This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, di...This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.展开更多
基金supported by the National Science Foundation for Young Scholars of China(No.11105092)the Shenzhen Science and Technology Development Funds(Nos.JC201005280565A,JC201005280558A,GJHS20120621142118853)
文摘This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.
