Based on the kinetic theoretical Vlasov-Poisson equation, a surface Coulomb explosion model of SiO2 material induced by ultra-short pulsed laser radiation is established. The non-equilibrium free electron distribution...Based on the kinetic theoretical Vlasov-Poisson equation, a surface Coulomb explosion model of SiO2 material induced by ultra-short pulsed laser radiation is established. The non-equilibrium free electron distribution resulting from the two mechanisms of multi-photon ionization and avalanche ionization is computed. A quantitative analysis is given to describe the Coulomb explosion induced by the self-consistent electric field, and the impact of the parameters of laser pulses on the surface ablation is also discussed. The results show that the electron relaxation time is not constant, but it is related to the microscopic state of the electrons, so the relaxation time approximation is not available on the femtosecond time scale. The ablation depths computed by the theoretical model are in good agreement with the experimental results in the range of pulse durations from 0 to 1 ps.展开更多
The mechanism of the femtosecond laser ablation of semiconductors is investigated. The collision pro cess of free electrons in a conduction band is depicted by the test particle method, and a theoretical model of none...The mechanism of the femtosecond laser ablation of semiconductors is investigated. The collision pro cess of free electrons in a conduction band is depicted by the test particle method, and a theoretical model of nonequilibrium electron transport on the femtosecond timescale is proposed based on the FokkerPlanck equa tion. This model considers the impact of inverse bremsstrahlung on the laser absorption coefficient, and gives the expressions of electron drift and diffusion coefficients in the presence of screened Coulomb potential. Numerical simulations are conducted to obtain the nonequilibrium distribution function of the electrons. The femtosecond laser ablation thresholds are then calculated accordingly, and the results are in good agreement with the experimental results. This is followed by a discussion on the impact of laser parameters on the ablation of semiconductors.展开更多
文摘Based on the kinetic theoretical Vlasov-Poisson equation, a surface Coulomb explosion model of SiO2 material induced by ultra-short pulsed laser radiation is established. The non-equilibrium free electron distribution resulting from the two mechanisms of multi-photon ionization and avalanche ionization is computed. A quantitative analysis is given to describe the Coulomb explosion induced by the self-consistent electric field, and the impact of the parameters of laser pulses on the surface ablation is also discussed. The results show that the electron relaxation time is not constant, but it is related to the microscopic state of the electrons, so the relaxation time approximation is not available on the femtosecond time scale. The ablation depths computed by the theoretical model are in good agreement with the experimental results in the range of pulse durations from 0 to 1 ps.
文摘The mechanism of the femtosecond laser ablation of semiconductors is investigated. The collision pro cess of free electrons in a conduction band is depicted by the test particle method, and a theoretical model of nonequilibrium electron transport on the femtosecond timescale is proposed based on the FokkerPlanck equa tion. This model considers the impact of inverse bremsstrahlung on the laser absorption coefficient, and gives the expressions of electron drift and diffusion coefficients in the presence of screened Coulomb potential. Numerical simulations are conducted to obtain the nonequilibrium distribution function of the electrons. The femtosecond laser ablation thresholds are then calculated accordingly, and the results are in good agreement with the experimental results. This is followed by a discussion on the impact of laser parameters on the ablation of semiconductors.
