4,the heteropoly acids of As,P.Si and Ge are separately reduced to corresponding heteropoly blues by gibberellin, which exhibit maxirnum absorptions at 835, 820, 810 and 805 nm with molar absorptivities of 2.64x104, 2.54x104 3.51x104 and 2.25x104 L.mol-1'cm-1 and linear ranges of 0-30,0-15,0-10 and 0-30 μg/25mL, The method was applied to the determinations of As, P and Si in alloyed steel.展开更多
The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively couple...The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at the defects and form precipitates heterogeneously in the high density defect region. In the case of heavy contamination, the Cu precipitate can significantly reduce the carrier lifetime of multicrystalline silicon due to their Schottkydiode behavior in the silicon substrate. A 900 °C rap thermal process （RTP） phosphorus gettering anneal cannot be sufficiently effective to remove the Cu precipitates in these two regions.展开更多
In order to explore the effects of different silicon preparations on the soil fertility of paddy fields,a pot experiment with Dongnong 427 was carried on.Different types of silicon preparations,including Si-50-G,Si-60...In order to explore the effects of different silicon preparations on the soil fertility of paddy fields,a pot experiment with Dongnong 427 was carried on.Different types of silicon preparations,including Si-50-G,Si-60-G,Si-RH,Si-50 and Si-60,were sprayed on the leaves of rice at the tillering stage,and CK was set in the control stage.The contents of alkali nitrogen,available phosphorus,available potassium and available silicon in soil were determined in the tillering stage,booting stage and maturity stage of rice.The results showed that spraying different silicon preparations at the tillering stage could promote the activation and release of soil available nutrients in different degrees.展开更多
The effect of phosphorus passivation on 4H-SiC（0001） silicon （Si） dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phospho...The effect of phosphorus passivation on 4H-SiC（0001） silicon （Si） dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phosphorus atoms at high-symmetry coordinated sites. To determine the most stable structure during the passivation process of phosphorus, a surface phase diagram of phosphorus adsorption on SiC （0001） surface is constructed over a coverage range of 1/9-1 monolayer （ML）. The calculated results indicate that the 1/3 ML configuration is most energetically favorable in a reasonable environment. At this coverage, the total electron density of states demonstrates that phosphorus may effectively reduce the interface state density near the conduction band by removing 4H-SiC （0001） Si dangling bonds. It provides an atomic level insight into how phosphorus is able to reduce the near interface traps.展开更多
基金Project(51074043)supported by the National Natural Science Foundation of ChinaProject(2011BAE03B01)supported by the National Key Technology R&D Program of China
文摘The removal of phosphorus in metallurgical grade silicon （MG-Si） by water vapor carried with high purity argon was examined. The effect of the nozzle types, refining time, refining temperature, refining gas temperature and refining gas flow rate on the phosphorus removed was investigated by the self-designed gas blowing device. The optimal refining conditions are nozzle type of holes at bottom and side, refining time of 3 h, refining temperature of 1793 K, refining gas temperature of 373 K, refining gas flow rate of 2 L/min. Under these optimal conditions, the phosphorus content in MG-Si is reduced from 94×10^-6 initially to 11×10-6 （mass fraction）, which indicates that gas blowing refining is very effective to remove phosphorus in MG-Si.
基金Project (2007J0012) supported by the Natural Science Foundation of Fujian Province, ChinaProject (2007HZ0005-2) supported by the Key Technological Program of Fujian Province, ChinaProject (BASIC-10341702) supported by Norwegian Research Council
文摘Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evaporates from molten silicon as gas species P and P2 at a finite reduced pressure. The experimental results show that phosphorus mass fraction can be decreased from 0.046% （460ppmw） to around 0.001% （10ppmw） under the condition of temperature 1 873 K, chamber pressure 0.6-0.8 Pa, holding time 1 h. Both experimental data and calculation results agree that at high phosphorus concentration, phosphorus removal is quite dependent on high chamber pressure while it becomes independent on low chamber pressure. The reason is that phosphorus evaporates from molten silicon as gas species P2 at a relatively high phosphorus concentration, while gas species P will be dominated in its vapour at low phosphorus content.
文摘The forms of phosphorus and silicon in the natural grain sizes surface sediments of the southern Bohai Sea were studied. In sediments, the organic matter bound form of phosphorus was the main form of transferable phosphorus and ranged from 0.37 μmol/g to 1.57 μmol/g, accounting for 10.7% of the total phosphorus, others were the carbonate bound form, iron manganese oxide bound form and ion exchange able form; the transferable form of phosphorus accounted for 19.2% of the total phosphorus. Silicon’s carbonate bound form was predominant over others among its transferable forms, and content ranged from 1.55 μmol/g to 8.94 μmol/g, accounting for 0.05% of the total silicon; the total amount of transferable silicon forms accounted for only 0.12% of the total silicon. Therefore, 19.2% of the total phosphorus and 0.12% of the total silicon contained in the surface sediments of the southern Bohai Sea could participate in the biogeochemical cycling.
文摘Based on the author’s previously obtained results on P and Si forms in southern Bohai Sea surface sediments,this study mainly foucusing on the controlling factors, existence forms, and biogeochemical processes of P and Si showed that the transferable forms of phosphorus in sediments were mainly controlled by the mineralization of organic matters and the reduction of high valence iron; whereas the transferable forms of silicon were possibly controlled by the dissolution and precipitation as well as biochemical processes of living organisms.
基金supported by Hi-Tech Research and Development Program of China (Grant Nos.2007AA05Z436 and 2009AA050602)Science and Technology Support Project of Tianjin of China (Grant No.08ZCKFGX03500)+3 种基金National Basic Research Program of China (Grant Nos.2006CB202602 and 2006CB202603)National Natural Science Foundation of China (Grant No.60976051)International Cooperation Project between China-Greece Government (Grant Nos.2006DFA62390 and 2009DFA62580)Program for New Century Excellent Talents in University of China (Grant No.NCET-08-0295)
文摘This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.
文摘In the media of 0.66,0.96, 2. 16 and 0.54 mol/L ofH2SO4,the heteropoly acids of As,P.Si and Ge are separately reduced to corresponding heteropoly blues by gibberellin, which exhibit maxirnum absorptions at 835, 820, 810 and 805 nm with molar absorptivities of 2.64x104, 2.54x104 3.51x104 and 2.25x104 L.mol-1'cm-1 and linear ranges of 0-30,0-15,0-10 and 0-30 μg/25mL, The method was applied to the determinations of As, P and Si in alloyed steel.
基金Projects (60906002, 50832006) supported by the National Natural Science Foundation of ChinaProject (2009QNA4007) supported by the Fundamental Research Funds for the Central Universities, China
文摘The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at the defects and form precipitates heterogeneously in the high density defect region. In the case of heavy contamination, the Cu precipitate can significantly reduce the carrier lifetime of multicrystalline silicon due to their Schottkydiode behavior in the silicon substrate. A 900 °C rap thermal process （RTP） phosphorus gettering anneal cannot be sufficiently effective to remove the Cu precipitates in these two regions.
基金Supported by the National Natural Science Foundation of China(31340032)。
文摘In order to explore the effects of different silicon preparations on the soil fertility of paddy fields,a pot experiment with Dongnong 427 was carried on.Different types of silicon preparations,including Si-50-G,Si-60-G,Si-RH,Si-50 and Si-60,were sprayed on the leaves of rice at the tillering stage,and CK was set in the control stage.The contents of alkali nitrogen,available phosphorus,available potassium and available silicon in soil were determined in the tillering stage,booting stage and maturity stage of rice.The results showed that spraying different silicon preparations at the tillering stage could promote the activation and release of soil available nutrients in different degrees.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2014AA052401)the National Natural Science Foundation of China(Grant No.61474013)the National Grid Science&Technology Project,China(Grant No.5455DW150006)
文摘The effect of phosphorus passivation on 4H-SiC（0001） silicon （Si） dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phosphorus atoms at high-symmetry coordinated sites. To determine the most stable structure during the passivation process of phosphorus, a surface phase diagram of phosphorus adsorption on SiC （0001） surface is constructed over a coverage range of 1/9-1 monolayer （ML）. The calculated results indicate that the 1/3 ML configuration is most energetically favorable in a reasonable environment. At this coverage, the total electron density of states demonstrates that phosphorus may effectively reduce the interface state density near the conduction band by removing 4H-SiC （0001） Si dangling bonds. It provides an atomic level insight into how phosphorus is able to reduce the near interface traps.
