A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations....A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.展开更多
快脉冲直线型变压器驱动源(fast linear transformer driver,FLTD)是建设下一代大型Z箍缩装置最有前景的技术路线之一。大型FLTD脉冲源中数以万计气体开关的可靠运行是提高Z箍缩装置可靠性的重要因素。该文基于15 MAZ箍缩科学实验装置的...快脉冲直线型变压器驱动源(fast linear transformer driver,FLTD)是建设下一代大型Z箍缩装置最有前景的技术路线之一。大型FLTD脉冲源中数以万计气体开关的可靠运行是提高Z箍缩装置可靠性的重要因素。该文基于15 MAZ箍缩科学实验装置的FLTD脉冲源设计,采用Monte-Carlo方法建立考虑支路开关自放电及其载荷共享效应的FLTD脉冲源可靠性计算模型,分析开关故障模式及其触发策略对脉冲源可靠性的影响。结果表明,主支路开关自放电产生的故障电压会引起开关级联自放电,降低装置可靠性。若主支路开关工作系数设定在0.5~0.7范围内,FLTD脉冲源故障率可低于1×10^(-4)。此外,触发器及触发支路开关的高可靠性对于提升脉冲源可靠性至关重要,增加触发器脉冲数量、降低触发器自放电故障率能够有效提升脉冲源可靠性,当触发器脉冲数量提升至4倍后,FLTD脉冲源故障率有望降低至1×10^(-5)以下。研究结果为大型FLTD脉冲源的开关工作系数及触发策略的选取提供参考,具有重要的工程应用价值。展开更多
The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air arou...The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air around the MEMS switch membrane. An analytical expression that approximately computes the displacement induced by outside shock is obtained. According to the expression, the minimum required mechanical stiffness constant of an MEMS switch beam in some maximum tolerated insertion loss condition and some external inertial shock environment or the insertion loss induced by external inertial shock can also be obtained. The influence is also illustrated with an RF MEMS capacitive switch example,which shows that outside environment factors have to be taken into account when designing RF MEMS capacitive switches working in low vacuum. While encapsulating RF MEMS switches in low vacuum diminishes the air damping and improves the switch speed and operation voltage,the performances of a switch is incident to being influenced by outside environment. This study is very useful for the optimized design of RF MEMS capacitive switches working in low vacuum.展开更多
随着社会的发展,通信系统的安全性和稳定性成为衡量各个行业领域发展的稳定性的关键因素。基于此,为进一步提升通信程控交换系统的安全性与可靠性,本研究将结合通信程控交换系统构成中所需考量的安全要点,做出针对性分析,以紧凑型控制架...随着社会的发展,通信系统的安全性和稳定性成为衡量各个行业领域发展的稳定性的关键因素。基于此,为进一步提升通信程控交换系统的安全性与可靠性,本研究将结合通信程控交换系统构成中所需考量的安全要点,做出针对性分析,以紧凑型控制架(Compact Control Shelves,CCS)型程控交换机的使用为例,针对性地提出提升其可靠性和安全性的优化建议。展开更多
基金the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045)the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814)the Natural Science Foundation of Jiangxi Province, China (Grant No. 20212BAB214047)。
文摘A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.
文摘快脉冲直线型变压器驱动源(fast linear transformer driver,FLTD)是建设下一代大型Z箍缩装置最有前景的技术路线之一。大型FLTD脉冲源中数以万计气体开关的可靠运行是提高Z箍缩装置可靠性的重要因素。该文基于15 MAZ箍缩科学实验装置的FLTD脉冲源设计,采用Monte-Carlo方法建立考虑支路开关自放电及其载荷共享效应的FLTD脉冲源可靠性计算模型,分析开关故障模式及其触发策略对脉冲源可靠性的影响。结果表明,主支路开关自放电产生的故障电压会引起开关级联自放电,降低装置可靠性。若主支路开关工作系数设定在0.5~0.7范围内,FLTD脉冲源故障率可低于1×10^(-4)。此外,触发器及触发支路开关的高可靠性对于提升脉冲源可靠性至关重要,增加触发器脉冲数量、降低触发器自放电故障率能够有效提升脉冲源可靠性,当触发器脉冲数量提升至4倍后,FLTD脉冲源故障率有望降低至1×10^(-5)以下。研究结果为大型FLTD脉冲源的开关工作系数及触发策略的选取提供参考,具有重要的工程应用价值。
文摘The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air around the MEMS switch membrane. An analytical expression that approximately computes the displacement induced by outside shock is obtained. According to the expression, the minimum required mechanical stiffness constant of an MEMS switch beam in some maximum tolerated insertion loss condition and some external inertial shock environment or the insertion loss induced by external inertial shock can also be obtained. The influence is also illustrated with an RF MEMS capacitive switch example,which shows that outside environment factors have to be taken into account when designing RF MEMS capacitive switches working in low vacuum. While encapsulating RF MEMS switches in low vacuum diminishes the air damping and improves the switch speed and operation voltage,the performances of a switch is incident to being influenced by outside environment. This study is very useful for the optimized design of RF MEMS capacitive switches working in low vacuum.
文摘随着社会的发展,通信系统的安全性和稳定性成为衡量各个行业领域发展的稳定性的关键因素。基于此,为进一步提升通信程控交换系统的安全性与可靠性,本研究将结合通信程控交换系统构成中所需考量的安全要点,做出针对性分析,以紧凑型控制架(Compact Control Shelves,CCS)型程控交换机的使用为例,针对性地提出提升其可靠性和安全性的优化建议。
