Relationship Between Noise Figure and Equivalent Input Noise Current Spectral Density for Optical Receiver Design

Based on the equivalent circuit model of a two-port optical receiver front-end,the relationship between the equivalent input noise current spectral density and the noise figure is analyzed. The derived relationship has universal validity for determining the equivalent input noise current spectral density for optical receiver designs, as verified by measuring a 155Mb/s high-impedance optical receiver front.end. Good agreement between calculated and simulated results has been achieved.

Precision measurement and suppression of low-frequency noise in a current source with double-resonance alignment magnetometers

Low-noise high-stability current sources have essential applications such as neutron electric dipole moment measurement and high-stability magnetometers. Previous studies mainly focused on frequency noise above 0.1 Hz while less on the low-frequency noise/drift. We use double resonance alignment magnetometers(DRAMs) to measure and suppress the low-frequency noise of a homemade current source(CS) board. The CS board noise level is suppressed by about 10 times in the range of 0.001-0.1 Hz and is reduced to 100 n A/√Hz at 0.001 Hz. The relative stability of CS board can reach2.2 × 10^(-8). In addition, the DRAM shows a better resolution and accuracy than a commercial 7.5-digit multimeter when measuring our homemade CS board. Further, by combining the DRAM with a double resonance orientation magnetometer,we may realize a low-noise CS in the 0.001-1000 Hz range.

Scattering Theory of Current Noise in Nanoscale Devices with Electron-electron and Electron-phonon Interactions

In this paper, we derive a unified scattering theory model for current noise based on the equivalent contact model of the scattering region. Our model seamlessly covers the whole range of transport regimes from coherent transport to incoherent transport and it also includes the effects of Pauli exclusion and Coulomb interaction on shot noise.

Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Fihn Transistors

The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.

Shot noise in electron transport through a double quantum dot:a master equation approach

We study shot noise in tunneling current through a double quantum dot connected to two electric leads. We derive two master equations in the occupation-state basis and the eigenstate basis to describe the electron dynamics. The approach based on the occupation-state basis, despite being widely used in many previous studies, is valid only when the interdot coupling strength is much smaller than the energy difference between the two dots. In contrast, the calculations using the eigenstate basis are valid for an arbitrary interdot coupling. Using realistic model parameters, we demonstrate that the predicted currents and shot-noise properties from the two approaches are significantly different when the interdot coupling is not small. Furthermore, properties of the shot noise predicted using the eigenstate basis successfully reproduce qualitative features found in a recent experiment.

Performance enhancement of CMOS terahertz detector by drain current

In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.

Quantization of the radiation field in an anisotropic dielectric medium

There are both loss and dispersion characteristics for most dielectric media. In quantum theory the loss in medium is generally described by Langevin force in the Langevin noise （LN） scheme by which the quantization of the radiation field in various homogeneous absorbing dielectrics can be successfully actualized. However, it is invalid for the anisotropic dispersion medium. This paper extends the LN theory to an anisotropic dispersion medium and presented the quantization of the radiation field as well as the transformation relation between the homogeneous and anisotropic dispersion media.

Quantization of electromagnetic field in quadratic continuous nonlinear absorptive dielectrics

This paper reports that in the quantization of electromagnetic field in the dielectrics, the wave equation with regard to the Green function is analytically solved by a direct integral method for a quadratic continuous nonlinear absorptive dielectric medium. The quantization of the electromagnetic field in such a nonlinear absorptive dielectric is carried out for which the material dielectric function is assumed as a separable variable about the frequency and the space coordinate. The vacuum field fluctuations for different spatial continuous variations of dielectric function are numerically calculated, which shows that the present result is self-consistent.

Degradation Process of Coated Tinplate by Phase Space Reconstruction Theory

The degradation process of organosol coated tinplate in beverage was investigated by electrochemical noise (EN) technique combined with morphology characterization.EN data were analyzed using phase space reconstruction theory.With the correlation dimensions obtained from the phase space reconstruction,the chaotic behavior of EN was quantitatively evaluated.The results show that both electrochemical potential noise (EPN) and electrochemical current noise (ECN) have chaotic properties.The correlation dimensions of EPN increase with corrosion extent,while those of ECN seem nearly unchanged.The increased correlation dimensions of EPN during the degradation process are associated with the increased susceptibility to local corrosion.

Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors

Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.

Current noises in a topological Josephson junction

We study the transport properties of a superconductor-quantum spin Hall insulator-superconductor Josephson junction both in the absence and in the presence of a DC bias voltage. As the system is predicted to host Majorana fermions at its interfaces,the Andreev bond states are supposed to exhibit a distinct 4π periodicity in the superconducting phase difference, namely the fractional Josephson effect. Using the non-equilibrium Green's function method, we calculate the current and the related current noise based on a tight-binding Hamiltonian. Our direct results show that the fractional Josephson effect can not be seen in equilibrium junctions. While in non-equilibrium junctions, this effect can be confirmed by the multiple Andreev reflections induced peaks of the non-equilibrium noise, which appear at discrete frequencies ω = ne V with n being an integer number.

Measuring effects of different noises in a model using ISI-distance methods

This paper examines the effects of current and conductance noises in a minimal Hodgkin- Huxley type model of a cold receptor neuron. Current noise enters the membrane equation directly while conductance noise is propagated through the activation variables. Compared with common used interspike interval method, ISI-distance is a simple complementary approach to measure the different effects of current and conductance noises. ISI-distance extracts information from the interspike intervals by evaluating the ratio of instantaneous firing rates, which is parameter-free, time scale-independent and easy to visualize. Simulation results show that the most significant differences between different noise implementations in a pacemaker-like tonic firing regime at the transition to chaotic burst discharges.