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Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism
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作者 Fedor I.Manyakhin Dmitry O.Varlamov +3 位作者 Vladimir P.Krylov Lyudmila O.Morketsova Arkady A.Skvortsov Vladimir K.Nikolaev 《Journal of Semiconductors》 EI CAS CSCD 2024年第8期25-33,共9页
Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS reco... Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4. 展开更多
关键词 light-emitting diodes with quantum wells voltage−current relation nonideality factor recombination mechanism Sah−Noyce−Shockley model
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