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Sound Insulation of Floors: A New Composite with a Resilient Layer of Recycled Polymer
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作者 Aline Zini Leticia K. Zuchetto +3 位作者 Maria Femanda de O. Nunes Ana M. C. Grisa Daniel T. Pagnussat Mara Zeni 《Journal of Civil Engineering and Architecture》 2016年第8期861-869,共9页
PU (polyurethane) integral skin and PVC (polyvinyl chloride) are polymeric materials which have favorable physical characteristics to reduce the impact noise when applied to floor systems. In civil construction, f... PU (polyurethane) integral skin and PVC (polyvinyl chloride) are polymeric materials which have favorable physical characteristics to reduce the impact noise when applied to floor systems. In civil construction, floating floors systems are composed of two layers above the slab: a resilient layer and, above this, a rigid layer of cement matrix that works as a subfloor. This research aims to evaluate the incorporation of PVC and PU skin waste in the resilient layer of the floating floor, for impact noise insulation. It was conducted physical, mechanical and morphological tests in the composite, as SEM (scanning electron microscopy), determination of compressive creep, and impact noise test to evaluate the absorption capacity of the floor system over time. Furthermore, experimental results were compared with theoretical studies. These correlations may assist in understanding the behavior of impact noise damping and its relation to the size of the samples. 展开更多
关键词 Floor system impact noise insulation recycled polymer.
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Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point
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作者 张浩 宋志军 +2 位作者 冯军雅 姬忠庆 吕力 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第8期109-112,共4页
Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose... Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi2Se3 nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge's empirical relationship, while the noise level is significantly lower than that predicted by Hooge's model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator. 展开更多
关键词 of in Low-Frequency noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point for were is with EDX that from
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