An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented...An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.展开更多
Enhancing ion conductance and controlling transport pathway in organic electrolyte could be used to modulate ionic kinetics to handle signals. In a Pt/Poly(3-hexylthiophene-2,5-diyl)/Polyethylene?Li CF3SO3/Pt hetero-j...Enhancing ion conductance and controlling transport pathway in organic electrolyte could be used to modulate ionic kinetics to handle signals. In a Pt/Poly(3-hexylthiophene-2,5-diyl)/Polyethylene?Li CF3SO3/Pt hetero-junction, the electrolyte layer handled at high temperature showed nano-fiber microstructures accompanied with greatly improved salt solubility. Ions with high mobility were confined in the nano-fibrous channels leading to the semiconducting polymer layer,which is favorable for modulating dynamic doping at the semiconducting polymer/electrolyte interface by pulse frequency.Such a device realized synaptic-like frequency selectivity, i.e., depression at low frequency stimulation but potentiation at high-frequency stimulation.展开更多
Optical channel pre-emphasis equalization is experimentally researched for a 270 km 40 × 40 Gbit/s wavelength division multiplexing （WDM） transmission system with three Erbium-doped fiber amplifiers （ED- FAs）...Optical channel pre-emphasis equalization is experimentally researched for a 270 km 40 × 40 Gbit/s wavelength division multiplexing （WDM） transmission system with three Erbium-doped fiber amplifiers （ED- FAs） and Raman amplifiers concatenated as booster amplifier. The channel imbalance of the overall system changes with different sets of power launched into EDFAs. By appropriately choosing the power input to concatenated EDFAs, the output spectrum of 40 channel signal can be equalized to the most extent. The merit of benefit can be around 5.5 dB by this pre-emphasis equalization. The requirement for the gain equalizer is therefore greatly released. Then the gain imbalance of the overall system and the power imbalance of 40 channels are compared and the two almost matches, but the significant difference lies on some channels. Finally, the pump power into Raman amplifier is also optimized, and another 1.3 dB improvement of channel equaliza- tion can be further achieved.展开更多
用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。讨论了 In Ga As/Ga As宜质结杨效应晶体管 ( HFET)的优越性。和 Ga As MESFETS或 HEMT相比 ,由于 HFET没有 Al组份 ,具有低温特性好 ...用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。讨论了 In Ga As/Ga As宜质结杨效应晶体管 ( HFET)的优越性。和 Ga As MESFETS或 HEMT相比 ,由于 HFET没有 Al组份 ,具有低温特性好 ,低噪声和高增益等特点。本文研究了具有 In Ga As/Ga As双沟道和独特掺杂分布的低噪声高增益 HFET。展开更多
短沟效应是MOS器件特征尺寸缩小面对的关键挑战之一。Halo结构能够有效抑制短沟效应,合理的Halo区掺杂分布可以改善小尺寸器件性能。在对Halo注入条件进行优化的过程中,不仅考虑了Halo注入倾角和注入能量对器件常温特性和高低温特性的影...短沟效应是MOS器件特征尺寸缩小面对的关键挑战之一。Halo结构能够有效抑制短沟效应,合理的Halo区掺杂分布可以改善小尺寸器件性能。在对Halo注入条件进行优化的过程中,不仅考虑了Halo注入倾角和注入能量对器件常温特性和高低温特性的影响,还考虑到工艺波动,比较了多晶条宽变化对器件参数的影响。为了增加不同条件的可比性,以室温下的饱和电流作为基准,通过调节注入剂量,使不同Halo注入条件在室温下的饱和电流都相等。结果表明,对于130 nm多晶栅长,注入倾角60°,注入能量100 Ke V时器件特性有最好的温度稳定性和工艺容宽。展开更多
文摘An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.
基金supported by National Natural Science foundation of China (Grant Nos. 51371103 and 51231004)National Basic Research Program of China (Grant No. 2010CB832905)+1 种基金National Hi-tech (R&D) Project of China (Grant Nos. 2012AA03A706, 2013AA030801)the Research Project of Chinese Ministry of Education (No. 113007A)
文摘Enhancing ion conductance and controlling transport pathway in organic electrolyte could be used to modulate ionic kinetics to handle signals. In a Pt/Poly(3-hexylthiophene-2,5-diyl)/Polyethylene?Li CF3SO3/Pt hetero-junction, the electrolyte layer handled at high temperature showed nano-fiber microstructures accompanied with greatly improved salt solubility. Ions with high mobility were confined in the nano-fibrous channels leading to the semiconducting polymer layer,which is favorable for modulating dynamic doping at the semiconducting polymer/electrolyte interface by pulse frequency.Such a device realized synaptic-like frequency selectivity, i.e., depression at low frequency stimulation but potentiation at high-frequency stimulation.
基金the National Natural Science Foundation of China (60777024)
文摘Optical channel pre-emphasis equalization is experimentally researched for a 270 km 40 × 40 Gbit/s wavelength division multiplexing （WDM） transmission system with three Erbium-doped fiber amplifiers （ED- FAs） and Raman amplifiers concatenated as booster amplifier. The channel imbalance of the overall system changes with different sets of power launched into EDFAs. By appropriately choosing the power input to concatenated EDFAs, the output spectrum of 40 channel signal can be equalized to the most extent. The merit of benefit can be around 5.5 dB by this pre-emphasis equalization. The requirement for the gain equalizer is therefore greatly released. Then the gain imbalance of the overall system and the power imbalance of 40 channels are compared and the two almost matches, but the significant difference lies on some channels. Finally, the pump power into Raman amplifier is also optimized, and another 1.3 dB improvement of channel equaliza- tion can be further achieved.
文摘用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。讨论了 In Ga As/Ga As宜质结杨效应晶体管 ( HFET)的优越性。和 Ga As MESFETS或 HEMT相比 ,由于 HFET没有 Al组份 ,具有低温特性好 ,低噪声和高增益等特点。本文研究了具有 In Ga As/Ga As双沟道和独特掺杂分布的低噪声高增益 HFET。
文摘短沟效应是MOS器件特征尺寸缩小面对的关键挑战之一。Halo结构能够有效抑制短沟效应,合理的Halo区掺杂分布可以改善小尺寸器件性能。在对Halo注入条件进行优化的过程中,不仅考虑了Halo注入倾角和注入能量对器件常温特性和高低温特性的影响,还考虑到工艺波动,比较了多晶条宽变化对器件参数的影响。为了增加不同条件的可比性,以室温下的饱和电流作为基准,通过调节注入剂量,使不同Halo注入条件在室温下的饱和电流都相等。结果表明,对于130 nm多晶栅长,注入倾角60°,注入能量100 Ke V时器件特性有最好的温度稳定性和工艺容宽。
