Nitrogen doped diamond-like carbon (DLC:N) films were prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectr...Nitrogen doped diamond-like carbon (DLC:N) films were prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectroscopy (AES) was used to evaluate nitrogen content, and increasing N2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy (XPS) analysis results reveal CN-sp^3C and N-sp^2C structure. With increasing the N2 flow, sp^3C decreases from 73.74% down to 42.66%, and so does N-sp^3C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young's modulus from 193.03 GPa down to 144.52 GPa.展开更多
Platinum(Pt)and nitrogen(N)were co-incorporated in diamond-like carbon(DLC)thin films using a magnetron sputtering system to form PtN-DLC thin films for tribological applications.The Pt content in the PtN-DLC films pr...Platinum(Pt)and nitrogen(N)were co-incorporated in diamond-like carbon(DLC)thin films using a magnetron sputtering system to form PtN-DLC thin films for tribological applications.The Pt content in the PtN-DLC films prepared on Si substrates was controlled by varying RF power applied to a Pt target at a fixed N2 flow rate.The tribological properties of the PtN-DLC films were investigated with respect to the Pt content in the films.The uncoated Si substrate surface tested against a steel ball of 6 mm in diameter had significant abrasive and fatigue wear,while no significant wear was found on the N-DLC coated sample surface,indicating that the N-DLC film effectively prevented its underlying Si substrate from wear.However,the incorporation of Pt in the N-DLC films reduced the wear resistance of the films by degrading sp3-bonded cross-linking structures of the films so that significant wear tracks were found on the surfaces of the PtN-DLC films.Therefore,the increased radio frequency(RF)power applied to the Pt target decreased the wear resistance of the PtN-DLC films as a result of the increased Pt content.展开更多
Composite SiNx/DLC films were deposited on Si substrate by RF magnetron sputtering of silicon nitride (Si3N4) target simultaneously with filtered cathode arc (FCA) of graphite. The RF power was fixed at 100 W whereas ...Composite SiNx/DLC films were deposited on Si substrate by RF magnetron sputtering of silicon nitride (Si3N4) target simultaneously with filtered cathode arc (FCA) of graphite. The RF power was fixed at 100 W whereas the arc currents of FCA were 20, 40, 60 and 80 A. The effects of arc current on the structure, surface roughness, density and mechanical properties of SiNx/DLC films were investigated. The results show that the arc current in the studied range has effect on the structure, surface roughness, density and mechanical properties of composite SiNx/DLC films. The composite SiNx/DLC films show the sp3 content between 53.5% and 66.7%, density between 2.54 and2.98 g/cm3, stress between 1.7 and 2.2 GPa, and hardness between 35 and 51 GPa. Furthermore, it was found that the density, stress and hardness correlate linearly with the sp3 content for composite SiNx/DLC films.展开更多
Silicon-doped diamond-like carbon (Si-DLC) films possess the potential to improve wear performance of DLC films in humid atmospheres and at higher temperatures. But many experimental results of Si-DLC films show tha...Silicon-doped diamond-like carbon (Si-DLC) films possess the potential to improve wear performance of DLC films in humid atmospheres and at higher temperatures. But many experimental results of Si-DLC films show that their structure and mechanical properties have changed greatly with the increasing silicon content. Therefore, molecular dynamics (MD) simulations were used to generate hydrogen-free Si-DLC films and study their nano-indentation process under the interaction of a diamond indenter. The results show that sp3/sp2(C) (only carbon atoms) always decreases with the increasing silicon content. But sp3/sp2(C+Si) ratio increases firstly and reaches a maximum at the silicon content of 0.2, and then decreases with the further increase of the silicon content. Bulk modulus and hardness of the Si-DLC films both decrease with the increasing of the silicon content, which has the same trend with Papakonstantinou and Ikeyama's results. It is concluded that the hardness of the Si-DLC films is dependent on sp3/sp2(C), not sp3/sp2(C+Si).展开更多
文摘Nitrogen doped diamond-like carbon (DLC:N) films were prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectroscopy (AES) was used to evaluate nitrogen content, and increasing N2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy (XPS) analysis results reveal CN-sp^3C and N-sp^2C structure. With increasing the N2 flow, sp^3C decreases from 73.74% down to 42.66%, and so does N-sp^3C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young's modulus from 193.03 GPa down to 144.52 GPa.
文摘Platinum(Pt)and nitrogen(N)were co-incorporated in diamond-like carbon(DLC)thin films using a magnetron sputtering system to form PtN-DLC thin films for tribological applications.The Pt content in the PtN-DLC films prepared on Si substrates was controlled by varying RF power applied to a Pt target at a fixed N2 flow rate.The tribological properties of the PtN-DLC films were investigated with respect to the Pt content in the films.The uncoated Si substrate surface tested against a steel ball of 6 mm in diameter had significant abrasive and fatigue wear,while no significant wear was found on the N-DLC coated sample surface,indicating that the N-DLC film effectively prevented its underlying Si substrate from wear.However,the incorporation of Pt in the N-DLC films reduced the wear resistance of the films by degrading sp3-bonded cross-linking structures of the films so that significant wear tracks were found on the surfaces of the PtN-DLC films.Therefore,the increased radio frequency(RF)power applied to the Pt target decreased the wear resistance of the PtN-DLC films as a result of the increased Pt content.
文摘Composite SiNx/DLC films were deposited on Si substrate by RF magnetron sputtering of silicon nitride (Si3N4) target simultaneously with filtered cathode arc (FCA) of graphite. The RF power was fixed at 100 W whereas the arc currents of FCA were 20, 40, 60 and 80 A. The effects of arc current on the structure, surface roughness, density and mechanical properties of SiNx/DLC films were investigated. The results show that the arc current in the studied range has effect on the structure, surface roughness, density and mechanical properties of composite SiNx/DLC films. The composite SiNx/DLC films show the sp3 content between 53.5% and 66.7%, density between 2.54 and2.98 g/cm3, stress between 1.7 and 2.2 GPa, and hardness between 35 and 51 GPa. Furthermore, it was found that the density, stress and hardness correlate linearly with the sp3 content for composite SiNx/DLC films.
基金Funded by the National Natural Science Foundation of China(No.50805007)the Fundamental Research Funds for the Central Universities, China (No.2013JBM074)
文摘Silicon-doped diamond-like carbon (Si-DLC) films possess the potential to improve wear performance of DLC films in humid atmospheres and at higher temperatures. But many experimental results of Si-DLC films show that their structure and mechanical properties have changed greatly with the increasing silicon content. Therefore, molecular dynamics (MD) simulations were used to generate hydrogen-free Si-DLC films and study their nano-indentation process under the interaction of a diamond indenter. The results show that sp3/sp2(C) (only carbon atoms) always decreases with the increasing silicon content. But sp3/sp2(C+Si) ratio increases firstly and reaches a maximum at the silicon content of 0.2, and then decreases with the further increase of the silicon content. Bulk modulus and hardness of the Si-DLC films both decrease with the increasing of the silicon content, which has the same trend with Papakonstantinou and Ikeyama's results. It is concluded that the hardness of the Si-DLC films is dependent on sp3/sp2(C), not sp3/sp2(C+Si).